Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7148

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  • Article
    Citation - WoS: 5
    Citation - Scopus: 4
    The Effect of Annealing Temperature on the Optical Properties of a Ruthenium Complex Thin Film
    (Elsevier Ltd., 2016) Ocakoğlu, Kasım; Okur, Salih; Aydın, Hasan; Emen, Fatih Mehmet
    The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10- 5 eV/K. Furthermore, the thermal analysis studies were carried out in the range 298-673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298-673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO2, CO molecules and SO3H group was eliminated between 614 K and 666 K.
  • Article
    Citation - WoS: 60
    Citation - Scopus: 64
    Improvement of Optical and Electrical Properties of Ito Thin Films by Electro-Annealing
    (Elsevier Ltd., 2015) Köseoğlu, Hasan; Türkoğlu, Fulya; Kurt, Metin; Yaman, Mutlu Devran; Akça, Fatime Gülşah; Aygün, Gülnur; Özyüzer, Lütfi
    The effect of electro-annealing in vacuum and air on the optical and electrical properties of ITO thin films grown by large area DC magnetron sputtering was investigated. Moreover, the performances of the electro-annealed ITO thin films in vacuum and air were compared. Electro-annealing was performed by applying 0.75, 1.00, 1.25 and 1.50 A constant ac current to the ITO thin films. It was observed that the crystallinity of the films was better for the ITO thin films electro-annealed in vacuum. The changes in sheet resistance of electro-annealed ITO thin films with applied currents were detailed. The transmittance of the films increased for both electro-annealing in vacuum and air. A correlation between band-gap and resistivity for all of the electro-annealed thin films was observed.
  • Article
    Citation - WoS: 18
    Citation - Scopus: 18
    The Effects of the Post-Annealing Time on the Growth Mechanism of Bi2sr2ca1cu2o8+ Thin Films Produced on Mgo (100) Single Crystal Substrates by Pulsed Laser Deposition (pld)
    (Elsevier Ltd., 2016) Nane, Onur; Özçelik, Bekir; Abukay, Doğan
    Bi2Sr2Ca1Cu2O8+δï thin films were deposited on MgO (100) substrates by pulsed laser deposition (PLD). The effects of post-annealing time on the phase formation, the structural and superconducting properties of the films have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), temperature dependent resistivity (R-T), atomic force microscopy (AFM), and DC magnetization measurements. The films deposited at 600 °C were post-annealed in an atmosphere of a gas mixture of Ar (93%) and O2 (7%), at 860 °C for 10, 30, and 60 min. All films have demonstrated a mainly single phase of 2212 with a high crystallinity (FWHM0.159°) and c-axis oriented. The critical temperature, TC, of the films annealed for 10, 30, and 60 min were obtained as 77, 78, and 78 K, respectively. The highest critical current density, JC, was calculated as 3.34×107 A/cm2 for the film annealed at 860 °C for 30 min at 10 K.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Tunneling Spectroscopy of Heavily Underdoped Crystals of Bi2sr2cacu2o8-?
    (Elsevier Ltd., 2000) Özyüzer, Lütfi; Zasadzinski, John F.; Miyakawa, Nobuaki; Kendziora, Christopher A.; Sha, J.; Hinks, David G.; Gray, Kenneth E.
    Crystals of Bi2Sr2CaCu2O8+δ with optimal Tc=95 K have been underdoped using two different methods and the superconducting gaps have been obtained by tunneling. In some cases, three different tunneling geometries have been utilized: point contact, STM and break junctions. The first doping method involves control of the oxygen content by annealing in various partial pressures of oxygen. These crystals exhibit a narrow spread of gap values over a wide doping range from overdoped (Tc=56 K) to underdoped with Tc=70 K. However, for underdoped crystals with Tc midpoints in the range 25 K - 63 K, there is a dramatic increase in the spread of gap values which may signal the development of static phase separation of either chemical or electronic origin. To avoid possible chemical phase separation, we have explored another doping procedure which incorporates Dy substitution on the Ca site. These crystals exhibit a relatively narrow superconducting transition width and some preliminary tunneling spectra will be presented.