Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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  • Article
    Citation - WoS: 8
    Citation - Scopus: 9
    Cesium Manganese Chloride: Stable Lead-Free Perovskite From Bulk To Single Layer
    (Elsevier, 2021) Sözen, Yiğit; Özen, Sercan; Şahin, Hasan
    Motivated by the recent advances in perovskite-based solar cells, here we investigate stability, electronic properties and vibrational characteristics of lead-free perovskite, CsMnCl3, and its low dimensional forms by means of first-principles calculations. Structural optimizations reveal that, regardless of whether it is bulk or ultra-thin single layer cubic perovskite structure, CsMnCl3 crystal exhibit robust antiferromagnetism in its ground state due to oppositely aligned magnetic moments of Mn atoms. In addition to total energy calculations, phonon band dispersions indicate that CsMnCl3 structure sustains its dynamical stability down to its thinnest single layer crystal structures. The calculated Raman spectrums state that while the first-order Raman scattering is forbidden for bulk CsMnCl3 due to the cubic symmetry; dimensional-reduction-driven symmetry breaking leads to emergence of experimentally-observable distinctive Raman active modes in bilayer and single-layer crystal structures. Moreover, the electronic band dispersions reveal that from its bulk to ultra-thin single layer structures CsMnCl3 crystals are robust antiferromagnetic insulators. Multiple valid features like controllable dimensionality, robust antiferromagnetism and wide electronic band gap make cubic CsMnCl3 crystal as a potential candidate for nano-scale optoelectronic applications.
  • Article
    Citation - WoS: 36
    Citation - Scopus: 34
    Raman Fingerprint of Stacking Order in Hfs2-Ca(oh)(2) Heterobilayer
    (American Physical Society, 2019) Yağmurcukardeş, Mehmet; Özen, Sercan; İyikanat, Fadıl; Peeters, François M.; Şahin, Hasan
    Using density functional theory-based first-principles calculations, we investigate the stacking order dependence of the electronic and vibrational properties of HfS2-Ca(OH)(2) heterobilayer structures. It is shown that while the different stacking types exhibit similar electronic and optical properties, they are distinguishable from each other in terms of their vibrational properties. Our findings on the vibrational properties are the following: (i) from the interlayer shear (SM) and layer breathing (LBM) modes we are able to deduce the AB' stacking order, (ii) in addition, the AB' stacking type can also be identified via the phonon softening of E-g(I) and A(g)(III) modes which harden in the other two stacking types, and (iii) importantly, the ultrahigh frequency regime possesses distinctive properties from which we can distinguish between all stacking types. Moreover, the differences in optical and vibrational properties of various stacking types are driven by two physical effects, induced biaxial strain on the layers and the layer-layer interaction. Our results reveal that with both the phonon frequencies and corresponding activities, the Raman spectrum possesses distinctive properties for monitoring the stacking type in novel vertical heterostructures constructed by alkaline-earth-metal hydroxides.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 12
    Orthorhombic Cspbi3 Perovskites: Thickness-Dependent Structural, Optical and Vibrational Properties
    (Elsevier, 2020) Özen, Sercan; İyikanat, Fadıl; Özcan, Mehmet; Tekneci, Gülsüm Efsun; Eren, İsmail; Sözen, Yiğit; Şahin, Hasan
    Cesium lead halide perovskites have been subject to intense investigation, mostly because of their potential to be used in optoelectronic device applications. However, regarding the need for nanoscale materials in forthcoming nanotechnology applications, understanding of how the characteristic properties of these perovskite crystals are modified through dimensional crossover is essential. In this study, thickness-dependence of the structural, electronic and vibrational properties of orthorhombic CsPbI3, which is one of the most stable phase at room temperature, is investigated by means of state-of-the-art first-principles calculations. Our results show that (i) bilayers and monolayers of CsPbI3 can be stabilized in orthorhombic crystal symmetry, (ii) among; the possible ultra-thin perovskites only structures with CsI-terminated surface are dynamically stable (iii) electronic band gap increases with decrease in perovskite thickness due to quantum size effect and (iv) reflectivity and transmissivity of the orthorhombic CsPbI3 can be tuned by varying the thickness that modifies the electron confinement. (c) 2019 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 72
    Citation - Scopus: 74
    Electronic and Vibrational Properties of Pbi2: From Bulk To Monolayer
    (American Physical Society, 2018) Yağmurcukardeş, Mehmet; Peeters, François M.; Şahin, Hasan
    Using first-principles calculations, we study the dependence of the electronic and vibrational properties of multilayered PbI2 crystals on the number of layers and focus on the electronic-band structure and the Raman spectrum. Electronic-band structure calculations reveal that the direct or indirect semiconducting behavior of PbI2 is strongly influenced by the number of layers. We find that at 3L thickness there is a direct-to-indirect band gap transition (from bulk-to-monolayer). It is shown that in the Raman spectrum two prominent peaks, A1g and Eg, exhibit phonon hardening with an increasing number of layers due to the interlayer van der Waals interaction. Moreover, the Raman activity of the A1g mode significantly increases with an increasing number of layers due to the enhanced out-of-plane dielectric constant in the few-layer case. We further characterize rigid-layer vibrations of low-frequency interlayer shear (C) and breathing (LB) modes in few-layer PbI2. A reduced monoatomic (linear) chain model (LCM) provides a fairly accurate picture of the number of layers dependence of the low-frequency modes and it is shown also to be a powerful tool to study the interlayer coupling strength in layered PbI2.
  • Article
    Citation - WoS: 1902
    Citation - Scopus: 2049
    Monolayer Honeycomb Structures of Group-Iv Elements and Iii-V Binary Compounds: First-Principles Calculations
    (American Physical Society, 2009) Şahin, Hasan; Cahangirov, Seymur; Topsakal, Mehmet; Bekaroğlu, Edip; Aktürk, Ethem; Senger, Ramazan Tuğrul; Çıracı, Salim
    Using first-principles plane-wave calculations, we investigate two-dimensional (2D) honeycomb structure of group-IV elements and their binary compounds as well as the compounds of group III-V elements. Based on structure optimization and phonon-mode calculations, we determine that 22 different honeycomb materials are stable and correspond to local minima on the Born-Oppenheimer surface. We also find that all the binary compounds containing one of the first row elements, B, C, or N have planar stable structures. On the other hand, in the honeycomb structures of Si, Ge, and other binary compounds the alternating atoms of hexagons are buckled since the stability is maintained by puckering. For those honeycomb materials which were found stable, we calculated optimized structures, cohesive energies, phonon modes, electronic-band structures, effective cation and anion charges, and some elastic constants. The band gaps calculated within density functional theory using local density approximation are corrected by G W0 method. Si and Ge in honeycomb structure are semimetal and have linear band crossing at the Fermi level which attributes massless Fermion character to charge carriers as in graphene. However, all binary compounds are found to be semiconductor with band gaps depending on the constituent atoms. We present a method to reveal elastic constants of 2D honeycomb structures from the strain energy and calculate the Poisson's ratio as well as in-plane stiffness values. Preliminary results show that the nearly lattice matched heterostructures of these compounds can offer alternatives for nanoscale electronic devices. Similar to those of the three-dimensional group-IV and group III-V compound semiconductors, one deduces interesting correlations among the calculated properties of present honeycomb structures.