Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 32Citation - Scopus: 33Variation of Structural and Optical Properties of Tio2 Films Prepared by Dc Magnetron Sputtering Method With Annealing Temperature(Elsevier Ltd., 2020) Gürakar, Sibel; Ot, Hakan; Horzum, Şeyda; Serin, TülayTiO2 thin films are deposited by direct current magnetron sputtering method on the silicon and quartz substrates. The effect of annealing temperature on the film properties are analysed by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical spectroscopy measurements. Raman and XRD results reveal that the crystal structure of the TiO2 film is strongly affected by the annealing temperature. The crystal structure of the coated film is changed from amorphous to anatase structure after annealing at 500 degrees C. Anatase and rutile phases of TiO2 start to coexist after annealing at 800 degrees C. Rutile phases of TiO2 become dominant for film annealed at 900 degrees C. SEM and AFM images uncover that the morphology, grain size and surface roughness of TiO2 films vary with the annealing temperature. The optical band gap decreases from 3.35 to 2.90 eV as the phase transforms from amorphous to rutile.Article Citation - WoS: 7Citation - Scopus: 8Investigation of the Structural and Optical Properties of Copper-Titanium Oxide Thin Films Produced by Changing the Amount of Copper(Elsevier Ltd., 2019) Horzum, Şeyda; Gürakar, Sibel; Serin, TülayWe examine how the structural, morphological and optical properties of TiO2 thin films are changed with heavily copper (Cu) content. Variations in characteristic properties of the films with 0, 12.5, 25 and 50 wt% Cu contents, grown by sol-gel dip coating method, are observed by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy, energy dispersive X-ray analysis and optical spectroscopy measurements. The XRD and Raman spectra indicate that pure TiO2 film forms in the anatase structure. At high Cu concentrations, XRD results also reveal the substitution of Ti with Cu and formation of extra compound Copper-Titanium oxide. Raman measurements also show that Cu is incorporated homogeneously into TiO2 matrix up to 12.5 wt% concentration and this uniformity is distorted at higher Cu contents. In addition, optical spectroscopy measurements show that the optical band gap energy decreases from 3.26 eV to 2.05 eV with increasing Cu concentration. Furthermore, it is observed that the refractive index values obtained by means of transmittance spectra at 550 nm wavelength; increases from 2.47 to 3.39 when the Cu concentration increases from 0 to 50 wt %.Article Citation - WoS: 40Citation - Scopus: 40Nitrogenated, Phosphorated and Arsenicated Monolayer Holey Graphenes(Royal Society of Chemistry, 2015) Yağmurcukardeş, Mehmet; Horzum, Şeyda; Torun, Engin; Peeters, François M.; Senger, Ramazan TuğrulMotivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C2N) [Mahmood et al., Nat. Commun., 2015, 6, 6486], the electronic, magnetic, and mechanical properties of nitrogenated (C2N), phosphorated (C2P) and arsenicated (C2As) monolayer holey graphene structures are investigated using first-principles calculations. Our total energy calculations indicate that, similar to the C2N monolayer, the formation of the other two holey structures are also energetically feasible. Calculated cohesive energies for each monolayer show a decreasing trend going from the C2N to C2As structure. Remarkably, all the holey monolayers considered are direct band gap semiconductors. Regarding the mechanical properties (in-plane stiffness and Poisson ratio), we find that C2N has the highest in-plane stiffness and the largest Poisson ratio among the three monolayers. In addition, our calculations reveal that for the C2N, C2P and C2As monolayers, creation of N and P defects changes the semiconducting behavior to a metallic ground state while the inclusion of double H impurities in all holey structures results in magnetic ground states. As an alternative to the experimentally synthesized C2N, C2P and C2As are mechanically stable and flexible semiconductors which are important for potential applications in optoelectronics.