Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 60Citation - Scopus: 66Preparation and Characterization of Calcium Stearate Powders and Films Prepared by Precipitation and Langmuir-Blodgett Techniques(American Chemical Society, 2010) Gönen, Mehmet; Öztürk, Serdar; Balköse, Devrim; Okur, Salih; Ülkü, SemraThe preparation of calcium stearate (CaSt2) using precipitation and Langmuir-Blodgett techniques was investigated in this study. While sodium stearate and calcium chloride were used in the precipitation process, calcium stearate nanofilms were produced from stearic acid and calcium chloride in sodium borate buffer with the Langmuir-Blodgett technique. Fourier transform infrared (FTIR) spectroscopy indicated carboxylate bands at 1577 and 1543 cm-1 in equal intensity in the powder form, but the films had a higher intensity 1577 cm-1 band than the 1543 cm-1 band. This showed the calcium ions associated with the COO- ions in the monodendate and bidendate structures in powders, and it was mainly in the bidendate structure in films. While characteristic peaks of CaSt2 at 2θ values of 6.40° and 19.58° were obtained in the X-ray diffraction (XRD) pattern of the dried powdered product, no sharp peaks were present in the 13 layer CaSt2 film. From scanning electron microscopy (SEM) micrographs, it was seen that calcium stearate powder had lamellar structure and the average particle size was 600 nm. The AFM picture of the CaSt2 film indicated the surface was not smooth with a peak to valley distance of 6 nm. © 2010 American Chemical Society.Article Citation - WoS: 22Citation - Scopus: 24Preparation of the Ferrocene-Substituted 1,3-Distal P-Tert Based Qcm Sensors Array and Utilization of Its Gas-Sensing Affinities(Elsevier Ltd., 2014) Sayın, Serkan; Özbek, Cebrail; Okur, Salih; Yılmaz, MustafaThe article describes the synthesis of the new ferrocene-substituted calix[4]arene derivative 4 as sensitive layer, and suggests that the immobilization of it is on a quartz crystal microbalance gold electrode via the drop-casting method in order to produce the calix[4]arene-based QCM sensor. In addition, sensor response of the calix[4]arene-based QCM sensor was investigated towards carbon dioxide (CO2) and carbon monoxide (CO). The sensing and selectivity studies show that the ferrocene-substituted calix[4]arene-based QCM sensor is an effective gas sensor toward both carbon dioxide and carbon monoxide.Article Citation - WoS: 36Citation - Scopus: 38Humidity Sensing Properties of Cds Nanoparticles Synthesized by Chemical Bath Deposition Method(American Chemical Society, 2011) Demir, Ramazan; Okur, Salih; Şeker, Mavişe; Zor, MuhsinThin films of CdS nanoparticles were synthesized by the chemical bath deposition (CBD) technique to investigate humidity response characteristics. The morphology and the crystal structure of CdS thin films were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The quartz crystal microbalance (QCM) technique was used to measure the water vapor adsorption and desorption rates of CdS thin films. The dynamic Langmuir model was used to analyze the kinetics of the moisture adsorption and desorption process under relative humidity (RH) between 17 and 85% RH. Our results indicate that CdS thin films have a great affinity to humidity at room temperature.Article Citation - WoS: 3Citation - Scopus: 3Synthesis and Raman Spectroscopic Investigation of a New Self-Assembly Monolayer Material 4-[n Acid for Organic Light-Emitting Devices(John Wiley and Sons Inc., 2011) Kurt, Mustafa; Okur, Salih; Demiç, Şerafettin; Karpagam, J.; Sundaraganesan, N.We have synthesized 4-[N-phenyl-N-(3-methylphenyl)-amino]-benzoic acid (4-[PBA]) and investigated its molecular vibrations by infrared and Raman spectroscopies as well as by calculations based on the density functional theory (DFT) approach. The Fourier transform (FT) Raman, dispersive Raman and FT-IR spectra of 4-[PBA] were recorded in the solid phase. We analyzed the optimized geometric structure and energies of 4-[PBA] in the ground state. Stability of the molecule arising from hyperconjugative interactions and charge delocalization was studied using natural bond orbital analysis. The results show that change in electron density in the δ* and π* antibonding orbitals and E 2 energies confirm the occurrence of intramolecular charge transfer within the molecule. Theoretical calculations were performed at the DFT level using the Gaussian 09 program. Selected experimental bands were assigned and characterized on the basis of the scaled theoretical wavenumbers by their total energy distribution. The good agreement between the experimental and theoretical spectra allowed positive assignment of the observed vibrational absorption bands. Finally, the calculation results were applied to simulate the Raman and IR spectra of the title compound, which show agreement with the observed spectra.Article Citation - WoS: 35Citation - Scopus: 37Modification of Ito Surface Using Aromatic Small Molecules With Carboxylic Acid Groups for Oled Applications(Elsevier Ltd., 2011) Havare, Ali Kemal; Can, Mustafa; Demiç, Şerafettin; Okur, Salih; Kuş, Mahmut; Aydın, Hasan; Yağmurcukardeş, Nesli; Tarı, Süleyman4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) was synthesized in order to facilitate the hole-injection in Organic Light Emitting Diodes (OLED). MPPBA was applied to form self-assembled monolayer (SAM) on indium tin oxide (ITO) anode to align energy-level at the interface between organic semiconductor material (TPD) and inorganic anode (ITO) in OLED devices. The modified surface was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). KPFM was used to measure the surface potential and work function between the tip and the ITO surface modified by SAM technique using MPPBA. The OLED devices (ITO/MPPBA/TPD/Alq3/Al) fabricated with SAM-modified ITO substrates showed lower turn-on voltages and enhanced diode current compare to the OLED devices fabricated with bare ITO substrates.Article Citation - WoS: 39Citation - Scopus: 43Synthesis and Humidity Sensing Analysis of Zns Nanowires(Elsevier Ltd., 2012) Okur, Salih; Üzar, Neslihan; Tekgüzel, Nesli; Erol, Ayşe; Arıkan, M. ÇetinZnS nanowires synthesized by the vapor-liquid-solid (VLS) method and humidity sensing properties of obtained ZnS nanowires were investigated by quartz crystal microbalance (QCM) method and electrical measurements. The synthesized nanowires were exposed to relative humidity (RH) between 22% and 97% under controlled environment. Our experimental results show that ZnS nanowires have a great potential for humidity sensing applications in room temperature operations. © 2010 Elsevier B.V. All rights reserved.Article Citation - WoS: 45Citation - Scopus: 43Analysis of Electronic Parameters and Interface States of Boron Dispersed Triethanolamine/P-si Structure by Afm, I-V, C-V and G/?-v-f Techniques(Elsevier Ltd., 2010) Yakuphanoğlu, Fahrettin; Okur, SalihThe electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/ω-V-f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by atomic force microscopy. The atomic force microscopy results show a homogenous distribution of boron particles in triethanolamine film. The electronic parameters (barrier height, ideality factor and average series resistance) obtained from I-V characteristics of the diode are 0.81 eV, 2.07 and 5.04 kΩ, respectively. The interface state density of the diode was found to be 2.54 × 1010 eV- cm-2 under Vg = 0. The obtained Dit values obtained from C-V and G/ω measurements are in agreement with each other. The profile of series resistance dependent on voltage and frequency confirms the presence of interface states in boron dispersed triethanolamine/p-Si structure. It is evaluated that the boron dispersed triethanolamine controls the electronic parameters and interface properties of conventional Al/p-Si diode. © 2009 Elsevier B.V. All rights reserved.Article Citation - WoS: 36Citation - Scopus: 36High-Mobility Pentacene Phototransistor With Nanostructured Sio2 Gate Dielectric Synthesized by Sol-Gel Method(Elsevier Ltd., 2010) Okur, Salih; Yakuphanoğlu, Fahrettin; Stathatos, E.We have fabricated a pentacene based phototransistor by employing a modified nanostructured SiO2 gate dielectric. The photosensing properties of the pentacene thin film transistor fabricated on n-Si substrate with nanostructured SiO2 as gate dielectric have been investigated. The photocurrent of the transistor increases with an increase in illumination intensity. This suggests that the pentacene thin film transistor behaves as a phototransistor with p-channel characteristics. The photosensitivity and responsivity values of the transistor are 630.4 and 0.10 A/W, respectively at the off state under AM 1.5 light illumination. The field effect mobility of the pentacene phototransistor was also found to be 2.96 cm2/Vs. The nanostructured surface of the gate possibly is the cause of the high-mobility value of the phototransistor due to light scattering from the increased surface area. Crown Copyright © 2009.Article Citation - WoS: 12Citation - Scopus: 15Local Oxidation Nanolithography on Hf Thin Films Using Atomic Force Microscopy (afm)(IOP Publishing Ltd., 2009) Büyükköse, Serkan; Okur, Salih; Özyüzer, Gülnur AygünWell controlled Hf oxide patterns have been grown on a flat Hf thin film surface produced by the dc magnetron sputtering method on Si and SiOx substrates. These patterns have been created by using the technique of semi-contact scanning probe lithography (SC-SPL). The thickness and width of the oxide patterns have been measured as a function of applied voltage, duration and relative humidity. There is a threshold voltage even at 87% humidity, due to insufficient energy required to start the oxide growth process for a measurable oxide protrusion. Electrical characterization was also performed via the I-V curves of Hf and HfOx structures, and the resistivity of HfO x was found to be 4.284 × 109 Ω cm. In addition to the I-V curves, electric force microscopy and spreading surface resistance images of Hf and HfOx were obtained.Article Citation - WoS: 43Citation - Scopus: 45Electrical and Interface Properties of Au/Dna Organic-On Structures(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, Fahrettin; Özsöz, Mehmet; Kadayıfçılar, Pınar KaraThe effect of the thickness and coverage rate of a DNA film on the electrical and interface properties of Au/DNA/n-Si organic-on-inorganic structures has been investigated. The thin film properties of the DNA deposited on n-Si wafer were characterized by atomic force microscopy. The effect of the thickness and coverage rate of the DNA layer was investigated by evaluating electrical parameters, such as the barrier height, ideality factor, series resistance, and interface state density. The thickness and coverage rate of the DNA layer significantly affects the electrical properties of the Au/DNA/n-Si organic-on-inorganic structures. The interface state density properties of the Au/DNA/n-Si diodes were determined by conductance technique. The results show that the interface state density decreases with decrease in both film thickness and coverage rate of the DNA in an acetate buffer, modifying the electronic parameters of the Au/DNA/n-Si diodes.