Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Now showing 1 - 6 of 6
  • Article
    Citation - WoS: 8
    Citation - Scopus: 8
    Development of Zto/Ag Transparent Electrodes for Thin Film Solar Cells
    (Springer, 2022) Türkoğlu, Fulya; Köseoğlu, Hasan; Ekmekçioğlu, Merve; Cantaş, Ayten; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, Lütfi
    This article presents the optimization of Zinc Tin Oxide/Silver/Zinc Tin Oxide (ZTO/Ag/ZTO) multilayers to implement them in thin film solar cells as transparent electrodes. To achieve improvements on the performance of these transparent multilayers, effect of Ag and ZTO thicknesses, and position of Ag layer within the multilayer were investigated. Electrical and optical characterization of these multilayers revealed that reduced sheet resistance and improved optical transmittance can be acquired for solar cells by the optimization of thin film thicknesses and position of the Ag within the multilayer. The improvement of the electrical and optical behavior of the ZTO/Ag/ZTO structures enabled figure of merit (FoM) values up to 69.69 × 10–3 Ω−1. The performance of our multilayer electrodes was also compared with ITO and AZO electrodes. The obtained results suggest that fabricated multilayer electrodes can be a good choice for thin film solar cells.
  • Article
    Citation - WoS: 21
    Citation - Scopus: 24
    Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices
    (Elsevier Ltd., 2019) Türkoğlu, Fulya; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, Gülnur
    Copper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.
  • Article
    Citation - WoS: 42
    Citation - Scopus: 46
    Importance of Cds Buffer Layer Thickness on Cu2znsns4-Based Solar Cell Efficiency
    (IOP Publishing Ltd., 2018) Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Özyüzer, Gülnur Aygün
    Cu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding the composition and structure of the CZTS absorber layer is necessary to obtain efficient solar cells. With this aim, x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy and x-ray photoelectron spectroscopy were used to investigate the CZTS absorber layers. CZTS absorber films were obtained and found to be Cu-poor and Zn-rich in composition, which are both qualities desired for efficient solar cells. CdS was used as a buffer layer and was grown by the chemical bath deposition technique. The optical properties of CdS films on SLG were searched for using a spectroscopic ellipsometer and the results revealed that the bandgap increases with film thickness increment. CZTS-based solar cells with different CdS buffer layer thicknesses were prepared using a SLG/Mo/CZTS/CdS/ZnO/AZO solar cell configuration. The influence of the CdS buffer layer thickness on the performance of the CZTS solar cells was investigated. Device analysis showed that electrical characteristics of solar cells strongly depend on the buffer layer's thickness. Highly pronounced changes in V OC, fill factor and J SC parameters, which are the main efficiency limiting factors, with changing buffer layer thicknesses were observed. Our experiments confirmed that decreasing the CdS thickness improved the efficiency of CZTS solar cells down to the lowest thickness limit.
  • Article
    Citation - WoS: 10
    Citation - Scopus: 10
    In-Situ Spectroscopic Ellipsometry and Structural Study of Hfo2 Thin Films Deposited by Radio Frequency Magnetron Sputtering
    (American Institute of Physics, 2014) Cantaş, Ayten; Özyüzer, Gülnur Aygün; Basa, Deepak Kumar
    We have investigated the reduction of unwanted interfacial SiO2 layer at HfO2/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO2 thin films for possible direct contact between HfO2 thin film and Si substrate, necessary for the future generation devices based on high-κ HfO2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO2 thin films and also to undertake the in-situ characterization of the high-κ HfO2 thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO2 thin films are crystalline although they were deposited at room temperature.
  • Article
    Citation - WoS: 42
    Citation - Scopus: 44
    Growth of Cu2znsns4 Absorber Layer on Flexible Metallic Substrates for Thin Film Solar Cell Applications
    (Elsevier Ltd., 2015) Yazıcı, Şebnem; Olgar, Mehmet Ali; Akça, Fatime Gülşah; Cantaş, Ayten; Kurt, Metin; Aygün, Gülnur; Tarhan, Enver; Yanmaz, Ekrem; Özyüzer, Lütfi
    In this work, Cu2ZnSnS4 (CZTS) absorber layers were fabricated using a two-stage process. Sequentially deposited Cu-Zn-Sn thin film layers on metallic foils were annealed in an Ar + S2(g) atmosphere. We aimed to investigate the role of flexible titanium and molybdenum foil substrates in the growth mechanism of CZTS thin films. The Raman spectra and X-ray photoelectron spectroscopy analyses of the sulfurized thin films revealed that, except for the presence of Sn-based secondary phases, nearly pure CZTS thin films were obtained. Additionally, the intense and sharp X-ray diffraction peak from the (112) plane provided evidence of good crystallinity. Electron dispersive spectroscopy analysis indicated sufficient sulfur content but poor Zn atomic weight percentage in the films. Absorption and band-gap energy analyses were carried out to confirm the suitability of CZTS thin films as the absorber layer in solar cell applications. Hall effect measurements showed the p-type semiconductor behavior of the CZTS samples. Moreover, the back contact behavior of these metallic flexible substrates was investigated and compared. We detected formation of cracks in the CZTS layer on the molybdenum foils, which indicates the incompatibility of molybdenum's thermal expansion coefficient with the CZTS structure. We demonstrated the application of the magnetron sputtering technique for the fabrication of CZTS thin films on titanium foils having lightweight, flexible properties and suitable for roll-to-roll manufacturing for high throughput fabrication. Titanium foils are also cost competitive compared to molybdenum foils. © 2015 Elsevier B.V.
  • Conference Object
    Citation - WoS: 33
    Citation - Scopus: 35
    Effects of Physical Growth Conditions on the Structural and Optical Properties of Sputtered Grown Thin Hfo2 Films
    (Elsevier Ltd., 2011) Aygün, Gülnur; Cantaş, Ayten; Şimşek, Yılmaz; Turan, Raşit
    HfO2 thin films were prepared by reactive DC magnetron sputtering technique on (100) p-Si substrate. The effects of O2/Ar ratio, substrate temperature, sputtering power on the structural properties of HfO2 grown films were studied by Spectroscopic Ellipsometer (SE), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectrum, and X-ray photoelectron spectroscopy (XPS) depth profiling techniques. The results show that the formation of a SiOx suboxide layer at the HfO2/Si interface is unavoidable. The HfO2 thickness and suboxide formation are highly affected by the growth parameters such as sputtering power, O 2/Ar gas ratio during sputtering, and substrate temperature. XRD spectra show that the deposited films have (111) monoclinic phase of HfO 2, which is also supported by FTIR spectra. XPS depth profiling spectra shows that highly reactive sputtered Hf atoms consume some of the oxygen atoms from the underlying SiO2 to form HfO2, leaving Si-Si bonds behind. © 2010 Elsevier B.V. All rights reserved.