Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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Author: search.filters.author.Utlu, GökhanPublisher: search.filters.publisher.Elsevier

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  • Article
    Citation - WoS: 10
    Citation - Scopus: 10
    The Comparison of Transient Photocurrent Spectroscopy Measurements of Pulsed Electron Deposited Zno Thin Film for Air and Vacuum Ambient Conditions
    (Elsevier, 2019) Özdoğan, Mehmet; Yiğen, Serap; Çelebi, Cem; Utlu, Gökhan
    Photoconduction mechanism of ZnO thin films that produced by Pulsed Electron Deposition method is systematically investigated by taking Transient Photocurrent Spectroscopy measurements for different atmospheres including high vacuum and air environments. Response and recovery rates of photocurrent in the air are faster than the rates in high vacuum condition. The results in the presented work clearly indicate that the photoconduction of ZnO thin films with high surface-area-to-volume ratio are surface-related and mostly governed by adsorption/desorption of oxygen and water molecules in the atmosphere. Therefore, the high surface interaction tendency of ZnO surface with the atmosphere inevitably leads to charge transfer from surface to adsorbates and/or vice versa.
  • Article
    Citation - WoS: 22
    Citation - Scopus: 27
    Mechanisms Behind Slow Photoresponse Character of Pulsed Electron Deposited Zno Thin Films
    (Elsevier, 2020) Özdoğan, Mehmet; Çelebi, Cem; Utlu, Gökhan
    Semiconducting Zinc Oxide (ZnO) is ideal candidate for ultraviolet (UV) photodetector due to its promising optoelectronic properties. Photoconductive type ZnO photodetectors, which is fabricated in metal-semiconductor-metal configuration, show mostly very high photoconductivity under UV light, but they are plagued by slow photoresponse time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time. There are also limited studies, which claim that the defect states acting as hole trap centers prolong response time significantly. However, the underlying physical mechanism is still unclear. Here we study the effects of both adsorbates and defect-related states on the photoresponse character of Pulsed Electron Deposited ZnO thin films. In order to distinguish between these two mechanisms, we have compared the time-dependent photoresponse measurements of bare-ZnO and SiO2 encapsulated-ZnO thin film samples taken under UV light and high vacuum. We show that the dominant mechanism of photoresponse in ZnO is the adsorption/desorption of oxygen and water molecules even when the measurement is performed in high vacuum. After the encapsulation of sample surface by a thin SiO2 layer, the adsorption/desorption rates can significantly improve, and the effects of these molecules partially removed.