Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Department: search.filters.department.Izmir Institute of TechnologySubject: search.filters.subject.Magnetron Sputtering

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  • Conference Object
    Citation - Scopus: 2
    Magnetron Sputtering Deposition of Sb2se3thin Films: Physical Property Characterizations and Its Relevance for Photovoltaics
    (Institute of Electrical and Electronics Engineers Inc., 2020) Gundogan,S.H.; Ozyuzer,L.; Aygun,G.; Cantas,A.
    The absorber layer is a significant part of the solar cell configuration because of its role in determining the efficiency. Since the properties of the chalcogenides have been studied intensively, the Sb2Se3 material has come into prominence. In thin film technology, the most effective ways of increasing the performance are the rate of photon absorption, long material life, carrier efficiency and the quality of the interface. Sb2Se3 gets more attention than others due to its optoelectronic properties. Sb2Se3 has a suitable band gap (Eg), long term material stability, and a relatively simple composition with non-Toxic and earth abundant elements. All these features make Sb2Se3 a promising candidate for use as an absorber layer in thin film photovoltaics (PVs). In this study, Sb2Se3 films have been grown with DC magnetron sputtering method onto soda lime glass (SLG) substrates with different time durations. Morphological, structural, and optical properties of Sb2Se3 thin films were systematically investigated as a function of the thickness for photovoltaic applications. Our results indicate that the optical transmission, absorption behavior, and bandgap energy are strongly dependent on the thickness of the film. © 2020 IEEE.
  • Conference Object
    Citation - Scopus: 2
    The Effect of Ar Gas Flow Rate on Structure and Optical Properties of Magnetron Sputtered Sb2se3thin Films for Solar Cells
    (Institute of Electrical and Electronics Engineers Inc., 2020) Gundogan,S.H.; Ozyuzer,L.; Aygun,G.; Cantas,A.
    Recently, antimony selenide (Sb2Se3) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-Toxic elements contrary to other chalcogenide based solar cells. In the present work, Sb2Se3 absorber films were grown by radio-frequency (RF) magnetron sputtering technique using binary single target and employing various argon flow rates, and then they were annealed under argon atmosphere inside a tubular furnace. Sb2Se3 thin films were investigated using X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, Raman spectroscopy, and UV-VIS NIR spectrophotometer. The effects of argon flow rate, one of the sputtering parameters, on the properties of the Sb2Se3 films were investigated. The significance of argon flow rate, that used during film deposition, on the observing of Se loss, antimony oxide formation and the change in the surface morphology was also addressed. We observed that the dominant crystal orientation varied with respect to argon flow rate. It was further detected that high argon flow rates cause the decomposition of Sb2Se3 structure and formation of antimony oxide phase. The overall analyses revealed that argon flow rate used while sputtering is effective in changing the structural, and optical properties of the Sb2Se3 thin films. © 2020 IEEE.