Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Influence of Fluorine on Structural and Electrical Properties of VO2 Thin Films Deposited by Magnetron Sputtering(Elsevier Ltd, 2025) Akyurek, Bora; Cantas, Ayten; Demirhan, Yasemin; Ozyuzer, Lutfi; Aygun, GulnurThis study investigates whether fluorine-based thermal gel used during electrical measurements of vanadium oxide (VO2) films influences the structural, morphological, or compositional integrity of the films. High-quality VO2 films with a resistance ratio change of about 10(4) for metal-insulator transition were deposited by magnetron sputtering. During electrical characterization, VO2 film was heated from room temperature to similar to 370 K with a fluorine-based thermal gel usage to achieve better heat contact between the film and substrate holder. Structural and chemical properties were assessed through XRD, Raman, XPS, SEM, and energy dispersive spectroscopy imaging. XRD revealed diffraction peaks consistent with monoclinic VO2 confirming that the crystal lattice remains the same although fluorine based thermal gel was used. Raman spectra exhibited vibrational modes indicating that the phonon structure of VO2 was preserved despite fluorine gel usage. XPS results showed only a minor F 1s signal (2.8%) limited only to the film surface. SEM and EDS analyses further confirmed that surface morphology and elemental composition remained belonging to VO2 film. These findings demonstrate that the usage of fluorine-based thermal gel results in only a minimal surface interaction, thereby preserving intrinsic material properties of VO2 and supporting a potential usage for future device fabrication applications.Article Citation - WoS: 4Citation - Scopus: 4Vo<sub>2</Sub>-based Dynamic Coding Metamaterials for Terahertz Wavefront Engineering(Springer, 2025) Akyurek, Bora; Noori, Aileen; Demirhan, Yasemin; Ozyuzer, Lutfi; Guven, Kaan; Altan, Hakan; Aygun, GulnurDigital coding metasurfaces (DCMS) offer a promising alternative to conventional metasurface designs for achieving common functionalities by controlling the phase of reflected or transmitted electromagnetic waves. Their simple unit cell designs allow for scalability across the THz spectrum and facilitate large-area fabrication. The true potential of DCMS lies in dynamical coding, which enables real-time reconfigurability through a tuning and/or switching mechanism. In this study, metasurfaces that achieve 1-bit dynamic coding of unit cells via thermally induced metal-insulator transition of VO2 layers are designed and fabricated. We investigate experimentally the beam splitting functionality at certain frequencies in the 0.50-0.75 THz range reflected from the stripe- and checkerboard patterned metasurface samples, and demonstrate the switching of this functionality under thermal illumination.Article Citation - WoS: 6Citation - Scopus: 6Nanolitography Based on Electrospun and Etched Nanofibers(Elsevier, 2021) Noori, Aileen; Döğer, Hilal; Demirhan, Yasemin; Özdemir, Mehtap; Özyüzer, Lütfi; Aygün, Gülnur; Sağlam, ÖzgeIn this study, we propose a new type of nanolithography procedure to fabricate orderly patterned metallic nanostructures using the electrohydrodynamic method and the reactive ion etching process. The electrohydrodynamic process parameters were tuned so as to create patterning with precision, and fibers in nanoscale on silver-coated substrates. We also studied reactive ion etching with different durations on the well-patterned samples. The experiments show that applying a voltage of 400 V resulted in straight patterned fibers with a diameter of 208.7 ? 30.3 nm. The statistical analysis on scanning electron microscope (SEM) images showed a significant difference in the diameter of the fibers fabricated at 400 V compared to those at 500 V and 600 V. We also confirm that the etching process has no affect on the fiber diameter. Moreover, electron dispersive X-Ray spectrometer (EDX) results suggest that an etching duration of 7 min is sufficient to remove the silver coating that is not covered with the fibers, and protect the silver nanostructures underneath the fibers. Utilizing a lowcost nanolithography procedure, we obtain the orderly patterned silver nanostructures for possible integration into miniaturized devices.Article Citation - WoS: 2Citation - Scopus: 2In-Situ Thin Film Copper-Copper Thermocompression Bonding for Quantum Cascade Lasers(Springer, 2021) Rouhi, Sina; Özdemir, Mehtap; Ekmekçioğlu, Merve; Yiğen, Serap; Demirhan, Yasemin; Szerling, Anna; Kosiel, Kamil; Kozubal, Maciej; Kruszka, Renata; Prokaryn, Piotr; Ertuğrul, Mehmet; Reno, John L.; Aygün, Gülnur; Özyüzer, LütfiThe choice of metals, bonding conditions and interface purity are critical parameters for the performance of metal-metal bonding quality for quantum cascade lasers (QCLs). Here, we present a novel approach for the thermocompression bonding of Cu-Cu thin films on GaAs-based waveguides without having any oxide phase, contamination or impurities at the interface. We designed a hybrid system in which magnetron sputtering of Ta, thermal evaporation of Cu and Cu-Cu thermocompression bonding processes can be performed sequentially under high vacuum conditions. GaAs/Ta/Cu and Cu/Ta/GaAs structures were thermocompressionally bonded in our in-situ homebuilt bonding system by optimizing the deposition parameters and bonding conditions. The grown thin film and the obtained interfaces were characterized using x-ray diffraction (XRD), scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDX) techniques. The optimum Ta and Cu films' thicknesses were found to be about 20 nm and 500 nm, respectively. EDX analysis showed that the Ta thin film interlayer diffused into the Cu structure, providing better adhesivity and rigidity for the bonding. Additionally, no oxidation phases were detected at the interface. The best bonding quality was obtained when heated up to 430 degrees C with an applied pressure of 40 MPa during bonding process.Article Citation - WoS: 21Citation - Scopus: 22Investigation of Electron Beam Lithography Effects on Metal-Insulator Transition Behavior of Vanadium Dioxide(IOP Publishing Ltd., 2017) Yüce, Hürriyet; Alaboz, Hakan; Demirhan, Yasemin; Özdemir, M.; Özyüzer, Lütfi; Aygün, GülnurVanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.Article Citation - WoS: 13Citation - Scopus: 13Fourcross Shaped Metamaterial Filters Fabricated From High Temperature Superconducting Ybco and Au Thin Films for Terahertz Waves(IOP Publishing Ltd., 2017) Demirhan, Yasemin; Alaboz, Hakan; Nebioğlu, Mehmet Ali; Mulla, B.; Akkaya, M.; Altan, Hakan; Sabah, Cumali; Özyüzer, LütfiIn this study, we present a new, unique fourcross shaped metamaterial terahertz (THz) filter fabricated from both gold thin films and YBa2Cu3O7-δ high Tc superconducting thin films. A commercial electromagnetic simulation software, CST Microwave Studio, is used to design and optimize the metamaterial filter structures. The proposed fourcross shaped rectangular filter structure consists of periodic metallic rings where strip lines are located at the sides of the ring. Fourcross metamaterial filters are fabricated by using e-beam lithography and ion beam exhing techniques. Terahertz time-domain spectroscopy measurements validated the design predictions for both the center frequencies and bandwidths of the resonances due to the fourcross structures. The resonance switching of the transmission spectra was investigated by lowering the temperature below the critical transition temperature. This resonance switching effect is not observed in filters made up of metals. This novel fourcross rectangular resonator with a temperature-dependent resonance behavior holds great potential for active, tunable and low loss THz devices for imaging, sensing, and detection applications.Article Citation - WoS: 20Citation - Scopus: 20Area Dependence and Influence of Crystal Inhomogeneity on Superconducting Properties of Bi2212 Mesa Structures(Elsevier Ltd., 2015) Demirhan, Yasemin; Sağlam, Hilal; Türkoğlu, Fulya; Alaboz, Hakan; Özyüzer, Lütfi; Miyakawa, Nobuaki; Kadowaki, K.The rapid increase in applications of terahertz waves requires new techniques to obtain continuous wave terahertz sources. Mesa structures fabricated from high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) single crystal have been observed as an intense, coherent, continuous electromagnetic wave source in the terahertz (THz) frequency region. However, in order to produce coherent radiation with high applicable power, we need large mesa structures that enter a collective electromagnetic state in which their oscillations are largely synchronized in phase. On the other hand, large mesa structures cause a heating problem. In this study, we report on the critical current density dependence of mesa area and the crystal inhomogeneity to understand heating problems in large area mesas for terahertz radiation. Since the doping dependence of Bi2212 is an important parameter, the as-grown Bi2212 crystals were heat-treated at various temperatures under vacuum conditions. We have fabricated triple mesa structures from Bi2212 single crystal using e-beam lithography and argon ion beam etching techniques with same area and with different area on the same chip. We investigated and compared characteristics of triple mesas which are on the same chip and next to each other. In this way, we searched the crystal inhomogeneity in triple mesa structures and studied the critical current density dependence of mesa area to obtain high emission power for the THz radiation. Our experimental results clearly show that the Josephson critical current density is decreasing when the area of mesa is increasing. © 2015 Elsevier Ltd. All rights reserved.Article Citation - WoS: 39Citation - Scopus: 40Interferometer Measurements of Terahertz Waves From Bi 2sr 2cacu 2o 8+d Mesas(IOP Publishing Ltd., 2012) Türkoğlu, Fulya; Köseoğlu, Hasan; Demirhan, Yasemin; Özyüzer, Lütfi; Preu, Sascha; Malzer, Stefan; Şimşek, Yusuf; Müller, P.; Yamamoto, T.; Kadowaki, K.We fabricated rectangular mesa structures of superconducting Bi 2Sr 2CaCu 2O 8+d (Bi2212) using e-beam lithography and Ar ion beam etching techniques for terahertz (THz) emission. c-axis resistance versus temperature (R-T), current-voltage (I-V) characteristics and bolometric THz power measurements were performed to characterize Bi2212 mesas. The emission frequency of mesas was determined using a Michelson interferometer setup which also demonstrates polarized emission. Interference patterns of THz radiation from Bi2212 mesas were detected by various detectors such as a liquid helium cooled silicon composite bolometer, a Golay cell and a pyroelectric detector. An emitted power as high as 0.06mW was detected from Bi2212 mesas. For the first time, most of the pumped power was extracted as THz emission from a Bi2212 mesa. The radiation at 0.54THz was detected using the Michelson interferometric setup.