Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 6Citation - Scopus: 6Weak Dependence of Voltage Amplification in a Semiconductor Channel on Strain State and Thickness of a Multidomain Ferroelectric in a Bilayer Gate(American Chemical Society, 2023) Okatan, Mahmut Barış; Yapici, M.K.; Sendur, K.; Okatan, M.B.; 01. Izmir Institute of Technology; 03.09. Department of Materials Science and Engineering; 03. Faculty of EngineeringFerroelectric/dielectric layered stacks are of special interest as gate oxides in the pursuit of designing low-power transistors, where the electrostatics of such stacks are thought to provide a means to allow for voltage amplification in the semiconductor channel. Strain and thickness dependence of the response of such a gate stack in relation to voltage amplification in a semiconductor channel becomes important to identify, which is what we study in this work using a thermodynamic approach. For a ferroelectric multidomain state as the stable phase in the stack, our findings show that a limited magnitude of voltage amplification appears to be feasible. Voltage amplification at the semiconductor surface is computed to hardly exceed 1.2 in thick bilayers (40 nm) for strains stabilizing the multidomain state and attains even less than this value for the thinner stacks. © 2023 American Chemical Society.Article Citation - WoS: 10Citation - Scopus: 11Behavior of Al4c3 Particles During Flotation and Sedimentation in Aluminum Melts(Springer, 2021) Gökelma, Mertol; Gökelma, Mertol; Maier, Juergen; Renkel, Maria F.; Ekstrom, Kai Erik; Friedrich, Bernd; Tranell, Gabriella; 03.09. Department of Materials Science and Engineering; 03. Faculty of Engineering; 01. Izmir Institute of TechnologyAl4C3 particles form during the primary production of aluminum via molten salt electrolysis due to the carbon solubility and direct contact between bath, metal, and carbon anodes. Additional Al4C3 may form during melt processing through direct contact between the melt and carbonaceous materials. As a result of their small size and similar density to aluminum, removal of aluminum carbide particles can be challenging. If not removed, carbides can produce inclusion defects or poor surface condition in aluminum products. The current work studies the removal and behavior of Al4C3 particles during flotation with different gas mixtures, as well as sedimentation. The interaction between carbide particles and Al2O3 films during the melt treatment processes was also studied and reported. Factsage thermochemical software was used to model the interactions at the interface of inclusions and bubbles covered by films. The highest degree of carbide removal was obtained after flotation with an H2O-containing argon gas mixture, where the carbide concentration dropped below the measured solubility limit of carbon at the corresponding temperature. Strong interaction between Al4C3 particles and Al2O3 films was observed during sedimentation which worked as an efficient removal method for the particles. Oxidation of carbides and formation of oxycarbides were suggested as the mechanisms promoting the attachment of carbides on oxide films.Conference Object Citation - WoS: 2Citation - Scopus: 1Determination of Aluminum Oxide Thickness on the Annealed Surface of 8000 Series Aluminum Foil by Fourier Transform Infrared Spectroscopy(Springer, 2017) İnanç Uçar, Özlem; Özdemir, Durmuş; Ekin Meşe, Ayten; Birbaşar, Onur; Dündar, Murat; Özdemir, Durmuş; 04.01. Department of Chemistry; 04. Faculty of Science; 01. Izmir Institute of TechnologyAluminum foil produced with prescribed thermomechanical processing route develop oxide film. Alloy chemistry and annealing practices, particularly its duration and exposed temperature, determine the characteristics of the oxide film. The magnitude and characteristics of the oxide film may impair surface features leading to serious problems in some applications, such as coating, printing and in some severe cases failure in formability. Therefore, it is important for the rolling industry to be able to monitor the oxide formation on the foil products and quantify its thickness. Well known methods to measure an oxide thickness that is in the order of nanometer, require meticulous sample preparation techniques, long duration for measurements and sophisticated equipment. However, in this study, a simple and rapid grazing angle attenuated total reflectance infrared (GA-ATR-FTIR) spectroscopic method combined with chemometrics multivariate calibration has been developed for the oxide thickness determination which is validated with x-ray photoelectron spectroscopy (XPS). 3000 and 8000 series aluminum foil materials which were produced by twin roll casting technique were used in this study. Foil samples were annealed at various different temperatures and annealing times in a laboratory scale furnace. Immediately after collecting GA-ATR-FTIR spectra, the 3000 series alloy samples were sent to a laboratory where XPS reference oxide thickness measurements had been performed. Partial Least Squares (PLS) method was used to develop a multivariate calibration model based on FTIR spectra and XPS reference oxide thickness values in order to predict the aluminum oxide thickness. The correlation coefficient of XPS reference oxide thickness values versus grazing angle ATR-FTIR based PLS predicted values was found as 0.9903 the standard error of cross validation (SECV) was found to be 0.29 nm in range of 4.9–14.0 nm for Al2O3. In addition, the standard error of prediction (SEP) for the validation set was 0.24 nm with the model generated with three principal components (PCs). © The Minerals, Metals & Materials Society 2017.Article Citation - WoS: 16Citation - Scopus: 18Study of Undoped and Indium Doped Zno Thin Films Deposited by Sol Gel Method(Springer Verlag, 2018) Medjaldi, M.; Özyüzer, Lütfi; Boudine, B.; Zaabat, M.; Halimi, O.; Sebais, M.; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films prepared by the sol–gel method through the dip coating technique. X-ray diffraction (XRD) analysis indicates that all ZnO thin films have a polycrystalline nature with a hexagonal wurtzite phase with (002) as a preferential orientation. XRD results demonstrate that the particle size of ZnO decreased with the increase in Indium concentrations. Raman scattering spectra confirmed the wurtzite phase and the presence of intrinsic defects in our samples. Energy dispersive spectroscopy (EDS) and the X-ray photoelectron spectroscopy (XPS) measurements, confirmed the presence of zinc, oxygen and indium elements which is in agreement with XPS results. The photoluminescence (PL) spectra of the films exhibit defects-related visible emission peaks, with intensities differing owing to different concentrations of zinc vacancies. UV–Vis spectrometer measurements show that all the films are highly transparent in the visible wavelength region (≥ 70%) and presented two different absorption edges at about 3.21 eV and 3.7 eV, these may be correspond to the band gap of zinc oxide and indium oxide respectively.Article Citation - WoS: 7Citation - Scopus: 7Comparative Study of Annealing and Gold Dopant Effect on Dc Sputtered Vanadium Oxide Films for Bolometer Applications(Springer Verlag, 2017) Özyüzer, Lütfi; Demirhan, Yasemin; Yüce, Hürriyet; Yüce, Hürriyet; Özyüzer, Lütfi; Aygün, Gülnur; Demirhan, Yasemin; 04.05. Department of Pyhsics; 03.09. Department of Materials Science and Engineering; 03. Faculty of Engineering; 04. Faculty of Science; 01. Izmir Institute of TechnologyVanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.Article Citation - WoS: 18Citation - Scopus: 20Impact of Incorporated Oxygen Quantity on Optical, Structural and Dielectric Properties of Reactive Magnetron Sputter Grown High-? Hfo2/Hf Thin Film(Elsevier Ltd., 2014) Cantaş, Ayten; Aygün, Gülnur; Aygün, Gülnur; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyHigh-κ hafnium-oxide thin films have been fabricated by radio frequency (rf) reactive magnetron sputtering technique. To avoid formation of an undesired interfacial suboxide layer between Si and high-κ film, prior to HfO2 deposition, a thin Hf buffer layer was deposited on p-type (1 0 0) Si substrate at room temperature. Effect of oxygen gas quantity in the O2/Ar gas mixture was studied for the optical and structural properties of grown HfO2 high-κ thin films. The grown thin oxide films were characterized optically using spectroscopic ellipsometer (SE) in detail. Crystal structure was studied by grazing incidence X-ray diffractometer (GIXRD) technique, while bonding structure was obtained by Fourier transform infrared spectroscopy (FTIR) analyses. In agreement with GIXRD and FTIR analyses, SE results show that any increment above ideal quantity of oxygen content in the gas mixture resulted in decrements in the refractive index and thickness of HfO2 dielectric film, while increments in SiO2 thickness. It is apparent from experimental results that oxygen to argon gas ratio needs to be smaller than 0.2 for a good film quality. The superior structural and optical properties for grown oxide film were obtained for O2/Ar gas ratio of about 0.05-0.1 combined with ∼30 W constant rf sputtering power. © 2014 Elsevier B.V. All rights reserved.Article Citation - WoS: 24Citation - Scopus: 24Electrical and Dielectrical Properties of Tantalum Oxide Films Grown by Nd:yag Laser Assisted Oxidation(Elsevier Ltd., 2008) Aygün, Gülnur; Aygün, Gülnur; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyTantalum pentoxide (Ta2O5) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, dielectric and electrical properties of laser grown oxide layers have been studied. The effect of the sputtered Ta film thickness, laser beam energy density and the substrate temperature on the final Ta2O5 film structure has been determined. It is shown that the oxide layers obtained for the laser beam energy density in the range from 3.26 to 3.31 J/cm2 and the substrate temperature around 350 °C have superior properties. FTIR measurement demonstrates that the Ta2O5 layers are obtained with the laser assisted oxidation technique. Metal Oxide Semiconductor capacitors fabricated on the grown oxide layers exhibits typical Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. However, the density of oxide charges is found to be slightly higher than the typical values of thermally grown oxides. The conduction mechanism studied by Current-Voltage measurements of the capacitors indicated that the current flow through the oxide layer is modified Poole-Frenkel type. It is concluded that the Ta2O5 films formed by the technique of Nd:YAG laser-enhanced oxidation at relatively low substrate temperatures are potentially useful for device applications and their properties can be further improved by post oxidation annealing processes. © 2008 Elsevier B.V