Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 56Citation - Scopus: 62Cross-like terahertz metamaterial absorber for sensing applications(Springer Verlag, 2018) Sabah, Cumali; Mulla, Batuhan; Altan, Hakan; Özyüzer, LütfiIn this work, a new multiband terahertz metamaterial absorber is designed and characterised by numerical simulation method. In addition, the utilisation of the proposed absorber as a sensor is also investigated. The dielectric and thickness sensing characteristics are analysed. The proposed multiband metamaterial absorber has the ability for utilising the terahertz region up to 2 THz. According to the results, it is found that the proposed absorber is capable of sensing unknown materials and material thickness with any of its five absorption bands. The sensitivity of the proposed sensor is 6.57 GHz / unit sensitivity for dielectric sensing and 7.66GHz/μm for thickness sensing.Article Citation - WoS: 16Citation - Scopus: 18Study of Undoped and Indium Doped Zno Thin Films Deposited by Sol Gel Method(Springer Verlag, 2018) Medjaldi, M.; Touil, O.; Boudine, B.; Zaabat, M.; Halimi, O.; Sebais, M.; Özyüzer, LütfiIn this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films prepared by the sol–gel method through the dip coating technique. X-ray diffraction (XRD) analysis indicates that all ZnO thin films have a polycrystalline nature with a hexagonal wurtzite phase with (002) as a preferential orientation. XRD results demonstrate that the particle size of ZnO decreased with the increase in Indium concentrations. Raman scattering spectra confirmed the wurtzite phase and the presence of intrinsic defects in our samples. Energy dispersive spectroscopy (EDS) and the X-ray photoelectron spectroscopy (XPS) measurements, confirmed the presence of zinc, oxygen and indium elements which is in agreement with XPS results. The photoluminescence (PL) spectra of the films exhibit defects-related visible emission peaks, with intensities differing owing to different concentrations of zinc vacancies. UV–Vis spectrometer measurements show that all the films are highly transparent in the visible wavelength region (≥ 70%) and presented two different absorption edges at about 3.21 eV and 3.7 eV, these may be correspond to the band gap of zinc oxide and indium oxide respectively.Article Fabrication of Bi2212 Single Crystal Bolometer for Detection of Terahertz Waves(Springer Verlag, 2017) Semerci, Tuğçe; Demirhan, Yasemin; Miyakawa, Nobuaki; Wang, Huabing; Özyüzer, LütfiTerahertz (THz) radiation is in powerful region of electromagnetic spectrum because of prosperous application areas yet deficiency still exists about sources and detectors in despite of improvements of the research field in this range. This gap can be filled by focusing on development of THz detectors. Therefore, bolometers were preferred through many detectors due to detection sensitivity above 1 THz. In this study, Bi2Sr2CaCu2O8+δ (Bi2212) single crystals were used to fabricate THz bolometric detector. Bi2212 single crystals were transferred on sapphire substrate by cleavage process and e-beam lithography and ion beam etching were used to fabricate the microchip clean room facilities. Customdesigned cryogenic cryostat was used for a-b axis electrical and THz response measurements with liquid nitrogen cooled system. After electrical measurements, Bi2212 microchips detected the signals using Stefan-Boltzmann Lamp and response time were calculated. This study have shown with our experimental results that Bi2212 single crystals are potential candidates for THz bolometric detectors.Article Citation - WoS: 7Citation - Scopus: 7Comparative Study of Annealing and Gold Dopant Effect on Dc Sputtered Vanadium Oxide Films for Bolometer Applications(Springer Verlag, 2017) Alaboz, Hakan; Demirhan, Yasemin; Yüce, Hürriyet; Aygün, Gülnur; Özyüzer, LütfiVanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.Article Citation - WoS: 11Citation - Scopus: 13Metal Mesh Filters Based on Ti, Ito and Cu Thin Films for Terahertz Waves(Springer Verlag, 2016) Demirhan, Yasemin; Alaboz, Hakan; Özyüzer, Lütfi; Nebioğlu, Mehmet Ali; Takan, Taylan; Altan, Hakan; Sabah, CumaliIn this study, we have investigated the spectral performance of resonant terahertz (THz) bandpass filters which were produced from thin films with a metal-mesh shape. The aforementioned filters were fabricated from titanium, copper and indium tin oxide thin films on fused silica substrates by UV lithography with an array of cross-shaped apertures. Since the mesh period, cross-arm length and its width specify the spectral characteristics of the filters, we were able to reveal the performance of these filters experimentally using both a THz time domain spectrometer and a Fourier transform infrared spectrometer. A commercial electromagnetic simulation software, CST microwave studio, was used to verify the experimental data. The transmission of the filters are in the range 20–55 % at their relevant center frequencies. To our knowledge this study is the first to show that fabricated patterns based on ITO thin films can be used to filter THz radiation.Article Citation - WoS: 6Citation - Scopus: 7Thin Film Like Terahertz Bolometric Detector on Bi2212 Single Crystal(Springer Verlag, 2016) Semerci, Tuğçe; Demirhan, Yasemin; Miyakawa, Nobuaki; Wang, Huabing; Özyüzer, LütfiIn this study, we developed a microbolometer chip fabricated from high temperature superconducting Bi2Sr2CaCu2O8+δ (Bi2212) single crystals for the terahertz (THz) detection. For the manufacturing of the microbolometer chips, Bi2212 single crystals were transferred on substrate in the thin film like form and electron beam lithography, ion beam etching techniques were used. Resistance versus temperature behavior of the bolometer chips were performed by four probe technique in liquid nitrogen cryostat. Bi2212 microchips were integrated and characterized using in our custom-designed cryogenic bolometer system instead of expensive and massive cooling systems. The fabricated microchips significantly detected signals from the Stefan-Boltzmann lamp which includes a portion of THz radiation. The detected power and response time were studied for Bi2212 thin film like microbolometer chips. Our results demonstrated the feasibility of improved Bi2212 microchips could be used for bolometric detection for THz applications.Article Citation - WoS: 2Citation - Scopus: 2Effect of Al Substitution on Structural and Electrical Properties of Bi1.6pb0.4sr2cacu2-X Mx O8+? Superconducting Ceramics(Springer Verlag, 2013) Bouaicha, F.; Mosbah, M. F.; Hamel, M.; Benmaamar, F.; Amira, A.; Guerfi, T.; Haouam, A.; Özyüzer, LütfiIn this work we study the effect on structural and electrical properties of superconducting compound Bi1.6Pb0.4Sr 2CaCu2-y My O8+δ were M=Al (with y=0-0.6). The samples were prepared by the solid-state reaction method. The samples have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), direct current (DC) resistivity versus temperature ρ(T) and alternative current (AC) susceptibility measurements. Structural analysis shows that the crystalline lattice structure of the prepared sample belongs, mainly, to the superconductive tetragonal phase Bi(Pb)2212. The SEM micrographs show that in the undoped sample the grain size has a random distribution with few grains greater than 5 μm. The grains are very dense and well connected. A quite different microstructure is obtained for the doped samples of which grains are more connected with a flat characteristic shape of Bi(Pb)2212 superconductors. All samples exhibit a superconducting character and Tc and the superconducting volume fraction decrease with increasing rate of aluminum.Article Citation - WoS: 10Citation - Scopus: 11The Effects of Sb Substitution on Structural Properties in Yba 2cu 3o 7 Superconductors(Springer Verlag, 2011) Akyüz, Gönül B.; Kocabaş, Kemal; Yıldız, Aylin; Özyüzer, Lütfi; Çiftçioglu, MuhsinIn this study, the effects of partial Sb 3+ ion substitutions for the Y sites and the Cu sites on the superconducting properties of YBa 2Cu 3O y (Y123) ceramic superconductors were investigated. The samples were prepared by the conventional solid-state reaction method and the properties of the samples were investigated by means of X-ray diffraction, AC magnetic susceptibility measurements, scanning electron microscope, and energy dispersive X-ray analysis. The critical temperatures were determined to be in the range of 80-92 K for both Systems I and II. It was found that Sb-addition leads to the formation of the non-superconducting YBa 2SbO 6 phase, which has a negative effect on the critical temperature, since the highest critical temperature was measured for pure Y123. However, the increasing substitution level has a negligible effect on the X-ray diffraction analysis peak intensities of the superconducting phases. In addition, SEM images showed that Sb substitution decreases the grain size and modifies the microstructure development, which makes the samples denser.Article Citation - WoS: 24Citation - Scopus: 26The Fabrication of Thz Emitting Mesas by Reactive Ion-Beam Etching of Superconducting Bi2212 With Multilayer Masks(Springer Verlag, 2011) Köseoğlu, Hasan; Türkoğlu, Fulya; Şimşek, Yılmaz; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (IJJs) of Bi2Sr2CaCu2O8+δ (Bi2212) may require mesas with large lateral dimensions. However, there are difficulties in fabrication of perfect rectangular mesas. The lateral angles of mesas should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. We patterned Ta/photoresist and photoresist/Ta/photoresist masks on Bi2212 and used selectiveionetchingtoovercomethethickphotoresistlayershading on the lateral dimension of mesa during the ion-beam etching. The reactive ion-beam etchings have been done with ion beams of Ar, N2 and O2, and we have obtained mesas about 1 µm with lateral angle of approximately 50 to 75°, which is better than the mesas fabricated with photoresist mask.Article Citation - WoS: 2Citation - Scopus: 2The Icrn Value in Intrinsic Josephson Tunnel Junctions in Bi2sr2cacu2o8+? (bi2212) Mesas(Springer Verlag, 2011) Kurter, Cihan; Özyüzer, Lütfi; Hinks, David G.; Gray, Kenneth E.; Zasadzinski, John F.The c-axis current-voltage I(V) characteristics have been obtained on a set of mesas of varying height sculpted on Bi2Sr2CaCu2O8+δ (Bi2212) crystals intercalated with HgB2. The intercalation, along with the small number of junctions in the mesa, N = 6–30, minimizes the degree of self-heating, leading to a consistent Josephson critical current, IC, among junctions in the mesa. The Bi2212 crystals with a bulk TC =74 K are overdoped and display negligible pseudogap effects allowing an accurate measure of the normal state resistance, RN. These properties make themesas nearlyideal for the determinationof the Josephson ICRN product.Wefind ICRN valuesconsistently ∼30% of the quasiparticle gap parameter, /e, which was measured independently using a mechanical contact, break junction technique. The latter was necessitated by higher bias heating effects in the mesas which prevented direct measurements of the superconducting gap. These values are among the highest reported and may represent the maximum intrinsic value for ICRN. The results indicate that the c-axis transport is a mixture of coherent and incoherent tunneling.