Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Passive Matrix Schottky Barrier 2d Photodiode Array on Graphene/Soi Platform(Springer Science and Business Media Deutschland GmbH, 2025) Yanilmaz, A.; Ünverdi, Ö.; Çelebi, C.We fabricated 4 × 4 pixel two-dimensional (2D) photodiode array (PDA) out of monolayer graphene and n-type silicon (n-Si) electrodes on a silicon-on-insulator (SOI) substrate. Our device design is based on passive matrix sensor array architecture consisting of individual graphene and silicon electrodes aligned perpendicular to each other. I-V measurements conducted at room temperature to reveal the electronic characteristics of graphene and Si junction in the device structure. The spectral responsivity, respond speed and the optical crosstalk of each G/Si pixels in the array have been determined by wavelength resolved and time dependent photocurrent spectroscopy measurements. Micro-Raman mapping measurements were conducted to examine the surface coverage of graphene electrode on each pixel. The results of Micro-Raman mapping measurements were correlated with the corresponding photocurrent data acquired under light illumination. We believe that this work constitutes a significant potential in integrating variety of 2D materials and SOI technology into next generation image sensing and multiple pixel light detection applications. © The Author(s) 2025.Article Citation - WoS: 32Citation - Scopus: 31Wien Effect in Interfacial Water Dissociation Through Proton-Permeable Graphene Electrodes(Nature Research, 2022) Cai, Junhao; Griffin, Eoin; Guarochico-Moreira, Victor H.; Barry, D.; Xin, B.; Yağmurcukardeş, Mehmet; Zhang, Sheng; Geim, Andre K.; Peeters, François M.; Lozada-Hidalgo, MarceloStrong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 107 V m−1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation (H2O ⇆ H+ + OH−) has remained elusive. Here we study the dissociation of interfacial water adjacent to proton-permeable graphene electrodes and observe strong acceleration of the reaction in fields reaching above 108 V m−1. The use of graphene electrodes allows measuring the proton currents arising exclusively from the dissociation of interfacial water, while the electric field driving the reaction is monitored through the carrier density induced in graphene by the same field. The observed exponential increase in proton currents is in quantitative agreement with Onsager’s theory. Our results also demonstrate that graphene electrodes can be valuable for the investigation of various interfacial phenomena involving proton transport.Article Citation - WoS: 4Citation - Scopus: 4Graphene/Soi-based Self-Powered Schottky Barrier Photodiode Array(American Institute of Physics, 2022) Yanılmaz, Alper; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, CemWe have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ∼1.36 and ∼1.27 μs rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 × 1012 Jones and a substantially small noise equivalent power of ∼0.14 pW/Hz-1/2. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.Article Citation - WoS: 13Citation - Scopus: 15Hybrid J-aggregate-graphene phototransistor(American Chemical Society, 2020) Yakar, Ozan; Balcı, Osman; Uzlu, Burkay; Polat, Nahit; Arı, Ozan; Tunç, İlknur; Balcı, SinanJ-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance band in the visible and near-infrared spectrum, and hence they have found many exciting applications in nonlinear optics, sensing, optical devices, photography, and lasing. In silver halide photography, for example, they have enormously improved the spectral sensitivity of photographic process due to their fast and coherent energy migration ability. On the other hand, graphene, consisting of single layer of carbon atoms forming a hexagonal lattice, has a very low absorption coefficient. Inspired by the fact that J-aggregates have carried the role to sense the incident light in silver halide photography, we would like to use Jaggregates to increase spectral sensitivity of graphene in the visible spectrum. Nevertheless, it has been an outstanding challenge to place isolated J-aggregate films on graphene to extensively study interaction between them. We herein noncovalently fabricate isolated J-aggregate thin films on graphene by using a thin film fabrication technique we termed here membrane casting (MC). MC significantly simplifies thin film formation of water-soluble substances on any surface via porous polymer membrane. Therefore, we reversibly modulate the Dirac point of graphene in the J-aggregate/graphene van der Waals (vdW) heterostructure and demonstrate an all-carbon phototransistor gated by visible light. Owing to the hole transfer from excited excitonic thin film to graphene layer, graphene is hole-doped. In addition, spectral and power responses of the all-carbon phototransistor have been measured by using a tunable laser in the visible spectrum. The first integration of J-aggregates with graphene in a transistor structure enables one to reversibly write and erase charge doping in graphene with visible light that paves the way for using J-aggregate/graphene vdW heterostructures in optoelectronic applications.Article Citation - WoS: 8Citation - Scopus: 10Microstructures and Mechanical Properties of Graphene Platelets-Reinforced Spark Plasma Sintered Tantalum Diboride-Silicon Carbide Composites(IOP Publishing, 2019) Gürcan, Kübra; İnci, Ezgi; Saçkan, İbrahim; Ayaş, Erhan; Gasan, HakanGraphene nanoplates reinforcement (GNPs) TaB2-SiC composites were fabricated with Spark Plazma sintering (SPS) at 1850 degrees C with a-uniaxial pressure of 50 MPa and 10 min dwell time. Systematic investigation on the effect of GNP amount of densification, microstructural and mechanical properties (microhardness and fracture toughness) of the composites were presented. Density and hardness of composites decreased with the addition of GNP, while similar to 35% increase of fracture toughness value was obtained with GNP addition. The microstructural evaluation indicated that overlapped and agglomerated GNPs increased with an increasing amount of GNP in the composites and caused to decrease of density and hardness. On the other hand, GNP was retained in the composite form even with high process temperature (1850 degrees C) and cause toughening of composites with changing the fracture mode from transgranular to transgranular/intergranular fracture. GNP pull out, crack branching, crack bridging and crack deflection were observed as main toughening mechanisms.Conference Object Molecular Dynamics Study of the Thermal Conductivity of Graphene Coated Copper(Avestia Publishing, 2019) Toprak, Kasım; Ersavaş, GizemIn this study, the thermal conductivity of various size of pure copper, pure graphene and, different number of layer graphene coated copper models are studied using non-equilibrium molecular dynamics (NEMD) simulations. Our findings show that the thermal conductivity of graphene coated copper is higher than the uncoated ones. Furthermore, results also indicate that single layer graphene (SLG) model has the highest thermal conductivity as compared to the other model. Even though multiple layer graphene (MLG) has lower thermal conductivity value compare to SLG, this study shows that the thermal conductivity of MLG coated copper has higher thermal conductivity than SLG coated one. The most important finding in this study suggests that the thermal conductivity of copper can be improved using high thermal conductivity materials like graphene. © 2019, Avestia Publishing.Article Citation - WoS: 2Citation - Scopus: 2Tuning Thermal Transport in Graphene Via Combinations of Molecular Antiresonances(Elsevier Ltd., 2018) Sevim, Koray; Sevinçli, HaldunWe propose a method to engineer the phonon thermal transport properties of low dimensional systems. The method relies on introducing a predetermined combination of molecular adsorbates, which give rise to antiresonances at frequencies specific to the molecular species. Despite their dissimilar transmission spectra, thermal resistances due to individual molecules remain almost the same for all species. On the other hand, thermal resistance due to combinations of different species are not additive and show large differences depending on the species. Using a toy model, the physics underlying the violation of resistance summation rule is investigated. It is demonstrated that equivalent resistance of two scatterers having the same resistances can be close to the sum of the constituents or ∼ 70% of it depending on the relative positions of the antiresonances. The relative positions of the antiresonances determine the net change in transmission, therefore the equivalent resistance. Since the entire spectrum is involved in phonon spectrum changes in different parts of the spectrum become important. Performing extensive first-principles based computations, we show that these distinctive attributes of phonon transport can be useful to tailor the thermal transport through low dimensional materials, especially for thermoelectric and thermal management applications.Article Citation - WoS: 5Citation - Scopus: 5Defect Induced Anderson Localization and Magnetization in Graphene Quantum Dots(Elsevier, 2018) Altıntaş, Abdulmenaf; Güçlü, Alev DevrimWe theoretically investigate the effects of atomic defect related short-range disorders and electron-electron interactions on Anderson type localization and the magnetic properties of hexagonal armchair graphene quantum dots using an extended mean-field Hubbard model and wave packet dynamics for the calculation of localization lengths. We observe that randomly distributed defects with concentrations between 1 and 5% of the total number of atoms leads to localization alongside magnetic puddle-like structures. Although the localization lengths are not affected by interactions, staggered magnetism and localization are found to be enhanced if the defects are distributed unevenly between the sublattices of the honeycomb lattice.Article Citation - WoS: 7Citation - Scopus: 7Effects of Random Atomic Disorder on the Magnetic Stability of Graphene Nanoribbons With Zigzag Edges(American Physical Society, 2018) Çakmak, Korhan Ertan; Altıntaş, Abdulmenaf; Güçlü, Alev DevrimWe investigate the effects of randomly distributed atomic defects on the magnetic properties of graphene nanoribbons with zigzag edges using an extended mean-field Hubbard model. For a balanced defect distribution among the sublattices of the honeycomb lattice in the bulk region of the ribbon, the ground-state antiferromagnetism of the edge states remains unaffected. By analyzing the excitation spectrum, we show that while the antiferromagnetic ground state is susceptible to single spin-flip excitations from edge states to magnetic defect states at low defect concentrations, its overall stability is enhanced with respect to the ferromagnetic phase.Article Citation - WoS: 134Citation - Scopus: 137Structural, Vibrational, and Electronic Properties of Single-Layer Hexagonal Crystals of Group Iv and V Elements(American Physical Society, 2018) Özdamar, Burak; Özbal, Gözde; Çınar, Mustafa Neşet; Sevim, Koray; Kurt, Gizem; Kaya, Birnur; Sevinçli, HaldunUsing first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula A2B2, where A and B belong to groups IV and V, respectively (A=C, Si, Ge, Sn, Pb; B=N, P, As, Sb, Bi). Two structural symmetries of hexagonal lattices P6m2 and P3m1 are shown to be dynamically stable, named as α- and β -phases correspondingly. Both phases have similar cohesive energies, and the α phase is found to be energetically favorable for structures except CP, CAs, CSb, and CBi, for which the β phase is favored. The effects of spin-orbit coupling and Hartree-Fock corrections to exchange correlation are included to elucidate the electronic structures. All structures are semiconductors except CBi and PbN, which have metallic character. SiBi, GeBi, and SnBi have direct band gaps, whereas the remaining semiconductor structures have indirect band gaps. All structures have quartic dispersion in their valence bands, some of which make the valence band maximum and resemble a mexican-hat shape. SnAs and PbAs have purely quartic valence band edges, i.e., E-αk4, a property reported for the first time. The predicted materials are candidates for a variety of applications. Owing to their wide band gaps, CP, SiN, SiP, SiAs, GeN, GeP can find their applications in optoelectronics. The relative band positions qualify a number of the structures as suitable for water splitting, where CN and SiAs are favorable at all pH values. Structures with quartic band edges are expected to be efficient for thermoelectric applications.