Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Conference Object Spin Polarized Tunneling in Large Area Mesas of Superconducting Bi 2sr2cacu2o8+δ for the Generation of the Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Türkoğlu, Fulya; Şimşek, Yılmaz; Köseoğlu, Hasan; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiRectangular intrinsic Josephson junction mesa structures of superconducting Bi2Sr2CaCu2O8+delta (Bi2212) can be used as a source of continuous, coherent and polarized terahertz (THz) radiation. THz emitting mesas are below a certain underdoped level of Bi2212. They have small Josephson critical current in contrast to optimally doped and overdoped Bi2212. We deposited Au/Co/Au multilayer top of mesa and obtained small critical current from mesas fabricated by as-grown Bi2212 single crystals due to injection of spin polarized current. The spin injection eliminates adjustment of doping level for successful THz emission.Conference Object Reactive Ion Beam Etching of Superconducting Bi2212 by Ta/Pr and Pr'/ta/pr Masks for the Generation of Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Köseoğlu, Hasan; Türkoğlu, Fulya; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (Ills) of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) may require mesas with large lateral dimension. However, there are difficulties in fabrication of perfect rectangular mesas. Mesa lateral angles should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. Since thick photoresist (PR) layer shades the lateral dimension of mesa during ion beam etching, we patterned Ta/PR and PR'/Ta/PR masks on Bi2212 and used selective ion etching to overcome this problem. The reactive ion beam etchings have done with ion beam of Ar, N(2) and O(2) and we have obtained mesas about 1 mu m with lateral angle of approximately 50 to 75 degrees which is better than the mesas fabricated with single layer mask.Conference Object Fabrication of Double Mesa Structures by E-Beam Lithography From High Temperature Superconducting Bi2sr2cacu2o 8+? (bi2212) for Powerful Terahertz Emission(Institute of Electrical and Electronics Engineers Inc., 2011) Demirhan, Yasemin; Türkoğlu, Fulya; Köseoğlu, Hasan; Minematsu, M.; Araki, H.; Miyakawa, Nobuaki; Özyüzer, LütfiWe work on a frequency tunable solid state device to meet the needs of continuous, coherent, powerful terahertz emission sources that fill practically important terahertz gap. High temperature superconducting (HTS) coherently oscillating Josephson junctions in Bi2Sr2CaCu 2O8+δ (Bi2212) crystal make this approach very promising. Since doping dependence of Bi2212 is an important parameter, Bi2212 crystals are annealed in vacuum or purified argon gas flow at 425°C. For further processing we pattern both single and double rectangular mesa structures by using electron beam lithography on the cleaved surface of the crystal. Resistance-temperature (R-T), and current-voltage behavior (I-V) measurements achieved. © 2011 IEEE.Conference Object Terahertz Wave Emission From Layered Superconductors: Interferometer Measurements(Institute of Electrical and Electronics Engineers Inc., 2011) Özyüzer, Lütfi; Türkoğlu, Fulya; Demirhan, Yasemin; Köseoğlu, Hasan; Preu, S.; Ploss, D.; Malzer, S.; Şimşek, Yılmaz; Wang, Huabing; Müller, P.Rectangular Bi2Sr2CaCu2O 8+δ (Bi2212) mesa structures were fabricated on as-grown Bi2212 single crystal superconductors using standard photolithography and Ar ion beam etching techniques. We have performed c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometer measurements. Furthermore, in contrast to previous studies, the emission frequency was determined using interferometer set up instead of FTIR. The interference patterns were detected outside the cryostat after traveling long way through ambient space. The emission frequency calculated by Fourier transform of interference data is consistent with Josephson frequency-voltage relation. © 2011 IEEE.Conference Object Citation - WoS: 36Citation - Scopus: 40Thermal Management in Large Bi2212 Mesas Used for Terahertz Sources(Institute of Electrical and Electronics Engineers Inc., 2009) Kurter, Cihan; Gray, Kenneth E.; Zasadzinski, John F.; Özyüzer, Lütfi; Koshelev, A. E.; Li, Q.; Yamamoto, T.; Kadowaki, K.; Kwok, W. K.; Tachiki, M.; Welp, U.We present a thermal analysis of a patterned mesa on a Bi 2Sr2CaCu2O8 (Bi2212) single crystal that is based on tunneling characteristics of the c-axis stack of ∼800 intrinsic Josephson junctions in the mesa. Despite the large mesa volume (e.g., 40 × 300 × 1.2 μm3) and power dissipation that result in self-heating and backbending of the current-voltage curve (I-V), there are accessible bias conditions for which significant polarized THz-wave emission can be observed. We estimate the mesa temperature by equating the quasiparticle resistance, Rqp(T), to the ratio V/I over the entire I-V including the backbending region. These temperatures are used to predict the unpolarized black-body radiation reaching our bolometer and there is substantial agreement over the entire I-V. As such, backbending results from the particular R qp (T) for Bi2212, as first discussed by Fenton, rather than a significant suppression of the energy gap. This model also correctly predicts the observed disappearance of backbending above ∼60 K.Conference Object Citation - WoS: 2Citation - Scopus: 2Spin Polarized Current Injection Through Hgbr2 Intercalated Bi2212 Intrinsic Josephson Junctions(Institute of Electrical and Electronics Engineers Inc., 2007) Özyüzer, Lütfi; Kurter, Cihan; Özdemir, Mustafa; Zasadzinski, John F.; Gray, Kenneth E.; Hinks, David G.To investigate the effect of polarized current on tunneling characteristics of intrinsic Josephson junctions (IJJs), spin-polarized and spin-degenerate current have been injected through the c-axis of HgBr2 intercalated Bi2.1Sr1.5Ca1.4Cu2O 8+δ (Bi2212) single crystals on which 10 × 10 μm 2 mesas have been fabricated. These two spin conditions are achieved by depositing either Au (15 nm)/Co (80 nm)/Au (156 nm) multilayers or single Au film on HgBr2 intercalated Bi2212 with Tc = 74 K followed by photolithography and Ar ion beam etching. The I-V characteristics have been measured with and without a magnetic field parallel to c-axis at 4.2 K. A fine, soft Au wire is used to make a gentle mechanical contact on the top of a particular mesa in the array. Tunneling conductance characteristics were obtained and the magnetic field dependence of sumgap voltage peaks was investigated. These peaks do not change in position with increasing magnetic field for both contact configurations. In addition, the temperature dependence of tunneling characteristics of the IJJs are obtained and existence of pseudogap feature is observed above Tc for HgBr2 intercalated Bi2212.Conference Object Citation - WoS: 3Citation - Scopus: 3Low-Field Behavior of Ti-Added Mgb2/Cu Superconducting Wires(Institute of Electrical and Electronics Engineers Inc., 2005) Gençer, Ali; Kılıç, Ahmet; Okur, Salih; Güçlü, Nusret; Özyüzer, Lütfi; Belenli, İbrahimWe report on low-field magnetic properties of Ti-added (0-20 wt.% of Ti) Cu-clad MgB2 superconducting wires. Wires were produced by mixing appropriate amount of Ti and reacted MgB2 powder which was then placed inside Cu tubes with a diameter of 6 mm. The tubes were then cold worked by rolling or drawing to smaller diameters and then annealed at various temperatures to enhance the grain connectivity. XRD studies show that Ti addition results in new but minor phases. We have then measured ac susceptibilities in the temperature range between 20 K and 40 K in ac fields of 20-1600 A/m. The data show that an additional loss mechanism is established with Ti-addition. The calculated ac losses are increasing with increasing Ti-content in the main superconducting matrix.Conference Object Citation - WoS: 4Citation - Scopus: 4Probing the Phase Diagram of Bi2sr2cacu 2o8+? With Tunneling Spectroscopy(Institute of Electrical and Electronics Engineers Inc., 2003) Özyüzer, Lütfi; Zasadzinski, John F.; Gray, Kenneth E.; Hinks, David G.; Miyakawa, NobuakiTunneling measurements are performed on Ca-rich single crystals of Bi 2Sr2CaCu2O8+δ (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined quasiparticle peaks, robust dip and hump features and in some cases Josephson currents. The doping dependence of tunneling conductances of Ca-rich Bi2212 are analyzed and compared to stoichiometric Bi2212. A similar profile of energy gap vs. doping concentration is found although the Ca-rich samples have a slighly smaller optimum Tc and therefore smaller gap values for any doping level. The evolution of tunneling conductance peak height to background ratios with hole concentration are compared. For a given doping level, the Ca-rich spectra showed more broadened features compared to the stoichiometric counterparts, most likely due to increased disorder from the excess Ca. Comparison of the dip and hump features has provided some potential insights into their origins.Article Citation - WoS: 4Citation - Scopus: 4Simultaneous Quasiparticle and Josephson Tunneling in Bscco-2212 Break Junctions(Institute of Electrical and Electronics Engineers Inc., 1999) Özyüzer, Lütfi; Miyakawa, Nobuaki; Zasadzinski, John F.; Yusof, Zikri M.; Romano, Pierom; Kendziora, Christopher A.; Hinks, David G.; Gray, Kenneth E.Tunneling measurements are reported for superconductor-insulator-superconductor (SIS) break junctions on underdoped, optimally-doped, and overdoped single crystals of tSrsCaCiOs-).,! (Bi2212). The junction I -V characteristics exhibit welldefined quasiparticle current jumps at eV = 2A as well as hysteretic Josephson currents. The quasiparticle branch has been analyzed in the framework of dxa_y2 (d-wave) superconductivity and indicates that there is preferential tunneling along the lobe directions of the d-wave gap. For overdoped Bi-2212 with TC-62 K, the Josephson current is measured as a function of junction resistance, Rn, which varied by two orders of magnitude (1 kO to 100 kO). IcRn product is proportional to the 0.47 power of /c and displays a maximum of 7.0 mV. When the hole doping is decreased from overdoped (Tc=62 K) to the underdoped regime (Tc=70 K), the average IcRn product increases as does the quasiparticle gap. The maximum IcRn is ~ 40% of the A/e at each doping level, with a value as high as 25 mV in underdoped Bi-2212.