Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 6Citation - Scopus: 5Structural and Optical Characteristics of Antimony Selenosulfide Thin Films Prepared by Two-Step Method(Springer, 2022) Türkoğlu, Fulya; Ekren, Memduh Emirhan; Cantaş, Ayten; Yakıncı, Kübra; Gündoğan, Hazal; Aygün, Gülnur; Özyüzer, LütfiAntimony triselenide (Sb2Se3) is one of the most promising absorber material choices among the inorganic semiconductors that has attracted much attention today. However, highest recorded efficiencies for Sb2Se3 solar cells are still lower than ideal. Exploring antimony selenosulfide (Sb-2(SxSe1-x)(3)) to increase device performance is one option because some features of alloyed Sb-2(SxSe1-x)(3) depend on composition such as bandgap and band position. In this study, two-step process was used to grow Sb-2(SxSe1-x)(3) thin films. In the first stage, Sb2Se3 thin films were deposited on soda lime glass substrates using direct current magnetron sputtering technique. In the second stage, Sb2Se3 thin films were exposed to sulfurization process in a quartz ampoule to obtain Sb-2(SxSe1-x)(3) thin films. Characterization results showed that morphological, optical, and structural properties of Sb-2(SxSe1-x)(3) thin films grown by presented method were highly dependent on amount of sulfur in the films. By the adjustment of the S/S + Se atomic ratio, Sb-2(SxSe1-x)(3) absorber materials with suitable bandgap, favorable orientation and compact morphology can be obtained for photovoltaic applications.Article Citation - WoS: 21Citation - Scopus: 24Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices(Elsevier Ltd., 2019) Türkoğlu, Fulya; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, GülnurCopper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.Article Citation - WoS: 15Citation - Scopus: 17Effect of Substrate Rotation Speed and Off-Center Deposition on the Structural, Optical, and Electrical Properties of Azo Thin Films Fabricated by Dc Magnetron Sputtering(American Institute of Physics, 2018) Türkoğlu, Fulya; Aygün, Gülnur; Köseoğlu, Hasan; Özdemir, Mehtap; Zeybek, S.; Özyüzer, Lütfi; Özdemir, Mehtap; Özyüzer, Gülnur Aygün; Özyüzer, LütfiIn this study, aluminum-doped zinc oxide (AZO) thin films were deposited by DC magnetron sputtering at room temperature. The distance between the substrate and target axis, and substrate rotation speed were varied to get high quality AZO thin films. The influences of these deposition parameters on the structural, optical, and electrical properties of the fabricated films were investigated by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometry, and four-point probe techniques. The overall analysis revealed that both sample position and substrate rotation speed are effective in changing the optical, structural, and electrical properties of the AZO thin films. We further observed that stress in the films can be significantly reduced by off-center deposition and rotating the sample holder during the deposition. An average transmittance above 85% in the visible range and a resistivity of 2.02 × 10-3Ω cm were obtained for the AZO films.Article Citation - WoS: 24Citation - Scopus: 26The Fabrication of Thz Emitting Mesas by Reactive Ion-Beam Etching of Superconducting Bi2212 With Multilayer Masks(Springer Verlag, 2011) Köseoğlu, Hasan; Türkoğlu, Fulya; Şimşek, Yılmaz; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (IJJs) of Bi2Sr2CaCu2O8+δ (Bi2212) may require mesas with large lateral dimensions. However, there are difficulties in fabrication of perfect rectangular mesas. The lateral angles of mesas should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. We patterned Ta/photoresist and photoresist/Ta/photoresist masks on Bi2212 and used selectiveionetchingtoovercomethethickphotoresistlayershading on the lateral dimension of mesa during the ion-beam etching. The reactive ion-beam etchings have been done with ion beams of Ar, N2 and O2, and we have obtained mesas about 1 µm with lateral angle of approximately 50 to 75°, which is better than the mesas fabricated with photoresist mask.