Master Degree / Yüksek Lisans Tezleri
Permanent URI for this collectionhttps://hdl.handle.net/11147/3008
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Master Thesis Indium Tin Oxide (ito) Coating on Cylindricalsurfaces: Electrical and Structural Characterization(Izmir Institute of Technology, 2015) Arslan, Halil; Aral, Gürcan; Özyüzer, Lütfi; Özyüzer, Lütfi; Aral, GürcanOptical transparent conductive oxides (TCOs) which were discovered in the first quarter of twentieth century, and which belong to the class of semiconductor elements, are the constituent of today’s and future technology thanks to the high optical transparency ( ≥ % 85) they have in the visible region (390- 700 nm), and to the low electrical resistivity they have (10-4 ohm.cm). One of the most common usage of optical transparent conductive oxides; which have a quite extensive application area from transistors to solar panels, from flexible screens to OLEDs; is the textile materials known as smart clothes. The use of TCOs in textile materials, generally occurs by means of electrochromic structures that have the feature of changing color. In the most general sense, electrochromic structures can be defined as the materials that change their colors, which they gain thanks to reduction and oxidation reactions under a low potential difference of 1.5 – 5V, as a transition from one color state to another or from colorless state to color state. Even though they differ according to their area of utilization, electrochromic structures are generally consisted of seven layers as; Surface / conductive thin film (TCO) / Electrolyte film / Ionic conductive layer / Opposite electrolyte film / Conductive thin film (TCO) / and Surface. Electrical conductor and optical transparent indium doped tin oxide (ITO) film that are of vital importance in electrochromic fiber structures, were deposited on the fiber surface along with the specially-designed magnetic sputter in order to coat the cylindrical surfaces within the scope of the thesis. Film deposition was repeated by replacing the ionizing gas (Ar) flow rate and the energy applied. While the structural characterization of thin films was carried out by means of optical microscope and scanning electron microscope (SEM), electrical characterization of deposited thin film, was carried out by a multi-meter (Ohm meter). In addition, the thickness of thin film that was magnified on the surface of the fiber, was calculated by SEM particularly, and also by different methods. As a result of the analyzes carried out, it was observed that ~ 40 sccm ionizing gas flow rate, 90 W applied energy, and 119 cm/min fiber feed rate increased the quality of the thin film acquired.Master Thesis Applications of Transparent Conductive Indium Tin Oxide Films in Automotive and Vitrifications Industries(Izmir Institute of Technology, 2009) Tuna, Öcal; Selamet, Yusuf; Selamet, YusufDue to its unique electrical and optical properties, highly doped n-type Indium tin oxide used for various applications such as smart glass, LCDs, OLEDs, solar cells and car windows. In this study Indium Tin Oxide (ITO) thin films were grown by both DC and RF magnetron sputtering techniques. To know deposition rate of ITO, system was calibrated for both DCMS and RFMS and then ITO were grown on glass substrate with the thickness of 70 nm and 40 nm by changing substrate temperature. The effect of substrate temperature, film thickness and sputtering method on structural, electrical and optical properties were investigated. Wan der Pauw method was used for electrical characterization and to use this method properly, we patterned ITO thin films by photolithography and Ion beam etching techniques. The results show that substrate temperature and film thickness substantially affects the film properties, especially crystallization and resistivity. The thin films grown at the lower than 150 oC showed amorphous structure. However, crystallization was detected with the further increase of substrate temperature. Substrate temperature and film thickness increment were lead to increase band gap of ITO which can be explained by BMS. Band gap of ITO was calculated to be about 3.64 eV at the substrate temperature of 150 oC, and it widened with substrate temperature increment. From electrical measurements the resistivity at room temperature was obtained 1.28*10 and 1.29*10 cm, for DC and RF sputtered films, respectively. We also measured temperature dependence resistivity and the Hall coefficient of the films, and we calculated carrier concentration and Hall mobility.