Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Time-Resolved Stokes Polarization Analysis of Single Photon Emitters in Hexagonal Boron Nitride(American Chemical Society, 2025) Ateş, Serkan; Ateş, S.; 01. Izmir Institute of Technology; 04. Faculty of Science; 04.05. Department of PyhsicsSolid-state quantum emitters are pivotal to the advancement of quantum technologies, particularly in quantum computation and communication, where the polarization of single photons serves as a key information carrier. Precise characterization of polarization is essential for understanding the underlying dynamics and minimizing polarization-related errors in emitter design. In this study, we employ the Rotating Quarter-Wave Plate (RQWP) method to perform comprehensive polarization analysis of quantum emitters in hexagonal boron nitride (hBN). By capturing both time-averaged and time-resolved polarization characteristics, we present the first demonstration of dynamic Stokes parameter evolution from single-photon emitters in hBN. Our work demonstrates a powerful method for revealing complex polarization dynamics that were previously inaccessible and provides new insights into the behavior of solid-state quantum emitters. The methods introduced here are broadly applicable to polarization studies across a range of solid-state quantum systems. © 2025 Elsevier B.V., All rights reserved.Article Citation - WoS: 2Citation - Scopus: 2Temperature-Dependent Spectral Properties of Hexagonal Boron Nitride Color Centers(Amer Chemical Soc, 2025) Çakır, Özgür; Polat, Nahit; Ateş, Serkan; Cakir, Ozgur; Ates, Serkan; 04.04. Department of Photonics; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyColor centers in hexagonal boron nitride (hBN) are emerging as a mature platform for single-photon sources in quantum technology applications. In this study, we investigate the temperature-dependent spectral properties of a single defect in hBN to understand the dominant dephasing mechanisms due to phonons. We observe a sharp zero-phonon line (ZPL) emission accompanied by Stokes and anti-Stokes optical phonon sidebands assisted by the Raman-active low-energy (approximate to 6.5 meV) interlayer shear mode of hBN. The shape of the spectral lines around the ZPL is measured down to 78 K, at which the line width of the ZPL is measured as 211 mu eV. Using a quadratic electron-phonon interaction, the temperature-dependent broadening and the lineshift of the ZPL are found to follow a temperature dependence of T + T 5 and T + T 3, respectively. Furthermore, the temperature-dependent line shape around the ZPL at low-temperature conditions is modeled with a linear electron-phonon coupling theory, which results in a 0 K Debye-Waller factor of the ZPL emission as 0.59. Our results provide insights into the underlying mechanisms of electron-phonon coupling in hBN, which is critical to enhance their potential for applications in quantum technologies.Article Citation - WoS: 14Citation - Scopus: 14Quantum Optics Applications of Hexagonal Boron Nitride Defects(Wiley-v C H verlag Gmbh, 2025) Ateş, Serkan; Cholsuk, Chanaprom; Gale, Angus; Kianinia, Mehran; Pacal, Serkan; Ates, Serkan; Vogl, Tobias; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyHexagonal boron nitride (hBN) has emerged as a compelling platform for both classical and quantum technologies. In particular, the past decade has witnessed a surge of novel ideas and developments, which may be overwhelming for newcomers to the field. This review provides an overview of the fundamental concepts and key applications of hBN, including quantum sensing, quantum key distribution, quantum computing, and quantum memory. Additionally, critical experimental and theoretical advances that have expanded the capabilities of hBN are highlighted, in a cohesive and accessible manner. The objective is to equip readers with a comprehensive understanding of the diverse applications of hBN, and provide insights into ongoing research efforts.
