Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Author: search.filters.author.Senger, Ramazan TuğrulPublisher: search.filters.publisher.John Wiley and Sons Inc.

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  • Article
    Citation - WoS: 15
    Citation - Scopus: 18
    Computing Optical Properties of Ultra-Thin Crystals
    (John Wiley and Sons Inc., 2016) Şahin, Hasan; Torun, Engin; Şahin, Hasan; Horzum, Şeyda; Senger, Ramazan Tuğrul; Horzum, Şeyda; Peeters, François M.; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    An overview is given of recent advances in experimental and theoretical understanding of optical properties of ultra-thin crystal structures (graphene, phosphorene, silicene, MoS2 , MoSe2 , WS2 , WSe2 , h-AlN, h-BN, fluorographene, and graphane). Ultra-thin crystals are atomically thick-layered crystals that have unique properties which differ from their 3D counterpart. Because of the difficulties in the synthesis of few-atom-thick crystal structures, which are thought to be the main building blocks of future nanotechnology, reliable theoretical predictions of their electronic, vibrational, and optical properties are of great importance. Recent studies revealed the reliable predictive power of existing theoretical approaches based on density functional theory.
  • Article
    Citation - WoS: 14
    Citation - Scopus: 14
    Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3
    (John Wiley and Sons Inc., 2016) İyikanat, Fadıl; Senger, Ramazan Tuğrul; Senger, Ramazan Tuğrul; Şahin, Hasan; Şahin, Hasan; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.