Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Conference Object Citation - WoS: 7Citation - Scopus: 7Carbon Deposition on the Stainless Steels Substrates Using Pulsed Plasma(National Institute of Optoelectronics, 2008) Pat, Suat; Balbağ, Zafer; Cenik, I.; Ekem, Naci; Okur, Salih; Vladoiu, Rodica; Musa, GeavitWe have developed a generic method for carbon deposition method for any substrates from methane pulsed plasma. The generic method has been developed for carbon deposition on the stainless steels substrates using pulsed methane plasma. Pulsed plasma was produced at atmospheric pressure methane gas and room temperatures. Methane plasma was generated using with 25kV, 25kHz pulsed power supply. Discharge current approximately 300 mA. Stainless steels probes hold in the 32mm from the methane plasma. Probes dimensions were phi=30mm, h=8mm and 4 mm.Article Citation - WoS: 2Citation - Scopus: 2Scanning Probe Oxidation Lithography on Ta Thin Films(American Scientific Publishers, 2008) Okur, Salih; Büyükköse, Serkan; Tarı, SüleymanA Semi-Contact Scanning Probe Lithography Technique (SC-SPL) has been applied to create nano-oxide patterns on Ta thin films grown by DC magnetron sputtering method on SiO 2/Si substrates. The height and linewidth profiles of nano-oxide lines created by a conductive AFM tip on Ta film surfaces were measured as a function of applied voltage, oxidation time, humidity, and tip apex curvature. The AFM surface measurements show that the height of the oxides increases linearly with increasing voltage; but there was no oxide growth, when less than 4 V was applied even at 85% relative humidity. Electrical measurements were performed and the resistivities of the TaO x layer and Ta film were obtained as 5.76 × 10 8 and 1.4 × 10 5 Ohm-cm, respectively.Article Citation - WoS: 17Citation - Scopus: 18Analysis of Interface States of the Pentacene Organic Thin-Film Phototransistor by Conductance Technique(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, FahrettinA pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface state density properties of the transistor have been investigated. A pentacene film of 200 nm thickness was deposited on the SiO2 layer with a vacuum thermal evaporator. Atomic force microscopy images of the pentacene film on SiO2 insulating layer show a homogeneous film surface with the rms roughness of 11 nm. The transistor shows p-channel characteristics, as a result of positive carriers generated in the pentacene film for the negative bias voltages applied to the gate. The photosensitivity (Iph/Idark) is measured as 1.45 at an illumination intensity of 3500 lux at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor characteristic. The field-effect mobility of the pentacene OTFT was found to be 0.021 cm2/(V s). The interface state density of the transistor was determined using conductance technique and was found to be about 1.191 × 1010 eV-1 cm-2.Article Citation - WoS: 31Citation - Scopus: 40Structural and Magnetic Characterization of Plasma Ion Nitrided Layer on 316l Stainless Steel Alloy(Elsevier Ltd., 2009) Öztürk, Orhan; Okur, Salih; Riviere, Jean PaulIn this study, an FeCrNi alloy (316L stainless steel disc) was nitrided in a low-pressure R.F. plasma at 430 °C for 72 min under a gas mixture of 60% N2-40% H2. Structural, compositional and magnetic properties of the plasma nitrided layer was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and magnetic force microscopy (MFM). The magnetic behaviour of the nitrided layer was also investigated with a vibrating sample magnetometer (VSM). Combined X-ray diffraction, cross-sectional SEM, AFM and MFM, as well as VSM analyses provide strong evidence for the formation of the γN phase, [γN-(Fe, Cr, Ni)], with mainly ferromagnetic characteristics. The uniform nature of the γN layer is clearly demonstrated by the XRD, cross-sectional SEM and AFM analyses. Based on the AFM and SEM data, the thickness of the γN layer is found to be ∼6 μm. According to the MFM and VSM analyses, ferromagnetism in the γN layer is revealed by the observation of stripe domain structures and the hysteresis loops. The cross-sectional MFM results demonstrate the ferromagnetic γN phase distributed across the plasma nitrided layer. The MFM images show variation in the size and form of the magnetic domains from one grain to another.Article Citation - WoS: 15Citation - Scopus: 17Influence of Crystallographic Orientation on Hydration of Mgo Single Crystals(Elsevier Ltd., 2009) Sütçü, Mücahit; Akkurt, Sedat; Okur, SalihThis study has been performed in order to find out the influence of crystallographic orientation on hydration of MgO single crystal substrates with (1 0 0)-, (1 1 0)-, and (1 1 1)-orientations. The samples were left in a hydration chamber with an 88% relative humidity for 18 h at room temperature. The effect of humidity on the samples was examined by scanning probe microscope (SPM) and scanning electron microscope (SEM) which showed that the degree of hydration was noticeably influenced by the crystallographic orientation. It was found that the MgO with (1 1 1)-orientation has the highest tendency to hydrate than the other orientations. Second most affected sample was (1 1 0) crystal. Loss of MgO on the surface by hydration is most severe when the crystal is oriented in (1 1 1) plane with the maximum hydrate layer thickness of 174 nm after 18 h of exposure.Article Citation - WoS: 12Citation - Scopus: 15Local Oxidation Nanolithography on Hf Thin Films Using Atomic Force Microscopy (afm)(IOP Publishing Ltd., 2009) Büyükköse, Serkan; Okur, Salih; Özyüzer, Gülnur AygünWell controlled Hf oxide patterns have been grown on a flat Hf thin film surface produced by the dc magnetron sputtering method on Si and SiOx substrates. These patterns have been created by using the technique of semi-contact scanning probe lithography (SC-SPL). The thickness and width of the oxide patterns have been measured as a function of applied voltage, duration and relative humidity. There is a threshold voltage even at 87% humidity, due to insufficient energy required to start the oxide growth process for a measurable oxide protrusion. Electrical characterization was also performed via the I-V curves of Hf and HfOx structures, and the resistivity of HfO x was found to be 4.284 × 109 Ω cm. In addition to the I-V curves, electric force microscopy and spreading surface resistance images of Hf and HfOx were obtained.Article Citation - WoS: 38Citation - Scopus: 42Layered Clay/Epoxy Nanocomposites: Thermomechanical, Flame Retardancy, and Optical Properties(John Wiley and Sons Inc., 2008) Kaya, Elçin; Tanoğlu, Metin; Okur, SalihIn this study, layered clay/polymer nano-composites were developed based on epoxy resins and montmorillonite as the nanoplatelet reinforcement. Clay particles were treated with hexadecyltrimethylammonium chloride (HTCA) through an ion exchange reaction. In this way, Na+ interlay er cations of the clay is exchanged with onium cation of the surfactant that turns the hydrophilic clays (MMT) to organophilic (OMMT) characteristics. Thermal analysis results revealed that the glass transition temperature (Tg) and the dynamic mechanical properties including the storage and loss modulus of the neat epoxy resin increases by the incorporation of clay particles. It was also found that flame resistance of the polymer is improved by the addition of the clay particles.Article Citation - WoS: 26Citation - Scopus: 24Effect of Ta Buffer Layer and Thickness on the Structural and Magnetic Properties of Co Thin Films(AVS Science and Technology Society, 2009) Vahaplar, Kadir; Tarı, Süleyman; Tokuç, Hüseyin; Okur, SalihSingle Co and Ta/Co bilayers were grown on Si(100) substrates in a magnetron sputtering system. The effect of Ta buffer layer and the thickness of Co layer on the structural and magnetic properties of the Co layers has been studied. A single Co layer shows a textured structure above thickness of 40 nm according to the x-ray diffraction (XRD) pattern. The magnetic properties of Co layers depend significantly on the thickness of the films. Ta grows as highly textured Β -Ta (tetragonal) phase on Si with a smooth surface. The XRD and atomic force microscopy results show that the Ta buffer layer improves the structural properties dramatically, resulting in a strongly textured and smoother surface morphology. The Ta layer also affects the magnetic properties of Co layers to a large extent, especially inducing an in-plane anisotropy in thin Co films.Article Citation - WoS: 43Citation - Scopus: 45Electrical and Interface Properties of Au/Dna Organic-On Structures(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, Fahrettin; Özsöz, Mehmet; Kadayıfçılar, Pınar KaraThe effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes.Article Citation - WoS: 12Citation - Scopus: 12Modification of Metal/Semiconductor Junctions by Self-Assembled Monolayer Organic Films(Elsevier Ltd., 2009) Yakuphanoğlu, Fahrettin; Okur, Salih; Özgener, HüseyinTwo new metal/molecule/semiconductor contacts, Au/n-Si/TDA/Au and Au/p-Si/ODM/Au, were fabricated to understand effect of organic compounds, tridecylamine and octadecylmercaptan self-assembled monolayer (SAM) films, on electrical charge transport properties of the metal/semiconductor junctions. The morphology of the organic monolayers deposited on Si substrates was investigated by atomic force microscopy. The molecular coverage of ODM deposited on p-Si is poorer than that of TDA on n-Si substrate. The ideality factors of the p-Si/ODM and n-Si/TDA diodes were found to be 1.66 and 1.48, respectively. The electrical results show that the tridecylamine monolayer passivated junction has a lower ideality factor. The ideality factor indicates clear dependence on two different type functional groups R-SH (Thiol) and R-NH2 (Amin) groups and it increases with different functional groups of organic molecule. The barrier height φb value of the n-Si/TDA diode is smaller than that of p-Si/ODM diode, as a result of chain length of the SAM organic molecules. The interface state density Dit values of the diodes were determined using conductance technique. The n-Si/TDA diode has the smaller interface state density according to p-Si/ODM diode. We have evaluated that the organic molecules control the electronic parameters of metal/semiconductor diodes and thus, organic modification helps to get one step closer towards to new organic assisted silicon based microelectronic devices.
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