WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Article Citation - WoS: 1Improving the Stability of Ink-Jet Printed Red Qleds by Optimizing the Device Fabrication Process(Eurasia Acad Publ Group (eapg), 2024) Diker, Halide; Unluturk, Secil Sevim; Ozcelik, Serdar; Varlikli, CananRed-light emitting Cadmium Sulfide 0.8 Selenide 0.2 /Zinc Sulfide (CdS (0.8) Se (0.2) /ZnS) based quantum dots (QDs) were synthesized by hot injection method and utilized as the emissive layer in the quantum dot light emitting diode (QLED) with the device structure of Indium Tin Oxide/Poly(3,4-ethylenedioxythiophene): Polystyrene Sulfonate / Polyvinylcarbazole(or Poly(N,N '-bis-4-butylphenyl-N,N '-bisphenyl)benzidin) /QD/ZincOxide/LithiumFluoride/ Aluminum [ ITO/ PEDOT: PSS/ PVK(or p-TPD )/QD/ZnO/LiF/Al]. QD inks were formulated and prepared octane: decane; (1/1, v/v) solvent system and mixed with the nonionic surfactant, TritonX-100, to make the QD inks inkjet printable. In addition to the inkjet printing technique, spin coating was also employed to form the QD emissive layer for comparing device performance. Compared to the p-TPD-based QLED device, the PVK-based device fabricated via spin coating exhibited similar to 6 -fold higher performance in terms of luminance and efficiency values. In the case of using the ink -jet printer, similar to 2 -fold higher maximum luminance value and slightly lower external quantum efficiency at the lower current density region were obtained in the p-TPD-based device. Furthermore, compared to the PVK layer, the p-TPD layer provided higher device stability regardless of the coating method the higher current density regions. We suggest that the coating method applied and the choice of hole transport layer (HTL) materials may control the device parameters.Conference Object Citation - WoS: 3Citation - Scopus: 2Fabrication and Characterization of a Solution Processed Flexible Thermal Sensor by Using Chemically Synthesized Go and Rgo(Institute of Electrical and Electronics Engineers Inc., 2019) Bozkurt, Hakan; Diker, Halide; Varlıklı, CananGraphene oxide (GO) was reduced by ascorbic acid which is an environmental-friendly reductant and obtained sample was named as reduced GO (rGO). Stable dispersions of GO and rGO were prepared in N,N-Dimethylformamide (DMF). Compared to GO sample, rGO was determined to have more thermal stability, smaller sheet size and lower surface energy. GO and rGO dispersions were drop-casted on aluminum (Al) coated acetate substrate and used as thermal sensor. Fabricated sensors were tested from 25 °C to 150 °C. The sensors fabricated with GO, were not stabile against driven temperature changes. However, rGO ones, presented no thermal hysteresis effect after the first heating step. This sensor (Al/rGO/Al) acted like an NTC (Negative Temperature Coefficient) thermistor. The resistance of the rGO sensor was changed between 42 k? to 25 k? depending on the test temperature range (25 °C to 150 °C). Average beta value was calculated as 519.7649 K. © 2019 IEEE.