Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

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  • Article
    Citation - WoS: 24
    Citation - Scopus: 23
    Photovoltaic Performance of Magnetron Sputtered Antimony Selenide Thin Film Solar Cells Buffered by Cadmium Sulfide and Cadmium Sulfide /Zinc Sulfide
    (Elsevier B.V., 2023) Cantas, A.; Gundogan, S.H.; Turkoglu, F.; Koseoglu, H.; Aygun, G.; Ozyuzer, L.
    Antimony selenide (Sb2Se3)-based thin-film solar cells have recently attracted worldwide attention as an abundant, low-cost, and efficient photovoltaic technology. The highest efficiencies recorded for Sb2Se3 solar cells have been obtained using cadmium sulfide (CdS) as a buffer layer. The Cd-included hybrid buffer layers could be one option to increase device efficiency through more effective usage of light. Therefore, in this work, the effect of single CdS and hybrid CdS/zinc sulfide (ZnS) buffer layers on the photovoltaic performance of Sb2Se3 thin-film solar cells has been investigated in detail. Sb2Se3 thin films have been deposited on molybdenum (Mo)-coated soda-lime glass (SLG) substrates by radio frequency magnetron sputtering technique followed by a post-heat treatment process. The morphological, and structural properties of Sb2Se3 thin films have been investigated by X-Ray Diffraction and Scanning Electron Microscopy. To compare the device performances of single CdS and hybrid CdS/ZnS buffered Sb2Se3 thin-film solar cells, SLG/Mo/Sb2Se3/CdS/ZnS/indium tin oxide (ITO) and SLG/Mo/Sb2Se3/CdS/ITO structures have been fabricated. The findings of this study have revealed a reduction in solar cells’ performance from η=3.93% for CdS buffer to η=0.13% for CdS/ZnS hybrid buffer. The change in the solar cell performance using the CdS/ZnS hybrid buffer has been discussed in detail. © 2023 Elsevier B.V.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Origin of a Localized Vibrational Mode in a Gasb Substrate With a Mbe-Grown Znte Epilayer
    (IOP Publishing Ltd., 2006) Kim, Hyunjung; Tarhan, Enver; Chen, G.; Ramdas, A. K.; Sciacca, M. D.; Gunshor, R. L.
    A localized vibrational mode (LVM) with a remarkable fine structure is observed in the infrared transmission spectrum of a ZnTe epilayer grown with molecular beam epitaxy (MBE) on a GaSb substrate. On the basis of the Zn and Te deposited on the GaSb substrate during the MBE growth of ZnTe, and assuming diffusion of Zn and Te into GaSb, the LVM is attributed to Zn, substitutionally replacing either the cation, Ga (ZnGa), or the anion, Sb (Zn Sb). The frequency of the LVM and its fine structure can then be interpreted in terms of the infrared active modes of 64Zn substituting for Sb as an anti-site impurity and treating the centre as an XY4 quasimolecule. With X≡64Zn and Y≡ 69Ga and 71Ga, occupying the nearest-neighbour sites reflecting all the possible combinations and permutations as well as the natural isotopic abundance of Ga, the fine structure of the LVM can be accounted for quantitatively.