Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Author: search.filters.author.Özen, SercanWoS Q: search.filters.wosQuartile.Q3

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  • Article
    Citation - WoS: 3
    Citation - Scopus: 4
    Experimental and First-Principles Investigation of Cr-Driven Color Change in Cesium Lead Halide Perovskites
    (American Institute of Physics, 2019) Özen, Sercan; Güner, Tuğrul; Topçu, Gökhan; Özcan, Mehmet; Demir, Mustafa Muammer; Şahin, Hasan
    Herein, we report room temperature Cr-doping for all-inorganic perovskites that have attracted great attention in recent years due to their extraordinary optical properties, low cost, and ease of synthesis. Incorporation of Cr 3 + ions into the perovskite crystal lattices is achieved by following a facile route involving an antisolvent recrystallization method at room temperature. It is shown that both Cr-doping and formation of crystals in the CsPbBr x Cl 3 - x phase are provided by increasing the concentration of the CrCl 3 solution. It is also observed that the doping procedure leads to the emergence of three types of distinctive peaks in the PL spectrum originating from CsPbBr x Cl 3 - x domains (476-427nm), Cr-strained host lattices (515nm), and midgap states formed by Cr dopants (675-775nm). It is also found that the Cr-doped perovskites emitting a dark violaceous color change their color to white with a high color rendering index (88) in 30-day time intervals. Easy-tunable optical properties of all-inorganic Cs perovskites indicate their great potential for future optoelectronic device applications.
  • Article
    Citation - WoS: 72
    Citation - Scopus: 77
    Gd3+-Doped Alpha-Cspbi3 Nanocrystals With Better Phase Stability and Optical Properties
    (American Chemical Society, 2019) Güvenç, Çetin Meriç; Yalçınkaya, Yenal; Özen, Sercan; Şahin, Hasan; Demir, Mustafa Muammer
    Black alpha-CsPbI3 perovskites are unable to maintain their phase stability under room conditions; hence, the alpha-CsPbI3 phase transforms into a thermodynamically stable yellow delta-CsPbI3 phase within a few days, which has a nonperovskite structure and high band gap for optoelectronic applications. This phase transformation should be prevented or at least retarded to make use of superior properties of alpha-CsPbI3 in optoelectronic applications. In this study, Gd3+ doping was employed with the aim of increasing the stability of alpha-CsPbI3. All doped alpha-CsPbI3 nanocrystals with various levels of Gd3+, between 5 and 15 mol %, have shown greater phase stability than that of the pure alpha-CsPbI3 phase from 5 days up to 11 days under ambient conditions. This prolonged phase stability can be attributed to three potential reasons: increased tolerance factor of the perovskite structure, distorted cubic symmetry, and decreased defect density in nanocrystals. Urbach energy values suggest the reduction of defect density in the doped nanocrystals. Also, use of 10 mol % Gd3+ as a dopant material increases the photoluminescence quantum yield from 70 to 80% and fluorescence lifetime of alpha-CsPbI3 from 47.4 to 64.4 ns. Further, density functional theory calculations are in a good agreement with the experimental results.
  • Article
    Citation - WoS: 15
    Citation - Scopus: 15
    Vertical van der waals heterostructure of single layer InSe and SiGe
    (American Chemical Society, 2019) Eren, İsmail; Özen, Sercan; Sözen, Yiğit; Yağmurcukardeş, Mehmet; Şahin, Hasan
    We present a first-principles investigation on the stability, electronic structure, and mechanical response of ultrathin heterostructures composed of single layers of InSe and SiGe. First, by performing total energy optimization and phonon calculations, we show that single layers of InSe and SiGe can form dynamically stable heterostructures in 12 different stacking types. Valence and conduction band edges of the heterobilayers form a type-I heterojunction having a tiny band gap ranging between 0.09 and 0.48 eV. Calculations on elastic-stiffness tensor reveal that two mechanically soft single layers form a heterostructure which is stiffer than the constituent layers because of relatively strong interlayer interaction. Moreover, phonon analysis shows that the bilayer heterostructure has highly Raman active modes at 205.3 and 43.7 cm(-1), stemming from the out-of-plane interlayer mode and layer breathing mode, respectively. Our results show that, as a stable type-I heterojunction, ultrathin heterobilayer of InSe/SiGe holds promise for nanoscale device applications.