Master Degree / Yüksek Lisans Tezleri

Permanent URI for this collectionhttps://hdl.handle.net/11147/3008

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2008 - 20103

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Publisher: search.filters.publisher.Izmir Institute of TechnologySubject: search.filters.subject.Josephson effect

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  • Master Thesis
    Reactive Ion Beam Etching and Characterization of High-Tc Superconductor Bi2212
    (Izmir Institute of Technology, 2009) Köseoğlu, Hasan; Özyüzer, Lütfi; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    The lack of coherent, continuous and tunable compact solid-state sources of electromagnetic radiations at terahertz (THz) frequency range (0.3-30 THz) can be solved by high temperature superconductors (HTS) which are better candidates for generation of THz radiation. THz sources have potential application areas in materials characterization, biology, communication, medicine and security. The HTSs have large energy gap intervals which are available for radiations at THz frequency range, so recently, they were used as better converters from DC-voltage to high frequency radiation in junction technologies. Bi2Sr2CaCu2O8+. (Bi2212) HTS single crystals include natural superconductor-insulator-superconductor multi-junctions called intrinsic Josephson junctions. For generation of coherent continuous and powerful THz radiations, we have fabricated large and tall mesas on Ca rich Bi2212, although mesas with small planar and lateral dimensions were preferred in recent studies because of the heating effect. We have used underdoped Bi2212 to control the heating problem. By using the vacuum thermal evaporation, optical photolithography, magnetron sputtering and reactive ion beam etching techniques, the mesas with size of 40-100x300 um2 have been fabricated by using single layer mask (PR) and two different multilayer masks, which are Ta/PR and PR./Ta/PR. Their heights and lateral dimensions were analyzed by Atomic Force Microscopy, profilometer and SEM. We have investigated temperature dependence of c-axis resistivity and current-voltage (I-V) tunneling characteristics of under-doped Bi2212 which exhibit exponentially increases in resistivity from 300 K to Tc. The influences of heating effect were analyzed at temperature evolution of I-V measurements. Finally, bolometric detections of emission from long edges of mesas were done.
  • Master Thesis
    Temperature Dependence of Tunneling in Intrinsic Josephson Junctions of High Temperature Superconductors
    (Izmir Institute of Technology, 2008) Şimşek, Yılmaz; Özyüzer, Lütfi; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    The lack of coherent, continuous and tunable compact solid-state sources of electromagnetic radiations at terahertz (THz) frequency range (0.3-30 THz) can be solved by high temperature superconductors (HTS) which are better candidates for generation of THz radiation. THz sources have potential application areas in materials characterization, biology, communication, medicine and security. The HTSs have large energy gap intervals which are available for radiations at THz frequency range, so recently, they were used as better converters from DC-voltage to high frequency radiation in junction technologies. Bi2Sr2CaCu2O8+8 (Bi2212) HTS single crystals include natural superconductor-insulator-superconductor multi-junctions called intrinsic Josephson junctions. For generation of coherent continuous and powerful THz radiations, we have fabricated large and tall mesas on Ca rich Bi2212, although mesas with small planar and lateral dimensions were preferred in recent studies because of the heating effect. We have used under-doped Bi2212 to control the heating problem. The mesas with size of 100x300 .m2 have been fabricated by vacuum evaporation, photolithography analyzed by Atomic Force Microscopy. We have investigated temperature dependence of c-axis resistivity and current-voltage (I-V) tunneling characteristics of under-doped Bi2212 which exhibit exponentially increases in resistivity from 300 K to Tc. The influences of heating effect were analyzed at temperature evolution of I-V measurements. Finally, bolometric detections of emission from long edges of mesas were done.
  • Master Thesis
    Spin Polarized Tunneling in Large Area Mesas of Superconducting Bi2sr2cacu2o8+d for Terahertz Emission
    (Izmir Institute of Technology, 2010) Türkoğlu, Fulya; Özyüzer, Lütfi; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    There is an increasing interest in science and technology of electromagnetic waves in terahertz frequency range (0.1-10 THz) because of their emerging application areas including physics, biology, chemistry, astronomy, medicine etc. The observation on generation of THz radiation emitted from lateral dimension of high temperature superconductor (HTS) Bi2Sr2CaCu2O8+.. (Bi2212) and responses to THz waves increase the importance of these HTSs. Single crystal of HTS Bi2212 forms natural superconductor-insulator-superconductor (SIS) layered junctions, which are called intrinsic Josephson junctions (IJJ). The stacks of IJJs in Bi2212 can be used such a voltage-frequency converter and their large energy gap allows the emissions at THz frequency range. Recently, it has been demonstrated that rectangular IJJ mesa structures of Bi2212 can be used as a source of continuous, coherent and polarized THz radiation. It was shown that all THz emitting mesas are below a certain underdoped level, which has relatively small critical current in contrast to optimally doped and overdoped Bi2212. In this work, rectangular Au/Co/Au/Bi2212 mesa structures with large areas and high thicknesses were fabricated on as-grown Bi2212 single crystals using standard photolithograph and Ar ion beam etching techniques. In order to characterize the mesas, c-axis resistance versus temperature (R-T) and current-voltage (I-V) characteristics were investigated. During I-V characterization, Si composite bolometer was used to detect the emission. We obtained small critical current from as-grown mesas due to injection of spin polarized current. We observed THz emission peak for one of the mesas which has low quasiparticle conductivity and low dissipation due to its small critical current density. It means that the adjustment of doping level can be eliminated for THz emission by the injection of spin polarized current through the c-axes of the asgrown mesas.