Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 4Citation - Scopus: 4Identification of a Magnetic Phase Via a Raman Spectrum in Single-Layer Mnse: an Ab Initio Study(Elsevier, 2022) Yayak, Yankı Öncü; Şahin, Hasan; Yağmurcukardeş, MehmetMotivated by the recent experimental realization of single-layer two-dimensional MnSe [ACS Nano2021, 15, 13794-13802], structural, magnetic, elastic, vibrational, and electronic properties of single-layer MnSe are investigated by using density functional theory-based calculations. Among four different magnetic phases, namely, ferromagnetic (FM) and Nẽel-, zigzag-, and stripy-antiferromagnetic (AFM) phases, the Nẽel-AFM structure is found to be the energetically most favorable phase. Structural optimizations show the formation of in-plane anisotropy within the structures of zigzag- and stripy-AFM phases in single-layer MnSe. For the dynamically stable four magnetic phases, predicted Raman spectra reveal that each phase exhibits distinctive vibrational features and can be distinguished from each other. In addition, the elastic constants indicate the mechanical stability of each magnetic phase in single-layer MnSe and reveal the soft nature of each phase. Moreover, electronic band dispersion calculations show the indirect band gap semiconducting nature with varying electronic band gap energies for all magnetic phases. Furthermore, the atomic orbital-based density of states reveals the existence of out-of-plane orbitals dominating the top valence states in zigzag- and stripy-AFM phases, giving rise to the localized states. The stability of different magnetic phases and their distinct vibrational and electronic properties make single-layer MnSe a promising candidate for nanoelectronic and spintronic applications.Article Citation - WoS: 2Citation - Scopus: 2Magnetic Single-Layer Nanoribbons of Manganese Oxide: Edge- and Width-Dependent Electronic Properties(Royal Society of Chemistry, 2022) Sözen, Yiğit; Topkıran, Uğur; Şahin, HasanIn the present work, the structural, magnetic, and electronic properties of the two- and one-dimensional honeycomb structures of recently synthesized MnO [Zhang et al., Hexagonal metal oxide monolayers derived from the metal-gas interface, Nat. Mater., 2021, 20, 1073-1078] are investigated by using first-principles calculations. Our calculations show that the single-layer 2D MnO crystal has a degenerate antiferromagnetic (AFM) ground state and a relatively less favorable ferromagnetic (FM) state. In addition, the magnetic anisotropy calculations unveil that the easy-axis direction for magnetism originating from unpaired electron states in manganese atoms is normal to the crystal plane. Electronically, while the FM MnO is a direct semiconductor with a narrow bandgap, AFM phases display large indirect bandgap semiconducting behavior. Moreover, the calculations on nanoribbons of MnO reveal that zigzag-edged ribbons display metallic behaviors, whereas armchair-edged nanoribbons are semiconductors. Magnetically, for both zigzag- or armchair-edged nanoribbons, the AFM order perpendicular to the nanoribbon growth direction is found to be favorable over the other AFM and FM orders. Moreover, depending on the edge symmetry and ribbon width, forbidden bandgap values of nanoribbons display distinct family behaviors.Article Citation - WoS: 6Citation - Scopus: 7Interface-Dependent Phononic and Optical Properties of Geo/Moso Heterostructures(Royal Society of Chemistry, 2022) Yağmurcukardeş, Mehmet; Sözen, Yiğit; Başkurt, Mehmet; Peeters, François M.; Şahin, HasanThe interface-dependent electronic, vibrational, piezoelectric, and optical properties of van der Waals heterobilayers, formed by buckled GeO (b-GeO) and Janus MoSO structures, are investigated by means of first-principles calculations. The electronic band dispersions show that O/Ge and S/O interface formations result in a type-II band alignment with direct and indirect band gaps, respectively. In contrast, O/O and S/Ge interfaces give rise to the formation of a type-I band alignment with an indirect band gap. By considering the Bethe-Salpeter equation (BSE) on top of G0W0 approximation, it is shown that different interfaces can be distinguished from each other by means of the optical absorption spectra as a consequence of the band alignments. Additionally, the low-and high-frequency regimes of the Raman spectra are also different for each interface type. The alignment of the individual dipoles, which is interface-dependent, either weakens or strengthens the net dipole of the heterobilayers and results in tunable piezoelectric coefficients. The results indicate that the possible heterobilayers of b-GeO/MoSO asymmetric structures possess various electronic, optical, and piezoelectric properties arising from the different interface formations and can be distinguished by means of various spectroscopic techniques.Article Citation - WoS: 171Citation - Scopus: 169Janus Single Layers of In2sse: a First-Principles Study(American Physical Society, 2018) Kandemir, Ali; Şahin, HasanBy performing first-principles calculations, we propose a stable direct band gap semiconductor Janus single-layer structure, In2SSe. The binary analogs of the Janus structure, InS and InSe single layers are reviewed to evince the structural and electronic relation with In2SSe. The structural optimization calculations reveal that a Janus In2SSe single layer has hexagonal geometry like the InS and InSe single layers, which are also its structural analogs. The Janus single layer is dynamically stable, as indicated by the phonon spectrum. The electronic band diagram of the Janus structure shows that an In2SSe single layer is a direct band gap semiconductor, in contrast to its analogs, InS and InSe single layers, which are indirect band gap semiconductors. Nevertheless, it is found that the strain effect on electronic properties of the InS and InSe single layers designates the electronic structure of the Janus single layer. A rough model for the construction of the electronic band diagram of the Janus structures is discussed, and it is indicated that the difference in work functions of chalcogenide sides in the Janus structure determines the construction of the electronic structure. It is found that the Janus structure is a robust direct gap semiconductor under tolerable strain; for that reason, the Janus In2SSe single layer is a candidate for optoelectronic nanodevice applications.Article Citation - WoS: 15Citation - Scopus: 21Triboluminescent Electrospun Mats With Blue-Green Emission Under Mechanical Force(American Chemical Society, 2017) İncel, Anıl; Varlıklı, Canan; McMillen, Colin D.; Demir, Mustafa MuammerFibrous mechanosensing elements can provide information about the direction of crack propagation and the mechanism of material failure when they are homogeneously dispersed into the bulk volume of materials. A fabrication strategy of fibrous systems showing triboluminescent (TL) responses is in high demand for such applications. In this work, micrometer-sized Cu(NCS)(py)2(PPh3) crystals were synthesized, and polymeric fibrous mats containing the TL crystals were obtained via electrospinning as a stress probe for the determination of mechanical impact. Four different polymeric systems have been employed (PMMA, PS, PU, and PVDF), and the mechano-optical sensing performance of electrospun mats of the polymer-crystal composites was measured. Photophysical properties (quantum yield, band gap, and broadness of the emission) of the TL crystal/electrospun mat composites were also studied. TL and PL emission maxima of the PU-based composite mat show identical behavior due to the chemical affinity between the two structures and the smallest fiber diameter. Moreover, the PU fiber mats exhibit long-lived bluish-green emission persisting over a large number of drops.Article Citation - WoS: 10Citation - Scopus: 11Single layer PbI2: Hydrogenation-driven reconstructions(Royal Society of Chemistry, 2016) Bacaksız, Cihan; Şahin, HasanBy performing density functional theory-based calculations, we investigate how a hydrogen atom interacts with the surfaces of monolayer PbI2 and how one- and two-side hydrogenation modifies its structural, electronic, and magnetic properties. Firstly, it was shown that the T-phase of single layer PbI2 is energetically more favorable than the H-phase. It is found that hydrogenation of its surfaces is possible through the adsorption of hydrogen on the iodine sites. While H atoms do not form a particular bonding-type at low concentration, by increasing the number of hydrogenated I-sites well-ordered hydrogen patterns are formed on the PbI2 matrix. In addition, we found that for one-side hydrogenation, the structure forms a (2 × 1) Jahn-Teller type distorted structure and the bandgap is dramatically reduced compared to hydrogen-free single layer PbI2. Moreover, in the case of full hydrogenation, the structure also possesses another (2 × 2) reconstruction with a reduction in the bandgap. The easily tunable electronic and structural properties of single layer PbI2 controlled by hydrogenation reveal its potential uses in nanoscale semiconducting device applications.Article Citation - WoS: 63Citation - Scopus: 64Vacancy Formation and Oxidation Characteristics of Single Layer Tis3(American Chemical Society, 2015) İyikanat, Fadıl; Şahin, Hasan; Senger, Ramazan Tugrul; Peeters, François M.The structural, electronic, and magnetic properties of pristine, defective, and oxidized monolayer TiS3 are investigated using first-principles calculations in the framework of density functional theory. We found that a single layer of TiS3 is a direct band gap semiconductor, and the bonding nature of the crystal is fundamentally different from other transition metal chalcogenides. The negatively charged surfaces of single layer TiS3 makes this crystal a promising material for lubrication applications. The formation energies of possible vacancies, i.e. S, Ti, TiS, and double S, are investigated via total energy optimization calculations. We found that the formation of a single S vacancy was the most likely one among the considered vacancy types. While a single S vacancy results in a nonmagnetic, semiconducting character with an enhanced band gap, other vacancy types induce metallic behavior with spin polarization of 0.3-0.8 μB. The reactivity of pristine and defective TiS3 crystals against oxidation was investigated using conjugate gradient calculations where we considered the interaction with atomic O, O2, and O3. While O2 has the lowest binding energy with 0.05-0.07 eV, O3 forms strong bonds stable even at moderate temperatures. The strong interaction (3.9-4.0 eV) between atomic O and TiS3 results in dissociative adsorption of some O-containing molecules. In addition, the presence of S-vacancies enhances the reactivity of the surface with atomic O, whereas it had a negative effect on the reactivity with O2 and O3 molecules.Article Citation - WoS: 60Citation - Scopus: 64Improvement of Optical and Electrical Properties of Ito Thin Films by Electro-Annealing(Elsevier Ltd., 2015) Köseoğlu, Hasan; Türkoğlu, Fulya; Kurt, Metin; Yaman, Mutlu Devran; Akça, Fatime Gülşah; Aygün, Gülnur; Özyüzer, LütfiThe effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ITO thin films in vacuum and air were compared. Electro-annealing was performed by applying 0.75, 1.00, 1.25 and 1.50 A constant ac current to the ITO thin films. It was observed that the crystallinity of the films was better for the ITO thin films electro-annealed in vacuum. The changes in sheet resistance of electro-annealed ITO thin films with applied currents were detailed. The transmittance of the films increased for both electro-annealing in vacuum and air. A correlation between band-gap and resistivity for all of the electro-annealed thin films was observed.Article Citation - WoS: 12Citation - Scopus: 12High Transmission Through a 90° Bend in a Polarization-Independent Single-Mode Photonic Crystal Waveguide(The Optical Society, 2015) Erol, Adem Enes; Sözüer, Hüseyin SamiWe propose a polarization-independent single-mode waveguide, using a two-dimensional square photonic crystal with a complete band gap. The waveguide is tuned such that both TE and TM modes have the same group velocity and zero group velocity dispersion at the centergap frequency. We also present results for a 90° bend with transmission values of 98% for both modes.Article Citation - WoS: 47Citation - Scopus: 49Simultaneous Identification of Spectral Properties and Sizes of Multiple Particles in Solution With Subnanometer Resolution(John Wiley and Sons Inc., 2016) Karabudak, Engin; Brookes, Emre; Lesnyak, Vladimir; Gaponik, Nikolai; Eychmüller, Alexander; Walter, Johannes; Segets, Doris; Peukert, Wolfgang; Wohlleben, Wendel; Demeler, Borries; Cölfen, HelmutWe report an unsurpassed solution characterization technique based on analytical ultracentrifugation, which demonstrates exceptional potential for resolving particle sizes in solution with sub-nm resolution. We achieve this improvement in resolution by simultaneously measuring UV/Vis spectra while hydrodynamically separating individual components in the mixture. By equipping an analytical ultracentrifuge with a novel multi-wavelength detector, we are adding a new spectral discovery dimension to traditional hydrodynamic characterization, and amplify the information obtained by orders of magnitude. We demonstrate the power of this technique by characterizing unpurified CdTe nanoparticle samples, avoiding tedious and often impossible purification and fractionation of nanoparticles into apparently monodisperse fractions. With this approach, we have for the first time identified the pure spectral properties and band-gap positions of discrete species present in the CdTe mixture.