WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7150

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Access type: Open accessSubject: search.filters.subject.Buffer layer

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  • Article
    Citation - WoS: 28
    Citation - Scopus: 29
    Enhancing the Efficiency of Mixed Halide Mesoporous Perovskite Solar Cells by Introducing Amine Modified Graphene Oxide Buffer Layer
    (Elsevier, 2020) Şahin, Çiğdem; Diker, Halide; Sygkridou, Dimitra; Varlıklı, Canan; Stathatos, Elias
    In this study, graphene oxide (GO) was synthesized via Tour method and then modified with two different amine sources that contained different branched alkyl chains. The GO and modified GOs (mGOs) with dihexylamine (DHA) and 2-ethylhexylamine (2EHA) as amine sources were used respectively as buffer layers in mixed halide mesoporous perovskite solar cells (PSCs) in order to examine whether they could improve their performance. GO and mGO samples were characterized by several techniques such as X-Ray Diffraction, X-Ray photoelectron spectroscopy (XPS), Raman analysis and thermal gravimetric analysis (TGA). The preparation of the CH3NH3PbI3-xClx perovskite solution was performed using standard Schlenk techniques under argon atmosphere to attain a homogeneous coverage of the perovskite film. The solar cells with the additional layer of mGO derivatives between perovskite and hole transporting layer showed an improved overall performance compared to the reference devices which was attributed to the enhanced charge carrier transport via the mGOs. In particular, 10% increase to the overall performance of the solar cells was monitored in devices where 2-ethylhexylamine (2EHA) modified GO was used, compared to standard cell without buffer layer. (C) 2019 Elsevier Ltd. All rights reserved.
  • Article
    Citation - WoS: 21
    Citation - Scopus: 24
    Effect of Defects and Secondary Phases in Cu2znsns4 Absorber Material on the Performance of Zn(o,s) Buffered Devices
    (Elsevier Ltd., 2019) Türkoğlu, Fulya; Köseoğlu, Hasan; Cantaş, Ayten; Akça, Fatime Gülşah; Meriç, Ece; Buldu, Dilara Gökçen; Aygün, Gülnur
    Copper zinc fin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu)/Tin (Sn)/Zinc (Zn)/Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as fin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.