Master Degree / Yüksek Lisans Tezleri

Permanent URI for this collectionhttps://hdl.handle.net/11147/3008

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2008 - 200932010 - 20131

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Publisher: search.filters.publisher.Izmir Institute of TechnologySubject: search.filters.subject.Josephson junctions

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Now showing 1 - 4 of 4
  • Master Thesis
    Fabrication and Characterizarion of Superconductor Ybco Josephson Junctions
    (Izmir Institute of Technology, 2008) Algül, Berrin Pınar; Abukay, Doğan; Abukay, Doğan; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    A well-controlled, high-yield Josephson junction production process forms the basis of superconducting electronic device and circuit technology. In order to use the Josephson junctions effectively and fabricate them reproducibly, their structural and electrical characterization should be performed.This study concentrates on the fabrication and characterization of high temperature bicrystal grain boundary Josephson junctions fabricated onto 24-dand 30-degree SrTiO3 bicrystal substrates using high quality YBa2Cu3O7-. (YBCO) thin-films.200 nm thick YBCO thin films were deposited using a dc Inverted Cylindrical Magnetron Sputtering technique by investigating the thin film deposition conditions in order to obtain device quality films. The superconducting properties of the thin films were determined by electrical characterizations, consisting of resistance versus temperature and magnetic susceptibility versus temperature measurements. Structural properties were analyzed by Atomic Force Microscope, Scanning Electron Microscope and X-Ray Diffraction.Prepared thin film samples were patterned as bicrystal grain boundary Josephson junctions by standard photolithography and chemical etching processes. The current-voltage characteristics of the Josephson junctions were performed at 77 K under zero and non-zero applied field in magnetically shielded environment. The critical current values (Ic), normal resistance (Rn) and IcRn product of the output signals were determined, and the values were discussed as function of the film growth conditions. The optimization of the Josephson junctions was performed in order to improve both the signal performance and the stability of our devices against thermal cycling.
  • Master Thesis
    Reactive Ion Beam Etching and Characterization of High-Tc Superconductor Bi2212
    (Izmir Institute of Technology, 2009) Köseoğlu, Hasan; Özyüzer, Lütfi; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    The lack of coherent, continuous and tunable compact solid-state sources of electromagnetic radiations at terahertz (THz) frequency range (0.3-30 THz) can be solved by high temperature superconductors (HTS) which are better candidates for generation of THz radiation. THz sources have potential application areas in materials characterization, biology, communication, medicine and security. The HTSs have large energy gap intervals which are available for radiations at THz frequency range, so recently, they were used as better converters from DC-voltage to high frequency radiation in junction technologies. Bi2Sr2CaCu2O8+. (Bi2212) HTS single crystals include natural superconductor-insulator-superconductor multi-junctions called intrinsic Josephson junctions. For generation of coherent continuous and powerful THz radiations, we have fabricated large and tall mesas on Ca rich Bi2212, although mesas with small planar and lateral dimensions were preferred in recent studies because of the heating effect. We have used underdoped Bi2212 to control the heating problem. By using the vacuum thermal evaporation, optical photolithography, magnetron sputtering and reactive ion beam etching techniques, the mesas with size of 40-100x300 um2 have been fabricated by using single layer mask (PR) and two different multilayer masks, which are Ta/PR and PR./Ta/PR. Their heights and lateral dimensions were analyzed by Atomic Force Microscopy, profilometer and SEM. We have investigated temperature dependence of c-axis resistivity and current-voltage (I-V) tunneling characteristics of under-doped Bi2212 which exhibit exponentially increases in resistivity from 300 K to Tc. The influences of heating effect were analyzed at temperature evolution of I-V measurements. Finally, bolometric detections of emission from long edges of mesas were done.
  • Master Thesis
    Temperature Dependence of Tunneling in Intrinsic Josephson Junctions of High Temperature Superconductors
    (Izmir Institute of Technology, 2008) Şimşek, Yılmaz; Özyüzer, Lütfi; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    The lack of coherent, continuous and tunable compact solid-state sources of electromagnetic radiations at terahertz (THz) frequency range (0.3-30 THz) can be solved by high temperature superconductors (HTS) which are better candidates for generation of THz radiation. THz sources have potential application areas in materials characterization, biology, communication, medicine and security. The HTSs have large energy gap intervals which are available for radiations at THz frequency range, so recently, they were used as better converters from DC-voltage to high frequency radiation in junction technologies. Bi2Sr2CaCu2O8+8 (Bi2212) HTS single crystals include natural superconductor-insulator-superconductor multi-junctions called intrinsic Josephson junctions. For generation of coherent continuous and powerful THz radiations, we have fabricated large and tall mesas on Ca rich Bi2212, although mesas with small planar and lateral dimensions were preferred in recent studies because of the heating effect. We have used under-doped Bi2212 to control the heating problem. The mesas with size of 100x300 .m2 have been fabricated by vacuum evaporation, photolithography analyzed by Atomic Force Microscopy. We have investigated temperature dependence of c-axis resistivity and current-voltage (I-V) tunneling characteristics of under-doped Bi2212 which exhibit exponentially increases in resistivity from 300 K to Tc. The influences of heating effect were analyzed at temperature evolution of I-V measurements. Finally, bolometric detections of emission from long edges of mesas were done.
  • Master Thesis
    Area Dependence of Josephson Critical Current Density in Superconducting Bi2sr2cacu2o8+d Mesas for Terahertz Emission
    (Izmir Institute of Technology, 2013) Sağlam, Hilal; Özyüzer, Lütfi; Özyüzer, Lütfi; 04.05. Department of Pyhsics; 04. Faculty of Science; 01. Izmir Institute of Technology
    There are numerous application fields of terahertz waves such as airport screening of passengers for weapons, explosives, drugs, secure wireless communications, cancer detection, etc. high-Tc superconductor Bi2Sr2CaCu2O8+δ (Bi2212) single crystal has been observed as an intense, coherent, continuous electromagnetic wave source in terahertz frequency region. Bi2212, which is highly anisotropic high-Tc superconductor, is considered as a stack of intrinsic Josephson junctions (IJJs) on atomic scale. In this study, we have fabricated triple mesa structures on a same chip with various mesa areas (300x50, 200x50, 100x50 μm2). Firstly, single crystal of Bi2212 is glued onto a sapphire substrate from its smooth a-b surface by silver epoxy. After deposition of 100 nm Au layer, rectangular mesa structures were fabricated on the surface of an under-doped Bi2212 crystal by using e-beam lithography and Ar-ion etching step by step. On account of the difficulties in making a contact on small area of the mesa, CaF2 insulating layer deposition was performed. After that, a gold stripe with the width of 30 μm was created by lift-off technique on the mesa and CaF2 layer. Finally, three gold probe wires were connected to the two contact paths and mesa by silver epoxy. After the mesa fabrication, the exact dimensions of the mesas were obtained using atomic force microscope. To obtain the electrical characterization, c-axis resistance versus temperature (R-T), and current-voltage behavior (I-V) were measured. From I-V characteristics, critical current of each mesa structure having different dimension was obtained, after that, we have calculated the critical current densities of each mesa structure and then we have studied change in Josephson critical current density of mesas with different dimensions. We can conclude from the I-V measurements of the mesas that the Josephson critical current density is decreasing when the area of mesa is increasing. Furthermore, the backbending voltage points are increasing since heating effects dominate for the large areas of the mesa structures.