Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Conference Object Fabrication of Double Mesa Structures by E-Beam Lithography From High Temperature Superconducting Bi2sr2cacu2o 8+? (bi2212) for Powerful Terahertz Emission(Institute of Electrical and Electronics Engineers Inc., 2011) Demirhan, Yasemin; Türkoğlu, Fulya; Özyüzer, Lütfi; Minematsu, M.; Araki, H.; Demirhan, Yasemin; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyWe work on a frequency tunable solid state device to meet the needs of continuous, coherent, powerful terahertz emission sources that fill practically important terahertz gap. High temperature superconducting (HTS) coherently oscillating Josephson junctions in Bi2Sr2CaCu 2O8+δ (Bi2212) crystal make this approach very promising. Since doping dependence of Bi2212 is an important parameter, Bi2212 crystals are annealed in vacuum or purified argon gas flow at 425°C. For further processing we pattern both single and double rectangular mesa structures by using electron beam lithography on the cleaved surface of the crystal. Resistance-temperature (R-T), and current-voltage behavior (I-V) measurements achieved. © 2011 IEEE.Conference Object Citation - WoS: 4Citation - Scopus: 4Probing the Phase Diagram of Bi2sr2cacu 2o8+? With Tunneling Spectroscopy(Institute of Electrical and Electronics Engineers Inc., 2003) Özyüzer, Lütfi; Özyüzer, Lütfi; Gray, Kenneth E.; Hinks, David G.; Miyakawa, Nobuaki; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyTunneling measurements are performed on Ca-rich single crystals of Bi 2Sr2CaCu2O8+δ (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined quasiparticle peaks, robust dip and hump features and in some cases Josephson currents. The doping dependence of tunneling conductances of Ca-rich Bi2212 are analyzed and compared to stoichiometric Bi2212. A similar profile of energy gap vs. doping concentration is found although the Ca-rich samples have a slighly smaller optimum Tc and therefore smaller gap values for any doping level. The evolution of tunneling conductance peak height to background ratios with hole concentration are compared. For a given doping level, the Ca-rich spectra showed more broadened features compared to the stoichiometric counterparts, most likely due to increased disorder from the excess Ca. Comparison of the dip and hump features has provided some potential insights into their origins.Article Citation - WoS: 4Citation - Scopus: 4Simultaneous Quasiparticle and Josephson Tunneling in Bscco-2212 Break Junctions(Institute of Electrical and Electronics Engineers Inc., 1999) Özyüzer, Lütfi; Özyüzer, Lütfi; Miyakawa, Nobuaki; Zasadzinski, John F.; Yusof, Zikri M.; Romano, Pierom; Kendziora, Christopher A.; Hinks, David G.; Gray, Kenneth E.; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyTunneling measurements are reported for superconductor-insulator-superconductor (SIS) break junctions on underdoped, optimally-doped, and overdoped single crystals of tSrsCaCiOs-).,! (Bi2212). The junction I -V characteristics exhibit welldefined quasiparticle current jumps at eV = 2A as well as hysteretic Josephson currents. The quasiparticle branch has been analyzed in the framework of dxa_y2 (d-wave) superconductivity and indicates that there is preferential tunneling along the lobe directions of the d-wave gap. For overdoped Bi-2212 with TC-62 K, the Josephson current is measured as a function of junction resistance, Rn, which varied by two orders of magnitude (1 kO to 100 kO). IcRn product is proportional to the 0.47 power of /c and displays a maximum of 7.0 mV. When the hole doping is decreased from overdoped (Tc=62 K) to the underdoped regime (Tc=70 K), the average IcRn product increases as does the quasiparticle gap. The maximum IcRn is ~ 40% of the A/e at each doping level, with a value as high as 25 mV in underdoped Bi-2212.