Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 4Citation - Scopus: 5Enhanced Optoelectronic Properties of Magnetron Sputtered Ito/Ag Multilayers by Electro-Annealing(AVS, 2022) Uyanık, Zemzem; Türkoğlu, Fulya; Köseoğlu, Hasan; Ekmekçioğlu, Merve; Ata, Bengü; Demirhan, Yasemin; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIndium tin oxide/silver/indium tin oxide (ITO/Ag/ITO) multilayers have attracted much attention to fulfill the growing need for high-performance transparent conducting oxide electrodes. To make these transparent multilayers work better, electro-annealing, which is a method of self-heating by electric current, can be effective. Moreover, the effect of current on ITO/Ag/ITO multilayers should be investigated to make sure that electronic devices will be reliable over their lifetime. In this study, ITO/Ag/ITO multilayer electrodes with varying Ag thicknesses were grown by DC magnetron sputtering at room temperature. Structural, optical, and electrical properties of these multilayers were investigated before and after electro-annealing. Measurement results revealed that improved optical transmittance and sheet resistance can be obtained by the optimization of Ag thickness for the as-grown ITO/Ag/ITO layers. The highest figure of merit (FoM) value of 17.37 × 10−3 Ω−1 with optical transmittance of 85.15% in the visible region and sheet resistance of 11.54 Ω/□ was obtained for the Ag thickness of 16.5 nm for as-grown samples. The electro-annealing of as-grown ITO/Ag/ITO multilayers led to improved optical behavior of the multilayer structure over a wide spectral range, especially in the near-infrared range. Electro-annealing also provided an improvement in the crystallinity and sheet resistance of the electrodes. The improvement of the electrical and optical properties of the structure enabled a FoM of 23.07 × 10−3 Ω−1 with the optical transmittance of 86.80% in the visible region and sheet resistance of 10.52 Ω/□. The findings of this work provide proper knowledge of the properties of ITO/Ag/ITO multilayers under electrical current and suggest that the overall performance of the multilayers can be improved by the electro-annealing process.Book Part Citation - Scopus: 1Thz Sources and Detectors Fabricated From High Temperature Superconductors(Springer, 2021) Demirhan, Yasemin; Türkoğlu, Fulya; Altan, Hakan; Sabah, Cumali; Özyüzer, LütfiHigh temperature superconductors have unique properties that can be useful in the THz region, single crystal constituted from superconducting CuO2-layers could sustain high voltages across the junctions and they are coupled through the intrinsic Josephson Effect this maintains the potential for very intense, coherent radiation which spreads over the THz gap. We investigated various experimental techniques to fabricate THz sources, bolometers and filters for efficient THz emission and detection. Rectangular mesa structures were fabricated on Bi2Sr2CaCu2O8-x (Bi2212) single crystal superconductors using standard e-beam lithography and Ar ion beam etching systems and an emitted power as high as 60 ?W at frequencies up to 0.85 THz was detected from micron sized continuous wave terahertz sources. We also fabricated bolometric microchips for THz detection purpose from Bi2212 single crystals. Bi2212 microchips detected the signals and response time were calculated, our results have clearly shown that Bi2212 single crystals are potential candidates for THz detection. The detection properties and sensitivity of bolometer chips can be further improved by integrating an antenna and filter structures. In order to investigate this we have fabricated metamaterial THz filters based on metals and YBa2Cu3Ox superconducting thin films with metal-mesh shape and a unique fourcross shape pattern. Both a THz time domain spectrometer and a Fourier transform infrared spectrometer (FTIR) were used to investigate the performance of these filters and the results were compared with simulations done with a commercially available electromagnetic simulation software. © Springer Nature B.V. 2021.Conference Object Spin Polarized Tunneling in Large Area Mesas of Superconducting Bi 2sr2cacu2o8+δ for the Generation of the Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Türkoğlu, Fulya; Şimşek, Yılmaz; Köseoğlu, Hasan; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiRectangular intrinsic Josephson junction mesa structures of superconducting Bi2Sr2CaCu2O8+delta (Bi2212) can be used as a source of continuous, coherent and polarized terahertz (THz) radiation. THz emitting mesas are below a certain underdoped level of Bi2212. They have small Josephson critical current in contrast to optimally doped and overdoped Bi2212. We deposited Au/Co/Au multilayer top of mesa and obtained small critical current from mesas fabricated by as-grown Bi2212 single crystals due to injection of spin polarized current. The spin injection eliminates adjustment of doping level for successful THz emission.Conference Object Reactive Ion Beam Etching of Superconducting Bi2212 by Ta/Pr and Pr'/ta/pr Masks for the Generation of Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Köseoğlu, Hasan; Türkoğlu, Fulya; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (Ills) of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) may require mesas with large lateral dimension. However, there are difficulties in fabrication of perfect rectangular mesas. Mesa lateral angles should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. Since thick photoresist (PR) layer shades the lateral dimension of mesa during ion beam etching, we patterned Ta/PR and PR'/Ta/PR masks on Bi2212 and used selective ion etching to overcome this problem. The reactive ion beam etchings have done with ion beam of Ar, N(2) and O(2) and we have obtained mesas about 1 mu m with lateral angle of approximately 50 to 75 degrees which is better than the mesas fabricated with single layer mask.Article Citation - WoS: 31Citation - Scopus: 33The Controllable Deposition of Large Area Roll-To Sputtered Ito Thin Films for Photovoltaic Applications(Elsevier, 2020) Demirhan, Yasemin; Köseoğlu, Hasan; Türkoğlu, Fulya; Uyanık, Zemzem; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIn the present study, using a large area roll-to-roll DC magnetron sputtering system deposition of ITO thin films on polyethylene terephthalate (PET) substrates were achieved. In order to investigate the effect of growth conditions on the film properties all through the deposition process, optical emission spectroscopy (OES) analysis have been accomplished in a governable way. The consequences of Oxygen partial pressure and film thickness on electrical, and optical properties of the films were determined. It was shown that the intensity of optical emission peaks are subjected to the discharge power and as well as the O-2/Ar flow ratio. Large area, uniform ITO films with relatively high transparency and low electrical resistivity (R(2)(<)50 Omega/sqr) were succesfully deposited on PET substrates. The significance of both the figure of merit (FOM) and the optical band gap values on the performance of different TCO thin films were addressed. In this work, the obtained results suggest that the overall performance is sufficient to implement the ITO films in photovoltaic and OLED applications. (C) 2019 Elsevier Ltd. All rights reserved.Article Citation - WoS: 20Citation - Scopus: 20Area Dependence and Influence of Crystal Inhomogeneity on Superconducting Properties of Bi2212 Mesa Structures(Elsevier Ltd., 2015) Demirhan, Yasemin; Sağlam, Hilal; Türkoğlu, Fulya; Alaboz, Hakan; Özyüzer, Lütfi; Miyakawa, Nobuaki; Kadowaki, K.The rapid increase in applications of terahertz waves requires new techniques to obtain continuous wave terahertz sources. Mesa structures fabricated from high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) single crystal have been observed as an intense, coherent, continuous electromagnetic wave source in the terahertz (THz) frequency region. However, in order to produce coherent radiation with high applicable power, we need large mesa structures that enter a collective electromagnetic state in which their oscillations are largely synchronized in phase. On the other hand, large mesa structures cause a heating problem. In this study, we report on the critical current density dependence of mesa area and the crystal inhomogeneity to understand heating problems in large area mesas for terahertz radiation. Since the doping dependence of Bi2212 is an important parameter, the as-grown Bi2212 crystals were heat-treated at various temperatures under vacuum conditions. We have fabricated triple mesa structures from Bi2212 single crystal using e-beam lithography and argon ion beam etching techniques with same area and with different area on the same chip. We investigated and compared characteristics of triple mesas which are on the same chip and next to each other. In this way, we searched the crystal inhomogeneity in triple mesa structures and studied the critical current density dependence of mesa area to obtain high emission power for the THz radiation. Our experimental results clearly show that the Josephson critical current density is decreasing when the area of mesa is increasing. © 2015 Elsevier Ltd. All rights reserved.Article Citation - WoS: 12Citation - Scopus: 13Emission of the Thz Waves From Large Area Mesas of Superconducting Bi 2sr2cacu2o8+? by the Injection of Spin Polarized Current(Elsevier Ltd., 2013) Türkoğlu, Fulya; Özyüzer, Lütfi; Köseoğlu, Hasan; Demirhan, Yasemin; Preu, S.; Malzer, S.; Şimşek, Yılmaz; Wang, Huabing; Muller, P.Rectangular Au/Co/Au/Bi2Sr2CaCu2O 8+δ (Bi2212) mesa structures with large areas and high thicknesses were fabricated on as-grown Bi2212 single crystals in order to obtain small critical current from as-grown mesas by the injection of spin polarized current and so eliminate the adjustment of doping level for successful THz emission. We have performed c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometer measurements. It is the first time that THz emission has been observed from as-grown mesas due to injection of spin polarized current. © 2013 Elsevier Ltd. All rights reserved.Article Citation - WoS: 39Citation - Scopus: 40Interferometer Measurements of Terahertz Waves From Bi 2sr 2cacu 2o 8+d Mesas(IOP Publishing Ltd., 2012) Türkoğlu, Fulya; Köseoğlu, Hasan; Demirhan, Yasemin; Özyüzer, Lütfi; Preu, Sascha; Malzer, Stefan; Şimşek, Yusuf; Müller, P.; Yamamoto, T.; Kadowaki, K.We fabricated rectangular mesa structures of superconducting Bi 2Sr 2CaCu 2O 8+d (Bi2212) using e-beam lithography and Ar ion beam etching techniques for terahertz (THz) emission. c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometric THz power measurements were performed to characterize Bi2212 mesas. The emission frequency of mesas was determined using a Michelson interferometer setup which also demonstrates polarized emission. Interference patterns of THz radiation from Bi2212 mesas were detected by various detectors such as a liquid helium cooled silicon composite bolometer, a Golay cell and a pyroelectric detector. An emitted power as high as 0.06mW was detected from Bi2212 mesas. For the first time, most of the pumped power was extracted as THz emission from a Bi2212 mesa. The radiation at 0.54THz was detected using the Michelson interferometric setup.Conference Object Fabrication of Double Mesa Structures by E-Beam Lithography From High Temperature Superconducting Bi2sr2cacu2o 8+? (bi2212) for Powerful Terahertz Emission(Institute of Electrical and Electronics Engineers Inc., 2011) Demirhan, Yasemin; Türkoğlu, Fulya; Köseoğlu, Hasan; Minematsu, M.; Araki, H.; Miyakawa, Nobuaki; Özyüzer, LütfiWe work on a frequency tunable solid state device to meet the needs of continuous, coherent, powerful terahertz emission sources that fill practically important terahertz gap. High temperature superconducting (HTS) coherently oscillating Josephson junctions in Bi2Sr2CaCu 2O8+δ (Bi2212) crystal make this approach very promising. Since doping dependence of Bi2212 is an important parameter, Bi2212 crystals are annealed in vacuum or purified argon gas flow at 425°C. For further processing we pattern both single and double rectangular mesa structures by using electron beam lithography on the cleaved surface of the crystal. Resistance-temperature (R-T), and current-voltage behavior (I-V) measurements achieved. © 2011 IEEE.Conference Object Terahertz Wave Emission From Layered Superconductors: Interferometer Measurements(Institute of Electrical and Electronics Engineers Inc., 2011) Özyüzer, Lütfi; Türkoğlu, Fulya; Demirhan, Yasemin; Köseoğlu, Hasan; Preu, S.; Ploss, D.; Malzer, S.; Şimşek, Yılmaz; Wang, Huabing; Müller, P.Rectangular Bi2Sr2CaCu2O 8+δ (Bi2212) mesa structures were fabricated on as-grown Bi2212 single crystal superconductors using standard photolithography and Ar ion beam etching techniques. We have performed c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometer measurements. Furthermore, in contrast to previous studies, the emission frequency was determined using interferometer set up instead of FTIR. The interference patterns were detected outside the cryostat after traveling long way through ambient space. The emission frequency calculated by Fourier transform of interference data is consistent with Josephson frequency-voltage relation. © 2011 IEEE.
