Master Degree / Yüksek Lisans Tezleri
Permanent URI for this collectionhttps://hdl.handle.net/11147/3008
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Master Thesis Investigation of the Photo-Response of Graphene Silicon Photodetector in the Ultraviolet Region(01. Izmir Institute of Technology, 2024) Çelebi, Cem; Çelebi, Cem; Ünverdi, Özhan; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this thesis, we focus on the optoelectronic properties of p-type graphene and n-type Silicon (Gr/Si) Schottky barrier photodiode according to the number of layers in the ultraviolet region (UV). The I-V measurements were conducted at an applied bias voltage between -0.5 and 0.5 V for each Gr/Si heterojunction. The I-V measurements taken under dark conditions showed that all Gr/Si samples with 2-, 4- and 6-layers graphene electrodes exhibited rectifying Schottky junction character, but all device's reverse saturation currents (I0) were different. Schottky barrier heights (ΦB) of the samples with 2-, 4- and 6-layers graphene electrodes were determined using the I0 values obtained from I-V measurements. Compared to the ΦB value of the sample with 2 layers graphene electrode, the ΦB of the sample with 4 layers of graphene electrode increased to ~0.82 eV, and then ΦB was found to decrease to ~0.79 eV for the 6-layer graphene electrode. Additionally, photo-response measurements were carried out at zero bias voltage and in the wavelength range of 250 – 400 nm to determine the spectral response (R) of the devices in the UV region. Compared to the device with 2 layers graphene electrode, R of the sample with 4 layers graphene electrode increased by 3 times. The result obtained revealed that using 4-layer graphene as a light-transparent electrode, Gr/Si Schottky barrier photodiode is the most applicable option for sensitive detection of light in the UV region.Master Thesis Electron Optics in Graphene(01. Izmir Institute of Technology, 2022) Çakır, Özgür; Çakır, Özgür; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyNegative refraction, also known as Veselago lensing, was first predicted by Victor Veselago in 1968 (Veselago (1968)). Its unique effect has a great potential for both scientific and technological applications such as superlenses. Unlike the conventional positive refractive index, focusing effect can be observed by negative refraction. In this thesis, the focusing effect was investigated theoretically through on n-p junction in graphene. The opposite chirality of electrons and holes enable the negative refraction where electrons( holes) have their momentum parallel(anti-parallel) to the group velocity. The case when potential barrier is directed perpendicular to KK direction, where K and K are the Dirac points were considered. The Green’s functions were calculated analytically and derived the susceptibility using the Green’s functions for various positions of the sources and the receiver at various Fermi energies. The spatial Green’s functions were calculated analytically and derived the static susceptibility (response function).Master Thesis The Impact of Adsorbates on the Optoelectronic Properties of Graphene/Silicon Based Schottky Barrier Photodiodes(01. Izmir Institute of Technology, 2020) Çelebi, Cem; Çelebi, Cem; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyThe aim of this study is to investigate the effect of atmospheric adsorbates on the electronic and optoelectronic properties of graphene/n-type Silicon (Gr/n-Si) based Schottky barrier photodiodes. Wavelength resolved photocurrent spectroscopy and transient photocurrent spectroscopy measurements conducted under high-vacuum conditions revealed that the adsorbates cause hole doping in graphene and hence increase the zero-bias Schottky barrier height of the Gr/n-Si heterojunction from 0.71 to 0.78 eV. Adsorbate induced increment in the barrier height promotes the separation of photo-excited charge carriers at the depletion region of the heterojunction and leads to an improvement in the maximum spectral response (e.g., from 0.39 to 0.46 A W^-1) and response speed of the Gr/n-Si photodiode in the near-infrared region. The experimentally obtained results are expected to give an insight into the adsorbate induced variations in the rectification and photo-response characters of the heterojunctions of graphene and other 2D materials with different semiconductors.Master Thesis Rkky Interaction and Its Control in Graphene and Related Materials(Izmir Institute of Technology, 2019) Canbolat, Ahmet Utku; Çakır, Özgür; Çakır, Özgür; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyGraphene got dramatic attention and lead the two-dimensional material physics after its first successful synthesis in 2004. Its unique electronic properties contain great potential for both scientific and technological applications. RKKY (Ruderman-Kittel-Kasuya Yosida) is an indirect exchange interaction mediated by conduction electrons. In graphene, the interaction strength decay as 1/R³ where R is the distance between the magnetic moments. In the first part of this work, we calculated that applying circular potential on a graphene sheet forms quasi-bound states in the potential region. Via these states, the RKKY interaction is enhanced between magnetic moments on the edge of the potential well. This can be thought of an electronic analog of the Purcell effect. We showed that the interaction strength is even more enhanced if the Fermi level is in resonance with the energies of the quasi-bound states. In the second part, we considered zigzag edged hexagonal nanoflakes. It is known that zigzag edged flakes have zero-energy edge-states. It is also known that the states with closer energies contribute more to RKKY interaction. Thus, we calculated that there is an enhancement between these edge-states. In the third part, we investigated the behavior of RKKY interaction for two dimensional materials with quartic dispersion. An energy dispersion is said to be quartic if it is of the form E = α(k² - kc² )². Here, α and kc are material dependent constants. There are many materials exhibiting the quartic dispersion such as nitrogene, phosphorene, and arsenene. These materials are also sharing two-dimensional hexagonal lattice structure with graphene. What makes quartic dispersion special is that it has van-Hove singularity in its density of states near the band-edge. RKKY interaction is sensitive to the density of states because it depends on the number of electrons contributing spin exchange. Thus, the larger the number of electrons, the stronger the coupling. In this part, we tuned the Fermi level so that it lies on the DOS singularity and then we calculated the interaction strength as a function of R. We found a slowly decaying RKKY interaction for quartic dispersion. If the energy dispersion is pure quartic (i.e. E = ak4), we found the interaction strength depends on 1/(kf R) instead of 1/R which makes the RKKY interaction long range for arbitrarily small Fermi level.Master Thesis Spin-Spin Interactions of Magnetic Impurities in Graphene Nanoribbons(Izmir Institute of Technology, 2019) Kolay, Anıl; Güçlü, Alev Devrim; Güçlü, Alev Devrim; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this thesis, we investigate the interaction between two impurity adatoms with high magnetic moment which are located on zigzag graphene nanoribbons that consist of 10516 atoms. The magnetic adatoms communicate with other trough the host electrons such as Ruderman-Kittel-Kasuya-Yoshida (RKKY) interactions. Firstly, in order to numerically calculate the two impurity Anderson model, we use quantum Monte Carlo technique. When the impurity adatoms are located far from edges, the results we obtained are consistent whit the bulk graphene results in the literature. On the other hand, the specific location and orientation of adatoms on the sublattices, significantly affects the spin-spin correlations of the two impurities. However, we observe that while the adatoms approach to the edges, significant differences occur due to the edge effect of zigzag graphene nanoribbon. As a results of this, we found that the magnetic correlations can be also enhanced if the adatoms belong to the same sublattice as the edga atoms, since the states of the adatoms hybridize with edge states. Moreover, we show that chaning chemical potential can crucially affect the magnitude of the correlations of the adatoms, and may lead to aphase transitions from ferromagnetic to antiferromagnetic or vice versa. Besides, we observe that when the width of the zigzag graphene nanoribbons is decreased, the spin-spin correlations are affected.On the other hand, we also calculated spin-spin correlations using mean-field approximation for themean-field Anderson model. We found that results significantly differ from quantum Monte Carlo results. In addition, when the electron-electron interations of he host atoms are taken into account, crucial differences are obtained at the impurity correlations.Master Thesis Disorder Induced Electronic and Magnetic Properties of Graphene Quantum Dots(Izmir Institute of Technology, 2019) Kul, Erdoğan Kul; Güçlü, Alev Devrim; Güçlü, Alev Devrim; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this thesis, we aim to study magnetic properties of hexagonal shaped graphene quantum dots with armchair edge in the case of atomic collapse by modelling two vacancies on it. The measured relativistic electron transport property of the graphene allows us to observe the phenomenon called "atomic collapse" in a small energy scale which existence is proven theoretically before for atoms whose atomic number is higher than 170. First we modelled a Coulomb potential at the center of a hexagonal shaped and armchair edged GQD and examined by using tight-binding method. We obtain similar results with previous works. After that, we started to study magnetic properties of the dot by meanfield Hubbard method which includes spins into calculation. We modelled a vacancy close to the center of the dot and examined electronic and magnetic properties by MFH metod. Also we modelled two vacancies on the dot that we changed the distance between them and the direction respectively. Also by applying Coulomb potential at the center of the vacancies we examined magnetic behaviour at the atomic collapse regime. Also, we compared our results with the works obtained by using RKKY (Ruderman-Kittel- Kasuya-Yosida) interaction method which considers the indirect interactions of magnetic impurities that uses electrons of metallic substrates. We found that increasing Coulomb potential and increasing distance between the vacancies, reduces correlations of electrons around the vacancies. The ground state energy difference between ferromagnetic and antiferromagnetic systems, that proportional to interaction strength, shows similar behaviour that has been observed by using RKKY method. Also if we take out two atoms from the same sublattice and with the same spin property, changing Coulomb potential leads to ferromagnetic-anti-ferromagnetic phase transition, independent from the atomic collapse behaviour. Also we observed that there is no direct link between the magnetic transition and the energy difference of the vacancy states.Master Thesis Monitoring the Diffusion and Degradation Characteristics of Crystals Via Raman Spectroscopy(Izmir Institute of Technology, 2018) Akbalı, Barış; Şahin, Hasan; Şahin, Hasan; 04.04. Department of Photonics; 04. Faculty of Science; 01. Izmir Institute of TechnologyLamellar structures, having strong in-plane and weak (van der Waals) out-ofplane bonding, exhibit extraordinary properties when thinned down to their monolayer limit. Following the isolation of single layer graphene in 2004, there has been a rapid increase in the number of studies focusing on other novel two dimensional (2D) materials such as hexagonal Boron Nitride (BN), transition metal dichalcogenides (TMDs), post transition metal chalcogenides (PTMCs), silicene and black-phosphorus. Doping of 2D and bulk crystals is a well-known strategy that may lead to novel functionalities and significantly alters materials’ electronic, optical, and magnetic properties. In this regard, understanding of diffusion characteristic of dopant in a crystal via computational simulation is vital to enlighten physical insights of the experiment. In addition, investigation of degradation mechanisms of crystals at atomic-level is also still open question. In this sense, the density functional theory (DFT) is one of the most powerful and commonly used methods for such theoretical investigations. Moreover, measuring vibrational spectra of a material via Raman spectroscopy is powerful method to understand atomic vibrations that give information about physical properties of a material. In this regards, we investigate diffusion characteristics and degradation mechanism of several crystal (such as, perovskites and MoS2) by means of first-principles calculations based on density functional theory (DFT). In addition, Raman measurements are also carried out to investigate vibrational properties of the crystals. It is shown that few-layer MoS2 can be used for selective nitrogenation of graphene. In addition, red shift in photoluminescence peak of water interacted CsPbBr3 nanowires arise from detachment of surface ligand from surface of nanowire by presense of water molecules. Lastly, time-dependent photoluminescence measurement of Mn-doped CsPbCl3 shows that change in emission color under UV illumination is due to segregation of Mn atoms towards crystal surface. This thesis provides some important results for deeper understanding of degradation and diffusion mechanisms of dopants in 2D materials and perovskites.Master Thesis Effects of Random Atomic Disorder on Electronic and Magnetic Properties of Graphene Nanoribbons(Izmir Institute of Technology, 2018) Çakmak, Korhan Ertan; Güçlü, Alev Devrim; Güçlü, Alev Devrim; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this thesis, We investigate the effects of randomly distributed atomic defects on the magnetic and electronic properties of graphene nanoribbons with zigzag edges using an extended mean-field Hubbard model. We show that electron-electron interaction effects not only make defect states robust as compared with the tight-binding results,but also make edge states fragile even at low defect concentration for clean edge sites. For a balanced defect distribution among the sublattices of the honeycomb lattice in the bulk region of the ribbon, the ground state antiferromagnetism of the edge states remains unaffected. By analyzing the excitation spectrum, we show that while the antiferromagnetic ground state is susceptible to single spin flip excitations from edge states to magnetic defect states at low defect concentrations, it’s overall stability is enhanced with respect to the ferromagnetic phase. Then, we investigated Anderson localization induced metal to insulator transition by a localization length in nanometer scale up to 5% vacancy concentration by using time dependent results. We found that, Anderson localization is stronger at the vicinity of Fermi level energy states since those states are becoming full of impurity states and edge states, mixed.Master Thesis The Effect of Atmospheric Gases on the Electrical Stability of Graphene(Izmir Institute of Technology, 2017) Kalkan, Sırrı Batuhan; Çelebi, Cem; Çelebi, Cem; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this thesis, adsorbate induced variations in the electrical conductivity of graphene layers with two different types of charge carriers are investigated experimentally by using Transient Photocurrent Spectroscopy (TPS) method. In-vacuum TPS measurements taken for a duration of 5 ks, revealed that the adsorption/desorption of atmospheric adsorbates leads to a 45 % incerment and 110 % decrement in the conductivity of CVD graphene (p--type) and epitaxial graphene (n-type) layers on semi-insulation (SI) Silicon Carbide (SiC) substrates, respectively. The graphene layers on SI-SiC substrates are encapsulated and passivated with thin SiO2 film grown by Thermal Evaporation and Pulsed Electron Deposition (PED) techniques. The mesurements conducted for short periods and a few cycles showed that the thermal passivation of graphene layers is insufficient. However, the PED encapsulation process completely suppresses the time-dependent conductivity instability of graphene independent of its charge carrier type. The obtained results are used the construct an experimental model for identifying adsorbate related conductivity variations in graphene and also in other 2D materials with inherently high surface-to-volume ratio.Master Thesis Electronic, Magnetic and Optical Properties of Graphene Nanoribbons(Izmir Institute of Technology, 2016) Özdemir, Hakan Ulaş; Güçlü, Alev Devrim; Güçlü, Alev Devrim; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of TechnologyIn this thesis, electronic, magnetic and optical properties of graphene nanoribbons are investigated within mean-field Hubbard model with two different disorder type; long and short range in finite and cyclic topology. First we investigated combined effect of electron-electron interaction effects and long range potential fluctuations. In both of the geometries, electron-electron interaction effects make edge states robust against disorders. Furthermore, surprisingly, strong enough disorder causes system to experience a phase transition from antiferromagnetically coupled edge states to ferromagnetic coupling in agreement with recent theoretical and experimental studies. Then, the stability of optical conductance under impurity effects, correlation between optical characteristic and magnetic phase of ZGNR is investigated, respectively. Similar to edge state density profile recovery, electronic interaction effects reduce the impurity induced peak around Fermi level. More importantly, we found distinct optical transitions due to edge-bulk mixed states around Fermi level that can be used to detect whether ZGNR is in antiferromagnetic or ferromagnetic phase. Finally, we investigated the disorder induced metalinsulator transition. Since, long range impurities protect the sublattice symmetry and leads to phenomena known as ”absence of backscattering”, there exist minimum conductivity for graphene. On the other hand, in order to model hydrogenation effects, we used short range impurity potential which breaks the sublattice symmetry. Using a time dependent tight binding model, we observed Anderson localization induced metal to insulator transition with a nanometer scale localization length for 2% hydrogen coverage. We found that, Anderson localization is stronger at high energy valence states since those states are more vulnerable to hydrogenation.