Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 52Citation - Scopus: 64Epitaxial Graphene Contact Electrode for Silicon Carbide Based Ultraviolet Photodetector(IOP Publishing Ltd., 2015) Kuşdemir, Erdi; Özkendir, Dilce; Fırat, Volkan; Çelebi, CemWe present the fabrication and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial graphene and SiC semiconductor. As-grown single layer epitaxial graphene is interdigitated as transparent conductive electrode to probe photo-generated charge carriers in a semi-insulating 4H-SiC substrate. The fabricated device exhibits the typical current-voltage characteristics of a conventional metal-semiconductor-metal type photodetector with low leakage current. Time-resolved photocurrent measurements suggest an excellent photocurrent reversibility and high response speed of the device. The measurements performed for different illumination wavelengths showed that the sample reveals higher responsivity values when it is exposed to the light with 254 nm wavelength. The obtained results imply that epitaxial graphene can be used readily as transparent conductive electrode for SiC based optoelectronic device applications.Article Citation - WoS: 27Citation - Scopus: 34Chitosan/Montmorillonite Composite Nanospheres for Sustained Antibiotic Delivery at Post-Implantation Bone Infection Treatment(IOP Publishing Ltd., 2019) Kımna, Ceren; Değer, Sibel; Tamburacı, Sedef; Tıhmınlıoğlu, FundaDespite the advancements in bone transplantation operations, inflammation is still a serious problem that threatens human health at the post-implantation period. Conventional antibiotic therapy methods may lead to some side effects such as ototoxicity and nephrotoxicity, especially when applied in high doses. Therefore, local drug delivery systems play a vital role in bone disorders due to the elimination of the disadvantages introduced by conventional methods. In the presented study, it was aimed to develop Vancomycin (VC) and Gentamicin (GC) loaded chitosan-montmorillonite nanoclay composites (CS/MMT) to provide required antibiotic doses to combat post-implantation infection. CS/MMT nanocomposite formation was supplied by microfluidizer homogenization and spherical drug carrier nanoparticles were obtained by electrospraying technique. Three factors; voltage, distance and flowrate were varied to fabricate spherical nanoparticles with uniform size. Emprical model was developed to predict nanosphere size by altering process variables. Nanospheres were characterized in terms of morphology, hydrodynamic size, zeta potential, drug encapsulation efficiency and release profile. Drug loaded nanospheres have been successfully produced with a size range of 180-350 nm. Nanocomposite drug carriers showed high encapsulation efficiency (80%-95%) and prolonged release period when compared to bare chitosan nanospheres. The drug release from nanocomposite carriers was monitored by diffusion mechanism up to 30 d. The in vitro release medium of nanospheres showed strong antimicrobial activity against gram-positive S. aureus and gram-negative E. coli bacteria. Furthermore, it was found that the nanospheres did not show any cytotoxic effect to fibroblast (NIH/3T3) and osteoblast (SaOS-2) cell lines. The results demonstrated that the prepared composite nanospheres can be a promising option for bone infection prevention at the post implantation period.Article Citation - WoS: 28Citation - Scopus: 30P3HT-graphene bilayer electrode for Schottky junction photodetectors(IOP Publishing Ltd., 2018) Aydın, Hasan; Kalkan, Sırrı Batuhan; Varlıklı, Canan; Çelebi, CemWe have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.Article Citation - WoS: 35Citation - Scopus: 38Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells(IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, GülnurIn this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.Article Citation - WoS: 42Citation - Scopus: 46Importance of Cds Buffer Layer Thickness on Cu2znsns4-Based Solar Cell Efficiency(IOP Publishing Ltd., 2018) Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Özyüzer, Gülnur AygünCu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding the composition and structure of the CZTS absorber layer is necessary to obtain efficient solar cells. With this aim, x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy and x-ray photoelectron spectroscopy were used to investigate the CZTS absorber layers. CZTS absorber films were obtained and found to be Cu-poor and Zn-rich in composition, which are both qualities desired for efficient solar cells. CdS was used as a buffer layer and was grown by the chemical bath deposition technique. The optical properties of CdS films on SLG were searched for using a spectroscopic ellipsometer and the results revealed that the bandgap increases with film thickness increment. CZTS-based solar cells with different CdS buffer layer thicknesses were prepared using a SLG/Mo/CZTS/CdS/ZnO/AZO solar cell configuration. The influence of the CdS buffer layer thickness on the performance of the CZTS solar cells was investigated. Device analysis showed that electrical characteristics of solar cells strongly depend on the buffer layer's thickness. Highly pronounced changes in V OC, fill factor and J SC parameters, which are the main efficiency limiting factors, with changing buffer layer thicknesses were observed. Our experiments confirmed that decreasing the CdS thickness improved the efficiency of CZTS solar cells down to the lowest thickness limit.Article Citation - WoS: 29Citation - Scopus: 31Wigner Crystallization in Topological Flat Bands(IOP Publishing Ltd., 2018) Jaworowski, Blazej; Güçlü, Alev Devrim; Kaczmarkiewicz, Piotr; Kupczynski, Michal; Potasz, Pawel; Wójs, ArkadiuszWe study the Wigner crystallization on partially filled topological flat bands of kagome, honeycomb and checkerboard lattices. We identify the Wigner crystals (WCs) by analyzing the Cartesian and angular Fourier transform of the pair correlation density of the many-body ground state obtained using exact diagonalization. The crystallization strength, measured by the magnitude of the Fourier peaks, increases with decreasing particle density. The Wigner crystallization observed by us is a robust and general phenomenon, existing in all three lattice models for a broad range of filling factors and interaction parameters. The shape of the resulting WCs is determined by the boundary conditions of the chosen plaquette. It is to a large extent independent on the underlying lattice, including its topology, and follows the behavior of classical point particles.Article Citation - WoS: 39Citation - Scopus: 39Polarized Emission From Cspbbr3 Nanowire Embedded-Electrospun Pu Fibers(IOP Publishing Ltd., 2018) Güner, Tuğrul; Topçu, Gökhan; Savacı, Umut; Genç, Aziz; Sarı, Emre; Demir, Mustafa MuammerInterest in all-inorganic halide perovskites has been increasing dramatically due to their high quantum yield, band gap tunability, and ease of fabrication in compositional and geometric diversity. In this study, we synthesized several hundreds of nanometer long and ∼4 nm thick CsPbBr3 nanowires (NWs). They were then integrated into electrospun polyurethane (PU) fibers to examine the polarization behavior of the composite fiber assembly. Aligned electrospun fibers containing CsPbBr3 NWs showed a remarkable increase in the degree of polarization from 0.17-0.30. This combination of NWs and PU fibers provides a promising composite material for various applications such as optoelectronic devices and solar cells.Article Citation - WoS: 7Citation - Scopus: 8Hydrogenation-driven phase transition in single-layer TiSe2(IOP Publishing Ltd., 2017) İyikanat, Fadıl; Kandemir, Ali; Özaydın, H. Duygu; Senger, Ramazan Tuğrul; Şahin, HasanFirst-principles calculations based on density-functional theory are used to investigate the effects of hydrogenation on the structural, vibrational, thermal and electronic properties of the charge density wave (CDW) phase of single-layer TiSe2. It is found that hydrogenation of single-layer TiSe2 is possible through adsorption of a H atom on each Se site. Our total energy and phonon calculations reveal that a structural phase transition occurs from the CDW phase to the T d phase upon full hydrogenation. Fully hydrogenated TiSe2 presents a direct gap semiconducting behavior with a band gap of 119 meV. Full hydrogenation also leads to a significant decrease in the heat capacity of single-layer TiSe2.Article Citation - WoS: 21Citation - Scopus: 22Investigation of Electron Beam Lithography Effects on Metal-Insulator Transition Behavior of Vanadium Dioxide(IOP Publishing Ltd., 2017) Yüce, Hürriyet; Alaboz, Hakan; Demirhan, Yasemin; Özdemir, M.; Özyüzer, Lütfi; Aygün, GülnurVanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.Article Citation - WoS: 6Citation - Scopus: 6Few-Layer Mos2 as Nitrogen Protective Barrier(IOP Publishing Ltd., 2017) Akbalı, Barış; Yanılmaz, Alper; Tomak, Aysel; Tongay, Sefaattin; Çelebi, Cem; Şahin, HasanWe report experimental and theoretical investigations of the observed barrier behavior of few-layer MoS2 against nitrogenation. Owing to its low-strength shearing, low friction coefficient, and high lubricity, MoS2 exhibits the demeanor of a natural N-resistant coating material. Raman spectroscopy is done to determine the coating capability of MoS2 on graphene. Surface morphology of our MoS2/graphene heterostructure is characterized by using optical microscopy, scanning electron microscopy, and atomic force microscopy. In addition, density functional theory-based calculations are performed to understand the energy barrier performance of MoS2 against nitrogenation. The penetration of nitrogen atoms through a defect-free MoS2 layer is prevented by a very high vertical diffusion barrier, indicating that MoS2 can serve as a protective layer for the nitrogenation of graphene. Our experimental and theoretical results show that MoS2 material can be used both as an efficient nanocoating material and as a nanoscale mask for selective nitrogenation of graphene layer.