Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 8Citation - Scopus: 9Polymeric Thermal Analysis of C+h and C+h+ar Ion Implanted Uhmwpe Samples(Elsevier Ltd., 2007) Kaya, N.; Öztarhan, Ahmet M.; Urkaç, Emel Sokullu; Ila, D.; Budak, S.; Oks, E.; Tıhmınlıoğlu, Funda; Muntele, C.Chemical surface characterization of C + H hybrid ion implanted UHMWPE samples were carried out using DSC (differential scanning calorimeter) and TGA (thermal gravimetric analysis) techniques. Samples were implanted with a fluence of 10(17) ion/cm(2) and an extraction voltage of 30 kV. The study of TGA and DSC curves showed that: (1) Polymeric decomposition temperature increased, (2) T-m, Delta C-p and Delta H-m values changed while Delta C-p and Delta H-m increased. T-g value could not be measured, because of some experimental limitations. However, the increase in Delta H-m values showed that T-g values increased, (3) the branch density which indicated the increase in number of cross-link (M-c) decreased in ion implanted samples and (4) increase in Delta H-m values indicated increase in crystallinity of implanted surface of UHMWPE samples.Conference Object Structural and Thermal Characterization of Ti+o Ion Implanted Ultrahigh Molecular Weight Polyethylene (uhmwpe)(American Institute of Physics, 2009) Öztarhan, Ahmet; Urkaç Sokullu, Şadiye Emel; Tıhmınlıoğlu, Funda; Kaya, N.; Ila, Daryush; Budak, S.; Nikolaev, A.In this work, Metal-Gas Hybrid Ion Implantation technique was used as a tool for the surface modification of Ultra High Molecular Weight Polyethylene (UHMWPE). Samples were Ti + O ion implanted by using Metal-Vapour Vacuum Arc (MEVVA) ion implanter to a fluence of 5x10(16) ion/cm(2) for each species and extraction voltage of 30 kV. Untreated and surface treated samples were investigated by Rutherford Back Scattering (RBS) Spectrometry, Attenuated Total Reflectance - Fourier Transform Infrared (ATR-FTIR) Spectroscopy, Thermo Gravimetric Analysis (TGA) and Differential Scanning Calorimetry (DSC). Results indicate that Ti + O ion implantation can be applied on UHMWPE surfaces successfully. ATR-FTIR spectra indicate that the C-H concentration on the surface decreased after Ti + O implantation. Thermal characterization with TGA and DSC shows that polymeric decomposition temperature is shifted after ion implantation.Article Citation - WoS: 21Citation - Scopus: 22Structural and Electrical Characterization of the Nickel Silicide Films Formed at 850 °c by Rapid Thermal Annealing of the Ni/Si(1 0 0) Films(Elsevier Ltd., 2010) Utlu, G.; Artunç, N.; Budak, S.; Tarı, SüleymanNickel di-silicide formation induced by RTA process at 850 °C for 60 s in the Ni/Si(1 0 0) systems are investigated as a function of the initial Ni film thickness of 7-89 nm using XRD, RBS, SEM, X-SEM and AFM. Based on the XRD and RBS data, in the silicide films of 400-105 nm, NiSi and NiSi2 silicide phases co-exist, indicating that Ni overlayer is completely transformed to NiSi and NiSi2 silicide phases. SEM reveals that these films consist of large grains for co-existence of NiSi2 and NiSi phases, separated from one another by holes, reflecting that NiSi2 grows as islands in NiSi matrix. These films have low sheet resistance, ranging from 1.89 to 5.44 Ω/□ and good thermal stability. For thicknesses ≤ 80 nm RBS yields more Si-rich silicide phases compared to thicker films, whereas SEM reveals that Si-enriched silicide islands with visible holes grow in Si matrix. As the film thickness decreases from 400 to 35 nm, AFM reveals a ridge-like structure showing a general trend of decreasing average diameter and mean roughness values, while sheet resistance measurements exhibit a dramatic increase ranging from 1.89 to 53.73 Ω/□. This dramatic sheet resistance increase is generated by substantial grain boundary grooving, followed by island formation, resulting in a significant phase transformation from NiSi2-rich to Si-rich silicide phases. © 2010 Elsevier B.V. All rights reserved.