Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 22Citation - Scopus: 24Preparation of the Ferrocene-Substituted 1,3-Distal P-Tert Based Qcm Sensors Array and Utilization of Its Gas-Sensing Affinities(Elsevier Ltd., 2014) Sayın, Serkan; Özbek, Cebrail; Okur, Salih; Yılmaz, MustafaThe article describes the synthesis of the new ferrocene-substituted calix[4]arene derivative 4 as sensitive layer, and suggests that the immobilization of it is on a quartz crystal microbalance gold electrode via the drop-casting method in order to produce the calix[4]arene-based QCM sensor. In addition, sensor response of the calix[4]arene-based QCM sensor was investigated towards carbon dioxide (CO2) and carbon monoxide (CO). The sensing and selectivity studies show that the ferrocene-substituted calix[4]arene-based QCM sensor is an effective gas sensor toward both carbon dioxide and carbon monoxide.Article Citation - WoS: 70Citation - Scopus: 76Humidity-Sensing Properties of a Zno Nanowire Film as Measured With a Qcm(Elsevier Ltd., 2011) Erol, Ayşe; Okur, Salih; Yağmurcukardeş, Nesli; Arıkan, M. ÇetinThe humidity-sensing properties of ZnO nanowires synthesized by carbothermal catalyst-free vapor solid (VS) technique were studied. The morphology and the crystal structure were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The humidity adsorption and desorption kinetics of the synthesized ZnO nanowires were investigated via quartz crystal microbalance (QCM) measurements. The observed positive frequency shift of ZnO nanowires when loaded on the QCM crystal under varying relative humidity conditions can be explained in terms of visco-elastic variations in their mechanical stiffness.Article Citation - WoS: 42Citation - Scopus: 42Investigation of Humidity Sensing Properties of Zns Nanowires Synthesized by Vapor Liquid Solid (vls) Technique(Elsevier Ltd., 2011) Üzar, Neslihan; Okur, Salih; Arıkan, M. ÇetinZinc sulfide (ZnS) nanostructures were synthesized by vapor-liquid-solid (VLS) method which is based on thermal evaporation. The morphology, chemical composition and crystal structure of ZnS nanostructures were characterized by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analyses. The results of these studies revealed that wurtzite ZnS nanowires with diameters in range of 50-400 nm are obtained. In order to investigate the humidity sensing capability, quartz crystal microbalance (QCM) and electrical resistance measurement techniques were carried out at different relative humidity (RH) conditions between 33% and 100% RH at room temperature. QCM results show that the oscillating frequency of ZnS nanowires loaded on QCM crystal decreases in range of 33-84% RH, but increases at 90% and 100% RH. The sensitivity of ZnS nanowires-based sensor (R air/RRH) increases over 1000 times from 33% to 100% RH. These experimental results show that ZnS nanowires have a great potential for humidity sensing applications at room temperature.Article Citation - WoS: 11Citation - Scopus: 13Magnetic Layer Formation on Plasma Nitrided Cocrmo Alloy(Elsevier Ltd., 2011) Öztürk, Orhan; Okur, Salih; Pichon, L.; Liedke, M. O.; Riviere, Jean PaulIn this study structural and magnetic character of the expanded austenite phase (γN) layer formed on a medical grade CoCrMo alloy by a low-pressure Radio-Frequency plasma nitriding process was investigated. The formation of the expanded austenite phase is facilitated at a substrate temperature near 400°C for 1, 2, 4, 6 and 20h under a gas mixture of 60% N2-40% H2. The magnetic state of the γN layers was determined by a surface sensitive technique, magneto-optic Kerr effect (MOKE), and with a scanning probe microscope in magnetic force mode (MFM). Strong evidence for the ferromagnetic nature of the γN-(Co,Cr,Mo) phase is provided by the observation of stripe domain structures and the hysteresis loops. The ferromagnetic state for the γN phase observed here is mainly linked to large lattice expansions (~10%) due to high N contents (~30at.%). As an interstitial impurity, nitrogen dilates the host lattice i.e. the Co-Co (or Fe-Fe) distance is increased, which strongly influences the magnetic interactions. An analogy between the magnetic properties of the expanded phases, γN-(Fe,Cr,Ni) and γN-(Co,Cr,Mo), formed in austenitic stainless steel alloys and the CoCrMo alloy of this study is made, and it is suggested that the ferromagnetic states for the γN-(Co,Cr,Mo) and γN-(Fe,Cr,Ni) phases may be correlated with the volume dependence of the magnetic properties of fcc-Co/Co4N and fcc-Fe/Fe4N, respectively.Article Citation - WoS: 5Citation - Scopus: 6New Approach for Consideration of Adsorption/Desorption Data(Elsevier Ltd., 2011) Baleanu, Mihaela Cristina; Nigmatullin, Raoul R.; Okur, Salih; Ocakoğlu, KasımIn this paper we proposed a new approach to modify the Langmuir model by considering nonlinear effects such as diffusion of water molecules in/out of an adsorbing film for humidity adsorption and desorption kinetics. The model was tested on the humidity adsorption and desorption data of a spin coated 50. nm thick Ruthenium polypridyl complex (Ru-PC K314) film, measured under relative humidity between 11% and 97% using by Quartz Crystal Microbalance (QCM) technique. © 2011 Elsevier B.V.Article Citation - WoS: 35Citation - Scopus: 37Modification of Ito Surface Using Aromatic Small Molecules With Carboxylic Acid Groups for Oled Applications(Elsevier Ltd., 2011) Havare, Ali Kemal; Can, Mustafa; Demiç, Şerafettin; Okur, Salih; Kuş, Mahmut; Aydın, Hasan; Yağmurcukardeş, Nesli; Tarı, Süleyman4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) was synthesized in order to facilitate the hole-injection in Organic Light Emitting Diodes (OLED). MPPBA was applied to form self-assembled monolayer (SAM) on indium tin oxide (ITO) anode to align energy-level at the interface between organic semiconductor material (TPD) and inorganic anode (ITO) in OLED devices. The modified surface was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM). KPFM was used to measure the surface potential and work function between the tip and the ITO surface modified by SAM technique using MPPBA. The OLED devices (ITO/MPPBA/TPD/Alq3/Al) fabricated with SAM-modified ITO substrates showed lower turn-on voltages and enhanced diode current compare to the OLED devices fabricated with bare ITO substrates.Article Citation - WoS: 39Citation - Scopus: 43Synthesis and Humidity Sensing Analysis of Zns Nanowires(Elsevier Ltd., 2012) Okur, Salih; Üzar, Neslihan; Tekgüzel, Nesli; Erol, Ayşe; Arıkan, M. ÇetinZnS nanowires synthesized by the vapor-liquid-solid (VLS) method and humidity sensing properties of obtained ZnS nanowires were investigated by quartz crystal microbalance (QCM) method and electrical measurements. The synthesized nanowires were exposed to relative humidity (RH) between 22% and 97% under controlled environment. Our experimental results show that ZnS nanowires have a great potential for humidity sensing applications in room temperature operations. © 2010 Elsevier B.V. All rights reserved.Article Citation - WoS: 12Citation - Scopus: 16Humidity Adsorption Kinetics of a Trypsin Gel Film(Elsevier Ltd., 2012) Okur, Salih; Ceylan, Çağatay; Çulcular, EvrenThis study focuses on the humidity adsorption kinetics of an isopropanol-induced and pH-triggered bovine pancreatic trypsin gel (BPTG). The BPTG was adsorbed on a gold coated Quartz Crystal Microbalance (QCM) substrate with a thickness of 376nm. The morphology of the film was characterized using Atomic Force Microscopy (AFM). QCM was used to investigate the humidity sensing properties of the BPTG film. The response of the humidity sensor was explained using the Langmuir model. The average values of adsorption and desorption rates between 11% RH (relative humidity) and 97% RH were calculated as 2482.5M -1s -1 and 0.02s -1, respectively. The equilibrium constant and average Gibbs Free Energy of humidity adsorption and desorption cycles were obtained as 133,000 and -11.8kJ/mol, respectively. © 2011 Elsevier Inc..Article Citation - WoS: 17Citation - Scopus: 18Analysis of Interface States of the Pentacene Organic Thin-Film Phototransistor by Conductance Technique(Elsevier Ltd., 2009) Okur, Salih; Yakuphanoğlu, FahrettinA pentacene thin-film transistor with a channel width of 300 μm and a channel length of 30 μm has been successfully fabricated on n-Si substrate with thermally oxidized SiO2 as a gate insulator. The photovoltaic and interface state density properties of the transistor have been investigated. A pentacene film of 200 nm thickness was deposited on the SiO2 layer with a vacuum thermal evaporator. Atomic force microscopy images of the pentacene film on SiO2 insulating layer show a homogeneous film surface with the rms roughness of 11 nm. The transistor shows p-channel characteristics, as a result of positive carriers generated in the pentacene film for the negative bias voltages applied to the gate. The photosensitivity (Iph/Idark) is measured as 1.45 at an illumination intensity of 3500 lux at the off state. This suggests that the pentacene thin-film transistor shows a phototransistor characteristic. The field-effect mobility of the pentacene OTFT was found to be 0.021 cm2/(V s). The interface state density of the transistor was determined using conductance technique and was found to be about 1.191 × 1010 eV-1 cm-2.Article Citation - WoS: 45Citation - Scopus: 43Analysis of Electronic Parameters and Interface States of Boron Dispersed Triethanolamine/P-si Structure by Afm, I-V, C-V and G/?-v-f Techniques(Elsevier Ltd., 2010) Yakuphanoğlu, Fahrettin; Okur, SalihThe electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/ω-V-f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by atomic force microscopy. The atomic force microscopy results show a homogenous distribution of boron particles in triethanolamine film. The electronic parameters (barrier height, ideality factor and average series resistance) obtained from I-V characteristics of the diode are 0.81 eV, 2.07 and 5.04 kΩ, respectively. The interface state density of the diode was found to be 2.54 × 1010 eV- cm-2 under Vg = 0. The obtained Dit values obtained from C-V and G/ω measurements are in agreement with each other. The profile of series resistance dependent on voltage and frequency confirms the presence of interface states in boron dispersed triethanolamine/p-Si structure. It is evaluated that the boron dispersed triethanolamine controls the electronic parameters and interface properties of conventional Al/p-Si diode. © 2009 Elsevier B.V. All rights reserved.
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