Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 4Citation - Scopus: 4Polymer-Bonded Cdte Quantum Dot-Nitroxide Radical Nanoprobes for Fluorescent Sensors(Springer, 2022) Karabıyık, Merve; Ebil, ÖzgençA novel functional polymer-bonded quantum dots (QDs)-nitroxide radical complex was demonstrated. In the first part of the study, the synthesis of polymer thin films via initiated chemical vapor deposition (iCVD), functionalization of polymer thin films with amine functional groups, and attachment of QDs to polymer surface were demonstrated. Fourier transform infrared spectroscopy and energy-dispersive X-ray spectroscopy together with fluorescence spectroscopy studies revealed that aliphatic primary amine (propylamine) was very effective for the functionalization of iCVD deposited poly(glycidyl methacrylate) (pGMA) and its copolymer with diethylaminoethyl methacrylate (p(GMA-co-DEAEMA)) and also QD attachment to functionalized polymer surface. In the second part of the study, the synthesis and attachment of Quantum Dot-4Amino TEMPO (QD-4AT) nanoprobes to functionalized pGMA thin films and feasibility of using them as fluorescent sensor structures were investigated. It was found that high initial 4AT concentration and long (24 h) interaction times are beneficial for nanoprobe synthesis. Electron paramagnetic resonance (EPR) spectroscopy analysis revealed the existence of covalent bond between QD and 4AT when 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide was used during synthesis. EPR analysis together with fluorescence microscopy investigation confirmed the successful attachment of nanoprobes to polymer surface. Time-depended fluorescence quenching analysis revealed that more than 50% reduction in fluorescence intensity within 15 min demonstrating the potential of polymer bonded QD-4AT nanoprobes in various sensor applications.Article Citation - WoS: 6Citation - Scopus: 10Effect of Annealing on the Density of Defects in Epitaxial Cdte (211)/Gaas(Springer, 2018) Bakali, Emine; Selamet, Yusuf; Tarhan, EnverCdTe thin films were grown on GaAs (211) wafers by molecular beam epitaxy as the buffer layer for HgCdTe infrared detector applications. We studied the effect of annealing on the density of dislocation of these CdTe thin films under varying annealing parameters such as annealing temperature, annealing duration, and number of cycles. Annealings were carried out using a homemade annealing reactor possessing a special heater element made of a Si wafer for rapid heating. The density of dislocations, which were made observable with a scanning electron microscope after etching with an Everson solution, were calculated by counting the number of dislocations per unit surface area, hence the term etch pit density (EPD). We were able to decrease EPD values by one order of magnitude after annealing. For example, the best EPD value after a 20-min annealing at 400°C was ∼ 2 × 107 cm−2 for a 1.63-μm CdTe thin film which was about 9.5 × 107 cm−2 before annealing. We also employed Raman scattering measurements to see the changes in the structural quality of the samples. From the Raman measurements, we were able to see improvements in the quality of our samples from the annealing by studying the ratio of 2LO/LO phonon mode Raman intensities. We also observed a clear decrease in the intensity of Te precipitations-related modes, indicating a decrease in the size and number of these precipitations.