Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 5Citation - Scopus: 5Comparison of Characteristic Properties of Al, Ga, and In-Doped Zno Thin Films Formed by Sol-Gel Method(Academic Press, 2021) Horzum, Şeyda; Bulduk, Emel; Şener, Deniz; Serin, TülayHerein, we examine the effect of doping with Indium (In), Gallium (Ga), and Aluminum (Al) (group III elements) on the structural, optical, and vibrational properties of ZnO thin films. The characteristic properties of the ZnO films prepared by the sol-gel dip-coating method are explored by utilizing X-ray diffraction, optical spectroscopy, and Raman scattering measurements. XRD analyzes exhibit that the crystallite size reduces upon doping by Ga and Al, while it increases with In, and all films have hexagonal wurtzite structure. Additionally, Raman measurements indicate that the dominant two peaks at around 104 and 445 cm(-1) are related to E(2)(low )and E-2(high) phonon modes of ZnO, respectively. The low-frequency mode (E-2(low)) is affected by dopant atoms, whereas the high-frequency mode (E-2(high)) of the wurtzite phase is not influenced by the dopant. Moreover, E-dop.atom phonon mode appears at low frequencies and the intensity ratio, I(E-dop.atom)/I(E(2)low), decreases as the ionic radius of dopant atoms increases. UV-Vis spectra reveal that the film transparency, optical band gap, Urbach energy, and refraction index can be effectively tuned by dopant atoms.Article Citation - WoS: 32Citation - Scopus: 33Variation of Structural and Optical Properties of Tio2 Films Prepared by Dc Magnetron Sputtering Method With Annealing Temperature(Elsevier Ltd., 2020) Gürakar, Sibel; Ot, Hakan; Horzum, Şeyda; Serin, TülayTiO2 thin films are deposited by direct current magnetron sputtering method on the silicon and quartz substrates. The effect of annealing temperature on the film properties are analysed by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical spectroscopy measurements. Raman and XRD results reveal that the crystal structure of the TiO2 film is strongly affected by the annealing temperature. The crystal structure of the coated film is changed from amorphous to anatase structure after annealing at 500 degrees C. Anatase and rutile phases of TiO2 start to coexist after annealing at 800 degrees C. Rutile phases of TiO2 become dominant for film annealed at 900 degrees C. SEM and AFM images uncover that the morphology, grain size and surface roughness of TiO2 films vary with the annealing temperature. The optical band gap decreases from 3.35 to 2.90 eV as the phase transforms from amorphous to rutile.Article Citation - WoS: 50Citation - Scopus: 52Monitoring the Characteristic Properties of Ga-Doped Zno by Raman Spectroscopy and Atomic Scale Calculations(Elsevier, 2019) Horzum, Şeyda; İyikanat, Fadıl; Senger, Ramazan Tuğrul; Çelebi, Cem; Sbeta, Mohamed; Yıldız, Abdullah; Serin, TülayWe experimentally and theoretically study how the structural and vibrational properties of zinc oxide (ZnO) are modified upon Gallium (Ga) doping. The characteristics of Ga-doped ZnO thin films which are synthesized by sol-gel spin coating method on glass substrates are monitored by using X-ray diffraction (XRD) and Raman scattering measurements. For atomic-level understanding of the experimental findings state-of-the-art density functional theory (DFT) based calculations are also performed. DFT calculations reveal that both the substitution and adsorption of Ga atoms in ZnO are energetically possible and substitutional doping in ZnO is the most favourable scenario. XRD measurements show that all the films are in wurtzite structure and the crystallite size of the films decreases with increasing Ga doping. In addition, Raman analysis show that strong vibrational modes at about 100 and 441 cm(-1) are associated with E-2(low) and E-2(high) phonon branches of ZnO, respectively. While the frequency of the E-2(low) mode downshifts with increasing Ga concentration, the E-2(high) phonon mode is not affected by the Ga doping. Furthermore, E-Ga phonon branch, stemming from the substituted Ga atoms, emerges at low frequencies. It is also seen that the Raman intensity of the E-G(a) peak linearly increases with increasing Ga concentration. Experimental results on the vibrational properties are in good agreement with the ab initio phonon calculations. (C) 2018 Elsevier B.V. All rights reserved.Article Citation - WoS: 40Citation - Scopus: 40Nitrogenated, Phosphorated and Arsenicated Monolayer Holey Graphenes(Royal Society of Chemistry, 2015) Yağmurcukardeş, Mehmet; Horzum, Şeyda; Torun, Engin; Peeters, François M.; Senger, Ramazan TuğrulMotivated by a recent experiment that reported the synthesis of a new 2D material nitrogenated holey graphene (C2N) [Mahmood et al., Nat. Commun., 2015, 6, 6486], the electronic, magnetic, and mechanical properties of nitrogenated (C2N), phosphorated (C2P) and arsenicated (C2As) monolayer holey graphene structures are investigated using first-principles calculations. Our total energy calculations indicate that, similar to the C2N monolayer, the formation of the other two holey structures are also energetically feasible. Calculated cohesive energies for each monolayer show a decreasing trend going from the C2N to C2As structure. Remarkably, all the holey monolayers considered are direct band gap semiconductors. Regarding the mechanical properties (in-plane stiffness and Poisson ratio), we find that C2N has the highest in-plane stiffness and the largest Poisson ratio among the three monolayers. In addition, our calculations reveal that for the C2N, C2P and C2As monolayers, creation of N and P defects changes the semiconducting behavior to a metallic ground state while the inclusion of double H impurities in all holey structures results in magnetic ground states. As an alternative to the experimentally synthesized C2N, C2P and C2As are mechanically stable and flexible semiconductors which are important for potential applications in optoelectronics.