Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 4Citation - Scopus: 5Enhanced Optoelectronic Properties of Magnetron Sputtered Ito/Ag Multilayers by Electro-Annealing(AVS, 2022) Uyanık, Zemzem; Türkoğlu, Fulya; Köseoğlu, Hasan; Ekmekçioğlu, Merve; Ata, Bengü; Demirhan, Yasemin; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIndium tin oxide/silver/indium tin oxide (ITO/Ag/ITO) multilayers have attracted much attention to fulfill the growing need for high-performance transparent conducting oxide electrodes. To make these transparent multilayers work better, electro-annealing, which is a method of self-heating by electric current, can be effective. Moreover, the effect of current on ITO/Ag/ITO multilayers should be investigated to make sure that electronic devices will be reliable over their lifetime. In this study, ITO/Ag/ITO multilayer electrodes with varying Ag thicknesses were grown by DC magnetron sputtering at room temperature. Structural, optical, and electrical properties of these multilayers were investigated before and after electro-annealing. Measurement results revealed that improved optical transmittance and sheet resistance can be obtained by the optimization of Ag thickness for the as-grown ITO/Ag/ITO layers. The highest figure of merit (FoM) value of 17.37 × 10−3 Ω−1 with optical transmittance of 85.15% in the visible region and sheet resistance of 11.54 Ω/□ was obtained for the Ag thickness of 16.5 nm for as-grown samples. The electro-annealing of as-grown ITO/Ag/ITO multilayers led to improved optical behavior of the multilayer structure over a wide spectral range, especially in the near-infrared range. Electro-annealing also provided an improvement in the crystallinity and sheet resistance of the electrodes. The improvement of the electrical and optical properties of the structure enabled a FoM of 23.07 × 10−3 Ω−1 with the optical transmittance of 86.80% in the visible region and sheet resistance of 10.52 Ω/□. The findings of this work provide proper knowledge of the properties of ITO/Ag/ITO multilayers under electrical current and suggest that the overall performance of the multilayers can be improved by the electro-annealing process.Conference Object Spin Polarized Tunneling in Large Area Mesas of Superconducting Bi 2sr2cacu2o8+δ for the Generation of the Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Türkoğlu, Fulya; Şimşek, Yılmaz; Köseoğlu, Hasan; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiRectangular intrinsic Josephson junction mesa structures of superconducting Bi2Sr2CaCu2O8+delta (Bi2212) can be used as a source of continuous, coherent and polarized terahertz (THz) radiation. THz emitting mesas are below a certain underdoped level of Bi2212. They have small Josephson critical current in contrast to optimally doped and overdoped Bi2212. We deposited Au/Co/Au multilayer top of mesa and obtained small critical current from mesas fabricated by as-grown Bi2212 single crystals due to injection of spin polarized current. The spin injection eliminates adjustment of doping level for successful THz emission.Conference Object Reactive Ion Beam Etching of Superconducting Bi2212 by Ta/Pr and Pr'/ta/pr Masks for the Generation of Thz Waves(Institute of Electrical and Electronics Engineers Inc., 2009) Köseoğlu, Hasan; Türkoğlu, Fulya; Demirhan, Yasemin; Meriç Polster, Zeynep; Özyüzer, LütfiGeneration of powerful THz radiation from intrinsic Josephson Junctions (Ills) of Bi(2)Sr(2)CaCu(2)O(8+delta) (Bi2212) may require mesas with large lateral dimension. However, there are difficulties in fabrication of perfect rectangular mesas. Mesa lateral angles should be close to 90 degrees to obtain IJJs with same planar dimensions for synchronization of IJJs. Since thick photoresist (PR) layer shades the lateral dimension of mesa during ion beam etching, we patterned Ta/PR and PR'/Ta/PR masks on Bi2212 and used selective ion etching to overcome this problem. The reactive ion beam etchings have done with ion beam of Ar, N(2) and O(2) and we have obtained mesas about 1 mu m with lateral angle of approximately 50 to 75 degrees which is better than the mesas fabricated with single layer mask.Article Citation - WoS: 31Citation - Scopus: 33The Controllable Deposition of Large Area Roll-To Sputtered Ito Thin Films for Photovoltaic Applications(Elsevier, 2020) Demirhan, Yasemin; Köseoğlu, Hasan; Türkoğlu, Fulya; Uyanık, Zemzem; Özdemir, Mehtap; Aygün, Gülnur; Özyüzer, LütfiIn the present study, using a large area roll-to-roll DC magnetron sputtering system deposition of ITO thin films on polyethylene terephthalate (PET) substrates were achieved. In order to investigate the effect of growth conditions on the film properties all through the deposition process, optical emission spectroscopy (OES) analysis have been accomplished in a governable way. The consequences of Oxygen partial pressure and film thickness on electrical, and optical properties of the films were determined. It was shown that the intensity of optical emission peaks are subjected to the discharge power and as well as the O-2/Ar flow ratio. Large area, uniform ITO films with relatively high transparency and low electrical resistivity (R(2)(<)50 Omega/sqr) were succesfully deposited on PET substrates. The significance of both the figure of merit (FOM) and the optical band gap values on the performance of different TCO thin films were addressed. In this work, the obtained results suggest that the overall performance is sufficient to implement the ITO films in photovoltaic and OLED applications. (C) 2019 Elsevier Ltd. All rights reserved.Article Citation - WoS: 21Citation - Scopus: 24Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices(Elsevier Ltd., 2019) Türkoğlu, Fulya; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, GülnurCopper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.Article Citation - WoS: 15Citation - Scopus: 17Effect of Substrate Rotation Speed and Off-Center Deposition on the Structural, Optical, and Electrical Properties of Azo Thin Films Fabricated by Dc Magnetron Sputtering(American Institute of Physics, 2018) Türkoğlu, Fulya; Aygün, Gülnur; Köseoğlu, Hasan; Özdemir, Mehtap; Zeybek, S.; Özyüzer, Lütfi; Özdemir, Mehtap; Özyüzer, Gülnur Aygün; Özyüzer, LütfiIn this study, aluminum-doped zinc oxide (AZO) thin films were deposited by DC magnetron sputtering at room temperature. The distance between the substrate and target axis, and substrate rotation speed were varied to get high quality AZO thin films. The influences of these deposition parameters on the structural, optical, and electrical properties of the fabricated films were investigated by X-ray diffraction (XRD), Raman spectroscopy, spectrophotometry, and four-point probe techniques. The overall analysis revealed that both sample position and substrate rotation speed are effective in changing the optical, structural, and electrical properties of the AZO thin films. We further observed that stress in the films can be significantly reduced by off-center deposition and rotating the sample holder during the deposition. An average transmittance above 85% in the visible range and a resistivity of 2.02 × 10-3Ω cm were obtained for the AZO films.Article Citation - WoS: 35Citation - Scopus: 38Influence of Sulfurization Temperature on Cu2znsns4 Absorber Layer on Flexible Titanium Substrates for Thin Film Solar Cells(IOP Publishing Ltd., 2018) Buldu, Dilara Gökçen; Cantaş, Ayten; Türkoğlu, Fulya; Akça, Fatime Gülşah; Meriç, Ece; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Aygün, GülnurIn this study, the effect of sulfurization temperature on the morphology, composition and structure of Cu2ZnSnS4 (CZTS) thin films grown on titanium (Ti) substrates has been investigated. Since Ti foils are flexible, they were preferred as a substrate. As a result of their flexibility, they allow large area manufacturing and roll-to-roll processes. To understand the effects of sulfurization temperature on the CZTS formation on Ti foils, CZTS films fabricated with various sulfurization temperatures were investigated with several analyses including x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy and Raman scattering. XRD measurements showed a sharp and intense peak coming from the (112) planes of the kesterite type lattice structure (KS), which is strong evidence for good crystallinity. The surface morphologies of our thin films were investigated using SEM. Electron dispersive spectroscopy was also used for the compositional analysis of the thin films. According to these analysis, it is observed that Ti foils were suitable as substrates for the growth of CZTS thin films with desired properties and the sulfurization temperature plays a crucial role for producing good quality CZTS thin films on Ti foil substrates.Article Citation - WoS: 42Citation - Scopus: 46Importance of Cds Buffer Layer Thickness on Cu2znsns4-Based Solar Cell Efficiency(IOP Publishing Ltd., 2018) Cantaş, Ayten; Türkoğlu, Fulya; Meriç, Ece; Akça, Fatime Gülşah; Özdemir, Mehtap; Tarhan, Enver; Özyüzer, Lütfi; Özyüzer, Gülnur AygünCu2ZnSnS4 (CZTS) thin films were grown on Mo-coated soda lime glass (SLG) substrates by the sulfurization of DC magnetron-sputtered Zn, Sn and Cu metallic precursors under a sulfur atmosphere at 550 °C for 45 min. Understanding the composition and structure of the CZTS absorber layer is necessary to obtain efficient solar cells. With this aim, x-ray diffractometry, Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy and x-ray photoelectron spectroscopy were used to investigate the CZTS absorber layers. CZTS absorber films were obtained and found to be Cu-poor and Zn-rich in composition, which are both qualities desired for efficient solar cells. CdS was used as a buffer layer and was grown by the chemical bath deposition technique. The optical properties of CdS films on SLG were searched for using a spectroscopic ellipsometer and the results revealed that the bandgap increases with film thickness increment. CZTS-based solar cells with different CdS buffer layer thicknesses were prepared using a SLG/Mo/CZTS/CdS/ZnO/AZO solar cell configuration. The influence of the CdS buffer layer thickness on the performance of the CZTS solar cells was investigated. Device analysis showed that electrical characteristics of solar cells strongly depend on the buffer layer's thickness. Highly pronounced changes in V OC, fill factor and J SC parameters, which are the main efficiency limiting factors, with changing buffer layer thicknesses were observed. Our experiments confirmed that decreasing the CdS thickness improved the efficiency of CZTS solar cells down to the lowest thickness limit.Article Citation - WoS: 60Citation - Scopus: 64Improvement of Optical and Electrical Properties of Ito Thin Films by Electro-Annealing(Elsevier Ltd., 2015) Köseoğlu, Hasan; Türkoğlu, Fulya; Kurt, Metin; Yaman, Mutlu Devran; Akça, Fatime Gülşah; Aygün, Gülnur; Özyüzer, LütfiThe effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ITO thin films in vacuum and air were compared. Electro-annealing was performed by applying 0.75, 1.00, 1.25 and 1.50 A constant ac current to the ITO thin films. It was observed that the crystallinity of the films was better for the ITO thin films electro-annealed in vacuum. The changes in sheet resistance of electro-annealed ITO thin films with applied currents were detailed. The transmittance of the films increased for both electro-annealing in vacuum and air. A correlation between band-gap and resistivity for all of the electro-annealed thin films was observed.Article Citation - WoS: 20Citation - Scopus: 20Area Dependence and Influence of Crystal Inhomogeneity on Superconducting Properties of Bi2212 Mesa Structures(Elsevier Ltd., 2015) Demirhan, Yasemin; Sağlam, Hilal; Türkoğlu, Fulya; Alaboz, Hakan; Özyüzer, Lütfi; Miyakawa, Nobuaki; Kadowaki, K.The rapid increase in applications of terahertz waves requires new techniques to obtain continuous wave terahertz sources. Mesa structures fabricated from high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) single crystal have been observed as an intense, coherent, continuous electromagnetic wave source in the terahertz (THz) frequency region. However, in order to produce coherent radiation with high applicable power, we need large mesa structures that enter a collective electromagnetic state in which their oscillations are largely synchronized in phase. On the other hand, large mesa structures cause a heating problem. In this study, we report on the critical current density dependence of mesa area and the crystal inhomogeneity to understand heating problems in large area mesas for terahertz radiation. Since the doping dependence of Bi2212 is an important parameter, the as-grown Bi2212 crystals were heat-treated at various temperatures under vacuum conditions. We have fabricated triple mesa structures from Bi2212 single crystal using e-beam lithography and argon ion beam etching techniques with same area and with different area on the same chip. We investigated and compared characteristics of triple mesas which are on the same chip and next to each other. In this way, we searched the crystal inhomogeneity in triple mesa structures and studied the critical current density dependence of mesa area to obtain high emission power for the THz radiation. Our experimental results clearly show that the Josephson critical current density is decreasing when the area of mesa is increasing. © 2015 Elsevier Ltd. All rights reserved.