Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 4Citation - Scopus: 4Identification of a Magnetic Phase Via a Raman Spectrum in Single-Layer Mnse: an Ab Initio Study(Elsevier, 2022) Yayak, Yankı Öncü; Şahin, Hasan; Yağmurcukardeş, MehmetMotivated by the recent experimental realization of single-layer two-dimensional MnSe [ACS Nano2021, 15, 13794-13802], structural, magnetic, elastic, vibrational, and electronic properties of single-layer MnSe are investigated by using density functional theory-based calculations. Among four different magnetic phases, namely, ferromagnetic (FM) and Nẽel-, zigzag-, and stripy-antiferromagnetic (AFM) phases, the Nẽel-AFM structure is found to be the energetically most favorable phase. Structural optimizations show the formation of in-plane anisotropy within the structures of zigzag- and stripy-AFM phases in single-layer MnSe. For the dynamically stable four magnetic phases, predicted Raman spectra reveal that each phase exhibits distinctive vibrational features and can be distinguished from each other. In addition, the elastic constants indicate the mechanical stability of each magnetic phase in single-layer MnSe and reveal the soft nature of each phase. Moreover, electronic band dispersion calculations show the indirect band gap semiconducting nature with varying electronic band gap energies for all magnetic phases. Furthermore, the atomic orbital-based density of states reveals the existence of out-of-plane orbitals dominating the top valence states in zigzag- and stripy-AFM phases, giving rise to the localized states. The stability of different magnetic phases and their distinct vibrational and electronic properties make single-layer MnSe a promising candidate for nanoelectronic and spintronic applications.Article Citation - WoS: 8Citation - Scopus: 8Electronic Properties of Intrinsic Vacancies in Single-Layer Caf2 and Its Heterostructure With Monolayer Mos2(AIP Publishing LLC, 2021) Li, Zhenzhen; Başkurt, Mehmet; Şahin, Hasan; Gao, Shiwu; Kang, JunExploring gate insulator materials for 2D transistors and their defect properties is of importance for device performance optimization. In this work, the structural and electronic properties of intrinsic vacancies in the CaF2 single layer and its heterostructures with monolayer MoS2 are investigated from first-principles calculations. V-Ca introduces a shallow defect level close to the VBM, whereas VF introduces a deep level below the CBM. In both cases, spin polarization is observed. Overall, VF has a relatively lower formation energy than VCa, except for the extreme Ca-rich case. Thus, VF should be dominant in CaF2. The band offset between CaF2 and MoS2 is determined to be type-I, with large offsets at both the conduction band and valence band. With the presence of vacancies in CaF2, the type-I band offset is preserved. The electron or hole on the defect states will transfer from CaF2 to MoS2 due to the large band offset, and spin polarization vanishes. Nevertheless, there are no defect states inside the gap or around the band edge of MoS2, and the electronic properties of MoS2 are almost intact. Compared with h-BN that has a small valence band offset with MoS2 and could introduce in-gap defect states, CaF2 can be a good candidate to serve as the dielectric layer of MoS2-based transistors. Published under an exclusive license by AIP Publishing.Article Citation - WoS: 5Citation - Scopus: 6Toward Single-Layer Janus Crystals: Off-Balance Materials From Synthesis To Nanotechnology Applications(American Institute of Physics, 2021) Oğuztürk, H. Esra; Sözen, Yiğit; Akyol, Cansu; Özkendir İnanç, Dilce; Yıldız, Ümit Hakan; Şahin, HasanThe existence of things is directly related to their structural symmetry in a broad framework ranging from atoms to crystalline materials and from simple cells to complex organisms like humans. However, structural imbalance that occurs through natural or artificial means can provide completely different advantages. Molecules, crystals, and complex structures with structural imbalance constitute the family of Janus-type materials. This perspective provides a comprehensive discussion on the synthesis techniques of Janus-type materials, their use in fields from biology to materials science, and very recent studies on the family of 2D ultrathin graphene-like structures. We believe that, thanks to the advances in experimental techniques, the few-atom-sized off-balanced materials will be indispensable parts of the nanotechnology products that soon will be used in our daily lives.Article Citation - WoS: 3Citation - Scopus: 3Green Fabrication of Lanthanide-Doped Hydroxide-Based Phosphors: Y(oh)(3):eu3+ Nanoparticles for White Light Generation(Beilstein-Institut Zur Forderung der Chemischen Wissenschaften, 2019) Güner, Tuğrul; Kuş, Anılcan; Özcan, Mehmet; Genç, Aziz; Şahin, Hasan; Demir, Mustafa MuammerPhosphors can serve as color conversion layers to generate white light with varying optical features, including color rendering index (CRI), high correlated color temperature (CCT), and luminous efficacy. However, they are typically produced under harsh synthesis conditions such as high temperature, high pressure, and/or by employing a large amount of solvent. In this work, a facile, water-based, rapid method has been proposed to fabricate lanthanide-doped hydroxide-based phosphors. In this sense, sub-micrometer-sized Y(OH)(3):Eu3+ particles (as red phosphor) were synthesized in water at ambient conditions in <= 60 min reaction time. The doping ratio was controlled from 2.5-20 mol %. Additionally, first principle calculations were performed on Y(OH)(3):Eu3+ to understand the preferable doping scenario and its optoelectronic properties. As an application, these fabricated red phosphors were integrated into a PDMS/YAG:Ce3+ composite and used to generate white light. The resulting white light showed a remarkable improvement (approximate to 24%) in terms of luminous efficiency, a slight reduction of CCT (from 3900 to 3600 K), and an unchanged CRI (approximate to 60) as the amount of Y(OH)(3):Eu3+ was increased.Article Citation - WoS: 3Citation - Scopus: 4Experimental and First-Principles Investigation of Cr-Driven Color Change in Cesium Lead Halide Perovskites(American Institute of Physics, 2019) Özen, Sercan; Güner, Tuğrul; Topçu, Gökhan; Özcan, Mehmet; Demir, Mustafa Muammer; Şahin, HasanHerein, we report room temperature Cr-doping for all-inorganic perovskites that have attracted great attention in recent years due to their extraordinary optical properties, low cost, and ease of synthesis. Incorporation of Cr 3 + ions into the perovskite crystal lattices is achieved by following a facile route involving an antisolvent recrystallization method at room temperature. It is shown that both Cr-doping and formation of crystals in the CsPbBr x Cl 3 - x phase are provided by increasing the concentration of the CrCl 3 solution. It is also observed that the doping procedure leads to the emergence of three types of distinctive peaks in the PL spectrum originating from CsPbBr x Cl 3 - x domains (476-427nm), Cr-strained host lattices (515nm), and midgap states formed by Cr dopants (675-775nm). It is also found that the Cr-doped perovskites emitting a dark violaceous color change their color to white with a high color rendering index (88) in 30-day time intervals. Easy-tunable optical properties of all-inorganic Cs perovskites indicate their great potential for future optoelectronic device applications.Article Citation - WoS: 28Citation - Scopus: 28Enhanced Stability of Single-Layer W-Gallenene Through Hydrogenation(American Chemical Society, 2018) Badalov, S. V.; Yağmurcukardeş, Mehmet; Peeters, François M.; Şahin, HasanUsing density functional theory based first-principles calculations, the effect of surface hydrogenation on the structural, dynamical, electronic, and mechanical properties of monolayer washboard-gallenene (w-gallenene) is investigated. It is found that the dynamically stabilized strained monolayer of w-gallenene has a metallic nonmagnetic ground state. Both one-sided and two-sided hydrogenations of w-gallenene suppress its dynamical instability even when unstrained. Unlike one-sided hydrogenated monolayer w-gallenene (os-w-gallenene), two-sided hydrogenated monolayer w-gallenene (ts-w-gallenene) possesses the same crystal structure as w-gallenene. Electronic band structure calculations reveal that monolayers of hydrogenated derivatives of w-gallenene exhibit also metallic nonmagnetic ground state. Moreover, the linear-elastic constants, in-plane stiffness and Poisson ratio, are enhanced by hydrogenation, which is opposite to the behavior of other hydrogenated monolayer crystals. Furthermore, monolayer w-gallenene and ts-w-gallenene remain dynamically stable up to relatively higher biaxial strains as compared to borophene. With its enhanced dynamical stability, robust metallic character, and enhanced linear-elastic properties, hydrogenated monolayer w-gallenene is a potential candidate for nanodevice applications as a two-dimensional flexible metal.Article Citation - WoS: 93Citation - Scopus: 95Single-Layer Janus-Type Platinum Dichalcogenides and Their Heterostructures(American Chemical Society, 2019) Kahraman, Zeynep; Kandemir, Ali; Yağmurcukardeş, Mehmet; Şahin, HasanUltrathin two-dimensional Janus-type platinum dichalcogenide crystals formed by two different atoms at opposite surfaces are investigated by performing state-of-the-art density functional theory calculations. First, it is shown that single-layer PtX2 structures (where X = S, Se, or Te) crystallize into the dynamically stable IT phase and are indirect band gap semiconductors. It is also found that the substitutional chalcogen doping in all PtX2 structures is favorable via replacement of surface atoms with a smaller chalcogen atom, and such a process leads to the formation of Janus-type platinum dichalcogenides (XPtY, where X and Y stand for S, Se, or Te) which are novel single-layer crystals. While all Janus structures are indirect band gap semiconductors as their binary analogues, their Raman spectra show distinctive features that stem from the broken out-of-plane symmetry. In addition, it is revealed that the construction of Janus crystals enhances the piezoelectric constants of PtX2 crystals significantly both in the in plane and in the out-of-plane directions. Moreover, it is shown that vertically stacked van der Waals heterostructures of binary and ternary (Janus) platinum dichalcogenides offer a wide range of electronic features by forming bilayer heterojunctions of type-I, type-II, and type-III, respectively. Our findings reveal that Janus-type ultrathin platinum dichalcogenide crystals are quite promising materials for optoelectronic device applications.Article Citation - WoS: 72Citation - Scopus: 77Gd3+-Doped Alpha-Cspbi3 Nanocrystals With Better Phase Stability and Optical Properties(American Chemical Society, 2019) Güvenç, Çetin Meriç; Yalçınkaya, Yenal; Özen, Sercan; Şahin, Hasan; Demir, Mustafa MuammerBlack alpha-CsPbI3 perovskites are unable to maintain their phase stability under room conditions; hence, the alpha-CsPbI3 phase transforms into a thermodynamically stable yellow delta-CsPbI3 phase within a few days, which has a nonperovskite structure and high band gap for optoelectronic applications. This phase transformation should be prevented or at least retarded to make use of superior properties of alpha-CsPbI3 in optoelectronic applications. In this study, Gd3+ doping was employed with the aim of increasing the stability of alpha-CsPbI3. All doped alpha-CsPbI3 nanocrystals with various levels of Gd3+, between 5 and 15 mol %, have shown greater phase stability than that of the pure alpha-CsPbI3 phase from 5 days up to 11 days under ambient conditions. This prolonged phase stability can be attributed to three potential reasons: increased tolerance factor of the perovskite structure, distorted cubic symmetry, and decreased defect density in nanocrystals. Urbach energy values suggest the reduction of defect density in the doped nanocrystals. Also, use of 10 mol % Gd3+ as a dopant material increases the photoluminescence quantum yield from 70 to 80% and fluorescence lifetime of alpha-CsPbI3 from 47.4 to 64.4 ns. Further, density functional theory calculations are in a good agreement with the experimental results.Article Citation - WoS: 15Citation - Scopus: 15Vertical van der waals heterostructure of single layer InSe and SiGe(American Chemical Society, 2019) Eren, İsmail; Özen, Sercan; Sözen, Yiğit; Yağmurcukardeş, Mehmet; Şahin, HasanWe present a first-principles investigation on the stability, electronic structure, and mechanical response of ultrathin heterostructures composed of single layers of InSe and SiGe. First, by performing total energy optimization and phonon calculations, we show that single layers of InSe and SiGe can form dynamically stable heterostructures in 12 different stacking types. Valence and conduction band edges of the heterobilayers form a type-I heterojunction having a tiny band gap ranging between 0.09 and 0.48 eV. Calculations on elastic-stiffness tensor reveal that two mechanically soft single layers form a heterostructure which is stiffer than the constituent layers because of relatively strong interlayer interaction. Moreover, phonon analysis shows that the bilayer heterostructure has highly Raman active modes at 205.3 and 43.7 cm(-1), stemming from the out-of-plane interlayer mode and layer breathing mode, respectively. Our results show that, as a stable type-I heterojunction, ultrathin heterobilayer of InSe/SiGe holds promise for nanoscale device applications.Article Citation - WoS: 5Citation - Scopus: 5Functionalization of Single-Layer Tas2 and Formation of Ultrathin Janus Structures(Cambridge University Press, 2020) Kahraman, Zeynep; Yağmurcukardeş, Mehmet; Şahin, HasanAb initio calculations are performed to investigate the structural, vibrational, electronic, and piezoelectric properties of functionalized single layers of TaS2. We find that single-layer TaS2 is a suitable host material for functionalization via fluorination and hydrogenation. The one-side fluorinated (FTaS2) and hydrogenated (HTaS2) single layers display indirect gap semiconducting behavior in contrast to bare metallic TaS2. On the other hand, it is shown that as both surfaces of TaS2 are saturated anti-symmetrically, the formed Janus structure is a dynamically stable metallic single layer. In addition, it is revealed that out-of-plane piezoelectricity is created in all anti-symmetric structures. Furthermore, the Janus-type single-layer has the highest specific heat capacity to which longitudinal and transverse acoustical phonon modes have contribution at low temperatures. Our findings indicate that single-layer TaS2 is suitable for functionalization via H and F atoms that the formed, anti-symmetric structures display distinctive electronic, vibrational, and piezoelectric properties.
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