Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

Browse

Search Results

Now showing 1 - 10 of 226
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Modeling Cosmological Perturbations of Thermal Inflation
    (IOP Publishing, 2024) Bae, Jeong-Myeong; Hong, Sungwook E.; Zoe, Heeseung
    We consider a simple system consisting of matter, radiation and vacuum components to model the impact of thermal inflation on the evolution of primordial perturbations. The vacuum energy magnifies the primordial modes entering the horizon before its domination, making them potentially observable, and the resulting transfer function reflects the phase changes and energy contents. To determine the transfer function, we follow the curvature perturbation from well outside the horizon during radiation domination to well outside the horizon during vacuum domination and evaluate it on a constant radiation density hypersurface, as is appropriate for the case of thermal inflation. The shape of the transfer function is determined by the ratio of vacuum energy to radiation at matter-radiation equality, which we denote by upsilon , and has two characteristic scales, ka and kb , corresponding to the horizon sizes at matter radiation equality and the beginning of the inflation, respectively. If upsilon MUCH LESS-THAN1 , the Universe experiences radiation, matter and vacuum domination eras and the transfer function is flat for kMUCH LESS-THANkb , oscillates with amplitude 1/5 for kbMUCH LESS-THANkMUCH LESS-THANka and oscillates with amplitude 1 for k >> ka . For upsilon >> 1 , the matter domination era disappears, and the transfer function reduces to being flat for kMUCH LESS-THANkb and oscillating with amplitude 1 for k >> kb .
  • Article
    Anisotropic Tunability of Vibrational Modes in Black Phosphorus Under Uniaxial Compressive/Tensile Strain
    (Wiley, 2023) Li, Hao; Kutlu, Tayfun; Carrascoso, Felix; Şahin, Hasan; Munuera, Carmen; Castellanos Gomez, Andres
    Strain engineering is a powerful strategy for tuning the optical, electrical, vibrational properties of 2D nanomaterials. In this work, a four-point bending apparatus is constructed to apply both compressive and tensile strain on 2D anisotropic black phosphorus flake. Further polarized Raman spectroscopy is used to study the vibrational modes of black phosphorus flakes under uniaxial strain applied along various crystalline orientations. Here, a strong anisotropic blue/redshift of A1g, B2g, and A2g modes is found under compressive/tensile strain, respectively. Interestingly, mode A1g exhibits the maximum/minimum shift while mode B2g and mode A2g present the minimum/maximum shift when the strain is applied along armchair/zigzag direction. Density functional theory calculations are carried out to investigate the anisotropic strain response mechanism, finding that the strain-induced regulation of the PP bond angle, bond length, and especially interlayer interaction has a giant influence on the Raman shift. A four-point bending apparatus is constructed to study the effect of uniaxial strain on the vibrational property of anisotropic black phosphorus. Particularly, strong anisotropy on the Raman blueshift/redshift rate upon compressive/tensile strain can be observed, which results from the strain-induced regulation of the bond angle, bond length, and interlayer interactions according to density functional theory calculation analysis.image
  • Article
    Citation - WoS: 9
    Citation - Scopus: 9
    High Voltage Response of Graphene/4h-sic Uv Photodetector With Low Level Detection
    (Elsevier, 2023) Jehad, Ala K.; Ünverdi, Özhan; Çelebi, Cem
    A self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a p-i-n like-structure with high voltage response has been fabricated to detect and measure low intensity ultraviolet (UV) radiation. Bilayer graphene sheet grown by chemical vapor deposition (CVD) method was transferred on the top of an epilayer structure of n-/n+ 4 H-SiC. In this structure, two Schottky contacts were formed: one at G/ n- 4H-SiC interface and the other at bulk-4 H-SiC/Cr/Au interface. The photodetector's characteristic measurements revealed low dark current of - 0.58 nA and spectral voltage responsivity of - 0.75 V/W at 300 nm wavelength. Under low level UV illumination of 300 nm wavelength, the photodetector exhibited a leakage current and a photogenerated response voltage of 1.1 nA and 10 mV, respectively. The time-dependent photovoltage measurements displayed a rapid photovoltage response with rise and decay times of -74 ns and - 580 ns, respectively. This novel device holds promise for applications requiring sensitive and self-powered UV detection.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Amperometric Detection of Nh3 by Aromatic Sam-Modified Graphene
    (IEEE, 2023) Yağmurcukardeş, Nesli; Bayram, Abdullah; Aydın, Hasan; Can, Mustafa; Demiç, Şerafettin; Açıkbaş, Yaşar; Çelebi, Cem
    Ammonia (NH3) is a toxic substance resulting in various acute and chronic effects on individuals. NH3 detection, monitoring methods, and detection tools are desperately needed. In this work, we improved the NH3 sensing capabilities of grapheme (GP) films deposited by chemical vapor deposition (CVD) by modifying aromatic self-assembled monolayer (SAM) molecules such as 5-[(3-methylphenyl) (phenyl) amino] isophthalic acid (MeIPA) and 5-(diphenyl)amino] isophthalic acid (PhIPA) on amperometric detection method. Morphological investigations of the films were carried out by optical and scanning electron microscopy (SEM). Surface potential was characterized with Kelvin probe force microscopy (KPFM), and vibrational properties were characterized with Raman spectroscopy. MeIPA modification increased NH3 uptake by two times compared to unmodified GP. The results indicated that the SAM modification enhanced NH3 molecule adsorption and improved its periodic reversible and reproducible response using the amperometric detection system, indicating that SAM molecules might be a feasible probe for NH3. © 2001-2012 IEEE.
  • Article
    Citation - WoS: 35
    Citation - Scopus: 35
    Cvd Graphene/Sic Uv Photodetector With Enhanced Spectral Responsivity and Response Speed
    (Elsevier, 2023) Jehad, Ala K.; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, Cem
    A self-powered, high-performance graphene/Silicon Carbide (G/4H-SiC) ultraviolet Schottky junction photodetector has been fabricated, and the effect of using monolayer and bilayer graphene on the device performance parameters was investigated. P-type graphene sheets were grown by the chemical vapor deposition (CVD) method, while 4H-SiC material consists of an epilayer structure of n-/n+ on bulk n-SiC. Two photodetector devices have been studied, one with monolayer graphene (MLG) and the other with bilayer graphene (BLG). The proposed photodetector structure reveals the highest spectral responsivity known of a G/4H-SiC UV photodetector so far. Electronic and optoelectronic characterizations were done under an ultraviolet wavelength range from 240 to 350 nm. The results show two spectral responsivity maxima (Rmax) at 285 nm and 300 nm wavelengths. Exhibiting two maxima in spectral responsivity and detectivity is caused by the constructive and destructive interference effects of multiple reflections at the SiC epilayer's interfaces. The photodetector devices exhibit high spectral responsivity (R ? 0.09 AW?1), maximum detectivity (D* ? 2.9 × 1012 Jones), and minimum noise equivalent power (NEP ? 0.17 pWHz-1/2) in both devices. Using bilayer graphene instead of monolayer showed no significant change in both the photogenerated current and the spectral responsivity due to the higher absorption coefficient of bilayer graphene, however, it exhibited a significant improvement in the response speed. The response speed was found to increase by 50 % when bilayer graphene was used as a hole collecting electrode in the G/4H-SiC junction. This is because bilayer graphene creates a narrower depletion layer and higher electric field, which promotes efficient charge separation and recombination. © 2023 Elsevier B.V.
  • Article
    Citation - WoS: 22
    Citation - Scopus: 26
    Flexible Metal/Semiconductor Type Photodetectors Based on Manganese Doped Zno Nanorods
    (Elsevier, 2023) Karagöz, Emine; Altaf, Çiğdem Tuç; Yaman, Ecenaz; Yıldırım, İpek Deniz; Erdem, Emre; Çelebi, Cem; Fidan, Mehmet; Sankir, Mehmet; Demirci Sankir, Nurdan
    High-performance flexible photodetectors are one of the most interesting research areas due to their great possibilities for a variety of applications such as portable and wearable optoelectronics. This study verifies the performance of flexible metal/semiconductor/metal-type photodetector based on pristine and manganese doped ZnO nanorods (ZnO-NRs) prepared in two different concentrations of zinc precursors and manganese dopant at low temperatures. The photodetectors having ZnO-NRs with high aspect ratios were investigated by various material characterization techniques such as electron paramagnetic resonance and photoluminescence spectroscopy to confirm the relationship between defect concentrations and photodetector performance parameters. It has been calculated that the detectivity (D*) and responsivity (R) of the ZnO nanorod-based photodetectors increased 20 and 18 folds, respectively by increasing the concentration of zinc precursor. Besides the D* and R values of the photodetectors, prepared by the 16.5 mM zinc precursor, increased 18 and 4.5-fold, respectively, after manganese doping. We confirmed that even a very low concentration of zinc precursor could produce a photodetector with high performance in photo-response characteristics, flexibility, and stability against 10,000 cycles of convex/concave bending.(c) 2023 Elsevier B.V. All rights reserved.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Cosmological States in Loop Quantum Gravity on Homogeneous Graphs
    (American Physical Society, 2023) Baytaş, Bekir; Yokomizo, N.
    We introduce a class of states characterized by proposed conditions of homogeneity and isotropy in loop quantum gravity and construct concrete examples given by Bell-network states on a special class of homogeneous graphs. Such states provide new representations of cosmological spaces that can be explored for the formulation of cosmological models in the context of loop quantum gravity. We show that their local geometry is described in an automorphism-invariant manner by one-node observables analogous to the one-body observables used in many-body quantum mechanics, and compute the density matrix representing the restriction of global states to the algebra of one-node observables. The von Neumann entropy of this density matrix provides a notion of entanglement entropy of a local region that is invariant under automorphisms and can be applied to states involving superpositions of distinct graphs. © 2023 American Physical Society.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 5
    Self-Powered Photodetector Array Based on Individual Graphene Electrode and Silicon-On Integration
    (Elsevier, 2023) Yanılmaz, Alper; Ünverdi, Özhan; Çelebi, Cem
    One of the key limitations for the device performance of the silicon (Si) based photodetector arrays is the optical crosstalk effect encountered between photoactive elements as well. The scope of this work is to reduce optical crosstalk and thus increasing the device performances with graphene and Si integration. This paper presents the design, fabrication process, and performance evaluation of self-powered individual Graphene/Silicon on Insulator (GSOI) based Schottky barrier photodiode array (PDA) devices. A 4-element GSOI Schottky barrier PDA with separate graphene electrodes is fabricated to examine possible optical crosstalk encountered between each diode in the array structure. Here, monolayer graphene is utilized as hole collecting separate electrode on individually arrayed n-type Si on SOI substrate by photolithography technique. Each diode in the array exhibited a clear rectifying Schottky character. Photoresponse characterizations revealed that all diodes had excellent device performance even in self-powered mode in terms of an Ilight/Idark ratio up to 104, a responsivity of ∼0.12 A/W, a specific detectivity of around 1.6 × 1012 Jones, and a response speed of ∼1.32 μs at 660 nm wavelength. As revealed by optical crosstalk measurement, the device with pixel pitch of 1.5 mm had a total crosstalk of about 0.10% (−60 dB) per array. These results showed that the optical crosstalk between neighboring n-Si elements can be greatly minimized when graphene is used as separated electrode on arrayed Si on SOI substrate. Our study is expected give an insight into the performance characteristics of GSOI PDA devices which have great potential to be used in many technological applications such as multi-wavelength light measurement, level metering, high-speed photometry and position/motion detection. © 2023 Elsevier B.V.
  • Article
    Citation - WoS: 39
    Citation - Scopus: 48
    Analysis of the Cp Structure of the Yukawa Coupling Between the Higgs Boson and Tau Leptons in Proton-Proton Collisions at Root S=13 Tev
    (Springer, 2022) Tumasyan, A.; Adam, W.; Andrejkovic, J. W.; Bergauer, T.; Chatterjee, S.; Dragicevic, M.; Del Valle, A. Escalante
    The first measurement of the CP structure of the Yukawa coupling between the Higgs boson and tau leptons is presented. The measurement is based on data collected in proton-proton collisions at root s = 13 TeV by the CMS detector at the LHC, corresponding to an integrated luminosity of 137 fb(-1). The analysis uses the angular correlation between the decay planes of tau leptons produced in Higgs boson decays. The effective mixing angle between CP-even and CP-odd tau Yukawa couplings is found to be -1 +/- 19 degrees, compared to an expected value of 0 +/- 21 degrees at the 68.3% confidence level. The data disfavour the pure CP-odd scenario at 3.0 standard deviations. The results are compatible with predictions for the standard model Higgs boson.
  • Article
    Citation - WoS: 40
    Citation - Scopus: 42
    Free-Space Quantum Key Distribution With Single Photons From Defects in Hexagonal Boron Nitride
    (Wiley, 2022) Samaner, Çağlar; Paçal, Serkan; Mutlu, Görkem; Uyanık, Kıvanç; Ateş, Serkan
    Efficient single photon generation is an important requirement for several practical applications in quantum technologies, including quantum cryptography. A proof-of-concept demonstration of free-space quantum key distribution (QKD) is presented with single photons generated from an isolated defect in hexagonal boron nitride (hBN). The bright source operating at room temperature is integrated into a QKD system based on B92 protocol and a sifted key rate of 238 bps with a quantum bit error rate of 8.95% are achieved at 1 MHz clock rate. The effect of temporal filtering of detected photons on the performance of QKD parameters is also studied. It is believed that these results will stimulate the research on optically active defects in hBN as well as other 2D-based quantum emitters and their applications within quantum information technologies including practical QKD systems.