Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Subject: search.filters.subject.NanocrystalsWoS Q: search.filters.wosQuartile.Q3

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  • Article
    Citation - WoS: 9
    Citation - Scopus: 18
    Improvement of Photophysical Properties of Cspbbr3 and Mn2+:cspb(br,cl)(3) Perovskite Nanocrystals by Sr2+ Doping for White Light-Emitting Diodes
    (American Chemical Society, 2022) Yüce, Hürriyet; Mandal, Mukunda; Yalçınkaya, Yenal; Andrienko, Denis; Demir, Mustafa Muammer
    All-inorganic metal halide perovskite nanocrystals (NCs) having the general formula ABX(3), where A is a monovalent cation, for example, Cs+, B is a divalent cation, typically Pb2+, and X is Cl-, Br-, I-, or their binary mixture, show potential in optoelectronic devices. In this work, we explore the effect of B-site doping on the optoelectronic properties of CsPbX3 NCs (X = Br, Cl). First, the Pb2+ ions in the pristine CsPbBr3 NC are partially substituted by Mn2+ ions. The alkaline earth metal strontium is then doped on both pristine and the Mn2+-substituted NCs. We found that a small percentage of Sr2+ doping remarkably improves the photoluminescence quantum yield of CsPbBr3 and Mn2+-state emission in Mn2+:CsPb(Br,Cl)(3) NCs. Perovskite NC film/ poly(methyl methacrylate) composites with all four NC variants were used in a white light-emitting diode (WLED), where Sr2+ doping increased the luminous efficiency of the WLED by similar to 4.7%. We attribute this performance enhancement to a reduced defect density and an attenuated microstrain in the local NC structure.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 3
    1-Octanol Is a Functional Impurity Modifying Particle Size and Photophysical Properties of Colloidal Zncdsse/Zns Nanocrystals
    (American Chemical Society, 2021) Sevim Ünlütürk, Seçil; Çağır, Ali; Varlıklı, Canan; Özçelik, Serdar
    Impurities in trioctylphophine (TOP) strongly affect nanocrystal synthesis. 1-Octanol among other contaminants in TOP is identified for the first time as a functional impurity by H-1 NMR. The deliberate addition of 1-octanol into trioctylphosphine reduced particle size and modified photophysical properties of ZnCdSSe/ZnS colloidal nanocrystals. NMR analysis furthermore revealed that 1-octanol is bonded to the nanocrystal surfaces. The ratio of integrals for the O-CH2 protons of 1-octanol, which is the lowest compared to the other ligands, suggests that 1-octanol plays a critical role to tune the particle size of nanocrystals. The increased amount of 1-octanol added into TOP reduces the particle size from 9.8 to 7.2 nm, causing a progressive blue shift in the UV-vis and PL spectra but leaving the alloy composition unaffected. The rate of nonradiative processes is enhanced with the amount of 1-octanol added into TOP, correlating with higher dislocation density observed in the nanocrystals. As a conclusion, 1-octanol is proposed as a functional impurity that varies particle size and nonradiative photophysical processes in the ZnCdSSe/ZnS colloidal nanocrystals.
  • Article
    Citation - WoS: 12
    Citation - Scopus: 12
    Ge Nanocrystals Embedded in Sio2 in Mos Based Radiation Sensors
    (Elsevier Ltd., 2010) Aktağ, Aliekber; Yılmaz, Ercan; Mogaddam, Nader A.P.; Aygün, Gülnur; Cantaş, Ayten; Turan, Raşit
    In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements. The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation. The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2. The gamma radiation effects from 500 up to 4000 Gray were investigated. Capacitance-voltage measurements were performed and analyzed. Oxide traps and interface trap charges were calculated. Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors, especially at high radiation doses. © 2010 Elsevier B.V. All rights reserved.