Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Subject: search.filters.subject.Heat capacity

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 9
    Polymeric Thermal Analysis of C+h and C+h+ar Ion Implanted Uhmwpe Samples
    (Elsevier Ltd., 2007) Kaya, N.; Öztarhan, Ahmet M.; Urkaç, Emel Sokullu; Ila, D.; Budak, S.; Oks, E.; Tıhmınlıoğlu, Funda; Muntele, C.
    Chemical surface characterization of C + H hybrid ion implanted UHMWPE samples were carried out using DSC (differential scanning calorimeter) and TGA (thermal gravimetric analysis) techniques. Samples were implanted with a fluence of 10(17) ion/cm(2) and an extraction voltage of 30 kV. The study of TGA and DSC curves showed that: (1) Polymeric decomposition temperature increased, (2) T-m, Delta C-p and Delta H-m values changed while Delta C-p and Delta H-m increased. T-g value could not be measured, because of some experimental limitations. However, the increase in Delta H-m values showed that T-g values increased, (3) the branch density which indicated the increase in number of cross-link (M-c) decreased in ion implanted samples and (4) increase in Delta H-m values indicated increase in crystallinity of implanted surface of UHMWPE samples.
  • Article
    Citation - WoS: 7
    Citation - Scopus: 8
    Hydrogenation-driven phase transition in single-layer TiSe2
    (IOP Publishing Ltd., 2017) İyikanat, Fadıl; Kandemir, Ali; Özaydın, H. Duygu; Senger, Ramazan Tuğrul; Şahin, Hasan
    First-principles calculations based on density-functional theory are used to investigate the effects of hydrogenation on the structural, vibrational, thermal and electronic properties of the charge density wave (CDW) phase of single-layer TiSe2. It is found that hydrogenation of single-layer TiSe2 is possible through adsorption of a H atom on each Se site. Our total energy and phonon calculations reveal that a structural phase transition occurs from the CDW phase to the T d phase upon full hydrogenation. Fully hydrogenated TiSe2 presents a direct gap semiconducting behavior with a band gap of 119 meV. Full hydrogenation also leads to a significant decrease in the heat capacity of single-layer TiSe2.