Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 3Citation - Scopus: 2Electrocaloric Behaviour of Tape Cast and Grain Oriented Nbt-Kbt Ceramics(Elsevier Sci Ltd, 2024) Unal, Muhammet Ali; Karakaya, Merve; Irmak, Tugce; Yildirim-Ozarslan, Gokce; Avci, A. Murat; Fulanovic, Lovro; Adem, UmutWe have investigated the effects of grain orientation and tape casting process on the electrocaloric properties of 0.82Na(0.5)Bi(0.5)TiO(3)-0.18 K0.5Bi0.5TiO3 (0.82NBT-0.18KBT) ceramics at the Morphotropic Phase Boundary (MPB), using direct and indirect measurements. We observe a larger electrocaloric response for the template-free ceramics compared to 7 and 10 wt% template containing ones, suggesting that grain orientation along rhombohedral < 100 > does not improve the electrocaloric response. Indirect measurements yielded a large adiabatic temperature change of around 3 K under an electric field of 50 kV/cm, which is significantly higher than 0.9 K reached at a lower electric field of 40 kV/cm using the direct measurement.Article Citation - WoS: 3Citation - Scopus: 2Electrocaloric Behaviour of Tape Cast and Grain Oriented Nbt-Kbt Ceramics(Elsevier Sci Ltd, 2024) Unal, Muhammet Ali; Karakaya, Merve; Irmak, Tugce; Yildirim-Ozarslan, Gokce; Avci, A. Murat; Fulanovic, Lovro; Adem, UmutWe have investigated the effects of grain orientation and tape casting process on the electrocaloric properties of 0.82Na(0.5)Bi(0.5)TiO(3)-0.18 K0.5Bi0.5TiO3 (0.82NBT-0.18KBT) ceramics at the Morphotropic Phase Boundary (MPB), using direct and indirect measurements. We observe a larger electrocaloric response for the template-free ceramics compared to 7 and 10 wt% template containing ones, suggesting that grain orientation along rhombohedral < 100 > does not improve the electrocaloric response. Indirect measurements yielded a large adiabatic temperature change of around 3 K under an electric field of 50 kV/cm, which is significantly higher than 0.9 K reached at a lower electric field of 40 kV/cm using the direct measurement.Article Citation - WoS: 3Citation - Scopus: 3Effects of Different Precursors on the Aging and Electrocaloric Properties of Mn-Doped Ba0.95sr0.05tio3 Ceramics(Springer, 2023) Karakaya, Merve; Erdem, Emre; Akdoğan, Yaşar; Adem, UmutIn this study, the effects of different types of Mn precursors (MnO2 and Mn2O3) and sintering temperature on the defect dipole formation, ferroelectric aging and electrical properties were investigated by using Ba0.95Sr0.05TiO3 ceramics as the base. Both Mn precursors were substituted to the Ti-site as 1 mol% and two different sintering temperatures of 1325 and 1400 degrees C were used to study the effect of grain size. We deduced that slightly higher amounts of Mn2+ can be incorporated into the perovskite structure when MnO2 is used as the precursor, by using X-ray diffraction and electron paramagnetic resonance spectroscopy. Mn-doped samples sintered at 1325 degrees C age faster than those sintered at 1400 degrees C. Aging caused a decrease in the electrocaloric effect whereas Mn-doping increased it. This study shows that Mn precursor used for the acceptor doping affects the amount of Mn incorporated into the structure and therefore electrical properties of the resulting ceramics.Article Citation - WoS: 3Citation - Scopus: 4Development of Textured Lead-Free Nbt-Based Piezoelectric Materials in a Matrix, Synthesized by an Alternative Route, Via Templated Grain Growth(Springer, 2023) Çoban Tetik, Hatice Şule; Suvacı, Ender; Avcı, A. Murat; Adem, Umut; Karakaya, MerveIn this study, (1−x)(K0.5Bi0.5TiO3-BaTiO3)−xNa0.5Bi0.5TiO3 KBT:BT = 2:1 where x = 0.8 (KBT-BT-NBT) (001) textured lead-free piezoelectric ceramics were fabricated using BT template by templated grain growth with tape casting. Unlike the commonly used matrix preparation method, which is the calcination of all raw materials in one step, the matrix phase was prepared in a different way by first preparing KBT, BT and NBT powders separately and then by calcining the mixtures of these powders, so that effect of the matrix, synthesized by this alternative route, on texture development properties was evaluated. In addition, the effect of BT template content on the grain orientation with different sintering temperature and time, structure evolution, phase stability and piezoelectric properties were investigated to assess the materials’ actuating performance. The highest Lotgering factor of 81% was achieved for the textured ceramics with 10 wt% BT templates sintered at 1150 °C for 48 h. Compared to the one-step synthesis method, similar Lotgering factor values were obtained at lower sintering temperatures in the matrix, synthesized by the alternative 2-step method. The highest piezoelectric constant, remnant polarization, strain value and depolarization temperature were also obtained from the same sample, as ~ 190 pC/N, 30 kV/cm, 25% at 50 kV/cm and ~ 165 °C, respectively. The results show that the textured, lead free K0.5Bi0.5TiO3-BaTiO3-Na0.5Bi0.5TiO3 (KBT-BT-NBT) ceramics that are developed by using the matrix, synthesized by the alternative 2-step method, can be very promising lead-free electroceramics for high performance actuator applications.Article Citation - WoS: 11Citation - Scopus: 11Enhanced Room Temperature Energy Storage Density of Bi(li1/3ti2 Substituted Bi0.5na0.5tio3-Batio3 Ceramics(IOP Publishing, 2021) Karakaya, Merve; Adem, UmutFor high power electronics applications, relaxor ferroelectrics are promising materials due to their superior energy storage properties. In this study, we investigate the energy storage properties of novel lead free relaxor ferroelectric ceramics (1-x)(0.92Bi(0.5)Na(0.5)TiO(3)-0.08BaTiO(3))-xBi(Li1/3Ti2/3)O-3 (abbreviated as BNT-8BT-xBLT). BNT-8BT composition which is close to morphotropic phase boundary was chosen as the base due to its large maximum polarization (P-m) and higher ratio of weakly polar tetragonal phase which is expected to facilitate ergodic relaxor behavior and improve energy storage density. The substitution of BLT to the BNT-8BT strongly disrupts the correlations between the polar nanoregions and the transition from nonergodic to ergodic relaxor state occurs already at x = 0.02 BLT at room temperature. Largest energy density (W-rec) at 61 kV cm(-1) was obtained for x = 0.02 sample (0.656 J cm(-3)), followed by x = 0.03 (W-rec = 0.614 J cm(-3)) and x = 0.05 (W-rec= 0.559 J cm(-3)). The x = 0.02 sample keeps its energy storage density at high temperatures (i.e. W-rec= 0.88 J cm(-3,) eta = 97%, E-m= 65 kV cm(-1) at 125 degrees C), while larger electric field (up to 89 kV cm(-1)) could be applied to the x = 0.05 sample with the smallest grain size and energy density of 1.03 J cm(-3) was reached at room temperature. Energy storage density values of BLT substituted materials normalized per unit applied electric field are promising among BNT-based materials.Article Citation - WoS: 2Citation - Scopus: 2Surface Roughness Estimation of Mbe Grown Cdte/Gaas(211)b by Ex-Situ Spectroscopic Ellipsometry(American Institute of Physics, 2016) Karakaya, Merve; Bilgilisoy, Elif; Arı, Ozan; Selamet, YusufSpectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data analysis. Surface roughness cannot be determined by the optical model if oxide is included. We show that roughness can be accurately estimated, without any optical model, by utilizing the correlation between SE data (namely the imaginary part of the dielectric function, <ϵ2 > or phase angle, ψ) and atomic force microscopy (AFM) roughness. <ϵ2 > and ψ values at 3.31 eV, which corresponds to E1 critical transition energy of CdTe band structure, are chosen for the correlation since E1 gives higher resolution than the other critical transition energies. On the other hand, due to the anisotropic characteristic of (211) oriented CdTe surfaces, SE data (<ϵ2 > and ψ) shows varieties for different azimuthal angle measurements. For this reason, in order to estimate the surface roughness by considering these correlations, it is shown that SE measurements need to be taken at the same surface azimuthal angle. Estimating surface roughness in this manner is an accurate way to eliminate cumbersome surface roughness measurement by AFM.Article Citation - WoS: 11Citation - Scopus: 12Characterization of Cdte Growth on Gaas Using Different Etching Techniques(Springer Verlag, 2015) Bilgilisoy, Elif; Özden, Selin; Bakali, Emine; Karakaya, Merve; Selamet, YusufCdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm−2 to 2 × 108 cm−2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm−2 to 7 × 107 cm−2 range for samples with thicknesses <2 μm.Article Citation - WoS: 3Citation - Scopus: 3Growth and Characterization of Cdte Absorbers on Gaas by Mbe for High Concentration Pv Solar Cells(John Wiley and Sons Inc., 2015) Arı, Ozan; Polat, Mustafa; Karakaya, Merve; Selamet, YusufCdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm-1 in solar radiation spectrum.