Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7148
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Article Citation - WoS: 3Citation - Scopus: 3Growth and Characterization of Cdte Absorbers on Gaas by Mbe for High Concentration Pv Solar Cells(John Wiley and Sons Inc., 2015) Arı, Ozan; Polat, Mustafa; Karakaya, Merve; Selamet, YusufCdTe based II-VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X-ray diffraction rocking curves (XRD RC) as low as 227 arc-seconds with 0.5% thickness uniformity that a 2 μm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm-1 in solar radiation spectrum.Conference Object Citation - WoS: 76Citation - Scopus: 80Stability of Microcrystalline Silicon for Thin Film Solar Cell Applications(Institute of Electrical Engineers, 2003) Finger, Friedhelm; Carius, Reinhard; Dylla, Thorsten; Klein, Stefan; Okur, Salih; Güneş, MehmetThe development of microcrystalline silicon (μc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline μc-Si:H. However, the highest efficiencies are obtained with material which may still include a-Si:H regions and light-induced changes may be expected in such material. On the other hand, material of high crystallinity is susceptible to in-diffusion of atmospheric gases which, through adsorption or oxidation, affect the electronic transport. Investigations are presented of such effects concerning the stability of μc-Si:H films and solar cells prepared by plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition.