Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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2006 - 200912010 - 20111

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Department: search.filters.department.İzmir Institute of Technology. PhysicsSubject: search.filters.subject.Simulation

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  • Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Determination of the Dill Parameters of Thick Positive Resist for Use in Modeling Applications
    (Elsevier Ltd., 2011) Roeder, G.; Liu, S.; Aygün, Gülnur; Evanschitzky, P.; Erdmann, A.; Schellenberger, M.; Pfitzner, L
    The determination of Dill parameters of thick resist is very important to improve simulation models of resist exposure and real world processes. A new extraction technique of Dill parameters based on spectroscopic ellipsometry in combination with an advanced resist exposure model is proposed for thick resist analysis. The complex refractive index of the resist is related to the relative concentration of the photoactive compound in the resist in order to describe the vertical distribution of the refractive index and the extinction coefficient. Moreover, Dill parameters are extracted by directly fitting the bleaching curves to the measured ellipsometry data. The new approach was investigated experimentally by spectroscopic ellipsometry measurements on AZ5214E resist with two moderate layer thickness values in order to verify the accuracy of the new method. Dill parameters were extracted by using this new technique and by applying resist samples subjected to different exposure doses. Possible reasons for the variation of Dill parameters depending on resist thickness are explained. Furthermore, advantages, limitations and potential improvements of the model are discussed. Finally, the impact of Dill parameter variation on image formation in the resist is demonstrated by applying the spectroscopic ellipsometer analysis results as input parameters to the lithography simulator Dr.LiTHO.
  • Article
    Citation - WoS: 50
    Citation - Scopus: 53
    Nanoscale Oxide Growth on Al Single Crystals at Low Temperatures: Variable Charge Molecular Dynamics Simulations
    (American Physical Society, 2006) Hasnaoui, A.; Politano, O.; Salazar, J. M.; Aral, Gürcan
    We investigate the oxidation of aluminum low-index surfaces [(100), (110), and (111)] at low temperatures (300-600 K) and three different gas pressure values. We use molecular dynamics (MD) simulations with dynamic charge transfer between atoms where the interaction between atoms is described by the Es+ potential composed of the embedded atom method (EAM) potential and an electrostatic contribution. In the considered temperature range and under different gas pressure conditions, the growth kinetics follow a direct logarithmic law where the oxide thickness is limited to a value of ∼3 nm. The fitted curves allow us to determine the temperature and the pressure dependencies of the parameters involved in the growth law. During the adsorption stage, we observe a rotation of the oxygen pair as a precursor process to its dissociation. In most cases, the rotation aligns the molecule vertically to the Al surface. The separation distance after dissociation ranges from 3 to 9. Atomistic observations revealed that the oxide presents a dominant tetrahedral (Al O4) environment in the inner layer and mixed tetrahedral and octahedral (Al O6) environments in the outer oxide region when the oxide thickness reaches values beyond ∼2 nm.