Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

Browse

Filters

2014 - 20152

Settings

Institution Author: search.filters.institutionAuthor.Zareie, Hadi M.Subject: search.filters.subject.Scanning electron microscopy

Search Results

Now showing 1 - 2 of 2
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Gold Nanorod Encapsulated Bubbles
    (Royal Society of Chemistry, 2015) Tomak, Aysel; Zareie, Hadi M.
    A simple method has been described for synthesizing gold nanorods (GNRs) encapsulated bubbles in a controlled manner. The method involves the use of nitrogen gas in the seed-mediated synthesis method routinely used for synthesis of GNRs. Control over the morphology of the nanostructures was achieved by nitrogen gas flow. The synthesized structures were examined by UV-Vis Spectroscopy, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). New structures of this type could conceivably serve as plasmonic biosensors, nanodevices and photothermal theranostics with dual modality imaging functionality. © The Royal Society of Chemistry 2015.
  • Article
    Citation - Scopus: 1
    Charging of Gold/Metal Oxide/Gold Nanocapacitors in a Scanning Electron Microscope
    (IOP Publishing Ltd., 2014) Coutts, Michael J.; Zareie, Hadi M.; Cortie, Michael B.; McDonagh, Andrew Michael
    Triangular parallel-plate nanocapacitors were fabricated by a combination of microsphere lithography and physical vapor deposition. The devices were comprised of a 20 nm layer of dielectric material sandwiched between two 20 nm layers of gold. Dielectric materials with a range of relative permittivities were investigated. Charging of the capacitors was probed in a scanning electron microscope (SEM) by monitoring the change in brightness of the images of the devices as a function of time. The time constants, RC, associated with the charging of the capacitors, were extracted from the SEM grayscale data. The resulting average RC values were 248 ± 27 s for SiO2, 70 ± 8 s for Al2O3, 113 ± 80 s for ZnO and 125 ± 13 s for HfO2. These values are consistent with the anticipated RC values based on the resistivities and permittivities of the materials used in the devices and importantly, were measured without the need to attach any wires or leads.