Master Degree / Yüksek Lisans Tezleri

Permanent URI for this collectionhttps://hdl.handle.net/11147/3008

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Author: search.filters.author.Özyüzer, LütfiSubject: search.filters.subject.Solar energy

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  • Master Thesis
    Efficiency Studies of Cu2znsns2 Thin Film Solar Cell
    (Izmir Institute of Technology, 2018) Meriç, Ece; Aral, Gürcan; Özyüzer, Lütfi; Özyüzer, Lütfi; Aral, Gürcan; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Cu2ZnSnS4 (CZTS) is a promising candidate as an absorber layer for thin film solar cells due to not only its low cost but also nontoxic properties contrary to alternative materials such as CdTe and Cu(In,Ge)Se2 (CIGS). Recently, CZTS and similar chalcogenides have attracted remarkable attention because of their suitable properties. In my thesis; I studied the efficiency of Cu2ZnSnS4 thin film solar cells for various stoichiometric cases. Besides, the effect of back contact, buffer layer thickness and sulfurization time were investigated. CZTS thin films were fabricated by DC magnetron sputtering method on Molybdenum (Mo) coated Soda Lime Glass (SLG) and Ti foil substrates. Cu, Sn, Zn, Cu layers were, respectively, deposited on the substrates, and then sulfurization process was followed as the second step in the growth process to obtain a desirable CZTS formation. The as grown CZTS structure was investigated using Raman and X-Ray Diffraction (XRD) spectroscopies. Scanning electron microscopy (SEM) was used to investigate the surface morphology of the films. Energy dispersive spectroscopy (EDS) was used to define the chemical structure of the surface of the films. Next, a CdS buffer layer was deposited on CZTS absorber layer using CBD method at 85oC for varying times (60, 75 and 90 min). Then, ZnO and Al doped ZnO (AZO) layers were deposited on CdS. J-V curves were obtained for SLG/Mo/CZTS/CdS/ZnO/AZO solar cell structure. The photovoltaic characteristic of solar cells was studied and their dependence on CdS deposition time were found. Among all the device we produced, the highest efficiency was obtained for the device with the lowest CdS deposition time. In addition; effect of sulfurization time on the solar cell conversion efficiency was studied.
  • Master Thesis
    Temperature Dependence of Resistivity and Hall Coefficient in Cu2znsns4 Absorbers for Thin Film Solar Cells
    (Izmir Institute of Technology, 2017) Akça, Fatime Gülşah; Aygün, Gülnur; Özyüzer, Lütfi; Aygün Özyüzer, Gülnur; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    energy is the most powerful clean energy source to act on the current energy needing all over the world. The utilization of green energy systems should be promoted since these energy systems benefit consumers, industry and the environment effectively for the developing countries. This advancement can be solely achieved if renewable energy sources become more accessible. It means that not only cheaper but also handy clean energy systems are needed. In spite of relatively high efficiency obtained by using c-Si, Si solar modules require high budget for manufacturing. The high production cost of c-Si, PV industry is lead to search for cheaper candidate materials like Cu2ZnSnS4 (CZTS) as absorber layer in solar cells. The aim of the thesis is to investigate electrical properties of CZTS p-type intrinsic semiconductor compound on soda lime glass substrates, including the temperature dependent electrical conductivity, carrier concentrations and mobility extracted from Hall Effect measurements. Firstly, the metal precursor films were fabricated in multi-target sputtering system, then they were sulfurized inside the tubular furnace in order to obtain the CZTS compound. X-ray diffraction and Raman spectroscopy measurements revealed the formation of kesterite structure. A good crystallinity and grain compactness of the films were determined by scanning electron microscopy (SEM). Electrical properties were measured by van der Pauw techniques. Hall effect measurements showed the p-type semiconductor behavior for all samples at room temperature. Also, optical properties including absorption coefficient, spectral transmission, and optical band gap were determined to characterize CZTS thin films.