Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 2Citation - Scopus: 6Incremental Testing in Software Product Lines-An Event Based Approach(IEEE, 2023) Tuğlular, Tuğkan; Beyazıt, Mutlu; Öztürk, Dilek; 03.04. Department of Computer Engineering; 03. Faculty of Engineering; 01. Izmir Institute of TechnologyOne way of developing fast, effective, and high-quality software products is to reuse previously developed software components and products. In the case of a product family, the software product line (SPL) approach can make reuse more effective. The goal of SPLs is faster development of low-cost and high-quality software products. This paper proposes an incremental model-based approach to test products in SPLs. The proposed approach utilizes event-based behavioral models of the SPL features. It reuses existing event-based feature models and event-based product models along with their test cases to generate test cases for each new product developed by adding a new feature to an existing product. Newly introduced featured event sequence graphs (FESGs) are used for behavioral feature and product modeling; thus, generated test cases are event sequences. The paper presents evaluations with three software product lines to validate the approach and analyze its characteristics by comparing it to the state-of-the-art ESG-based testing approach. Results show that the proposed incremental testing approach highly reuses the existing test sets as intended. Also, it is superior to the state-of-the-art approach in terms of fault detection effectiveness and test generation effort but inferior in terms of test set size and test execution effort.Article Citation - WoS: 50Citation - Scopus: 53Nanoscale Oxide Growth on Al Single Crystals at Low Temperatures: Variable Charge Molecular Dynamics Simulations(American Physical Society, 2006) Hasnaoui, A.; Aral, Gürcan; Salazar, J. M.; Aral, Gürcan; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyWe investigate the oxidation of aluminum low-index surfaces [(100), (110), and (111)] at low temperatures (300-600 K) and three different gas pressure values. We use molecular dynamics (MD) simulations with dynamic charge transfer between atoms where the interaction between atoms is described by the Es+ potential composed of the embedded atom method (EAM) potential and an electrostatic contribution. In the considered temperature range and under different gas pressure conditions, the growth kinetics follow a direct logarithmic law where the oxide thickness is limited to a value of ∼3 nm. The fitted curves allow us to determine the temperature and the pressure dependencies of the parameters involved in the growth law. During the adsorption stage, we observe a rotation of the oxygen pair as a precursor process to its dissociation. In most cases, the rotation aligns the molecule vertically to the Al surface. The separation distance after dissociation ranges from 3 to 9. Atomistic observations revealed that the oxide presents a dominant tetrahedral (Al O4) environment in the inner layer and mixed tetrahedral and octahedral (Al O6) environments in the outer oxide region when the oxide thickness reaches values beyond ∼2 nm.