WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Article Nagaoka Ferromagnetism in Semiconductor Artificial Graphene(IOP Publishing Ltd, 2026) Oztarhan, Gokhan; Potasz, Pawel; Guclu, A. D.We present the emergence of Nagaoka ferromagnetism in semiconductor-based artificial graphene with realistic Coulomb interaction using high-precision variational and diffusion Monte Carlo methods, complemented by exact diagonalization calculations of the generalized Hubbard model. We analyze models of armchair hexagonal geometries nanopatterned on GaAs quantum wells. Our results reveal a distinct magnetic phase transition driven by the absence/addition of a single electron at half-filling. This form of itinerant magnetism, predicted rigorously for the Hubbard model, remained unascertained in large scale realistic systems. We demonstrate that Coulomb scattering terms play a crucial role in stabilizing Nagaoka ferromagnetism, enabling the observation of the phase transition for system parameters near U/t approximate to 60.Article Citation - WoS: 11Citation - Scopus: 12Prevalence of Oxygen Defects in an In-Plane Anisotropic Transition Metal Dichalcogenide(American Physical Society, 2020) Plumadore, Ryan; Boddison-Chouinard, Justin; Lopinski, Gregory; Modarresi, Mohsen; Potasz, Pawel; Luican-Mayer, Adina; Başkurt, Mehmet; Şahin, HasanAtomic scale defects in semiconductors enable their technological applications and realization of different quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS2. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.Book Part Citation - WoS: 93Graphene quantum dots preface(Springer Verlag, 2014) Güçlü, Alev Devrim; Potasz, Pawel; Korkusinski, Marek; Hawrylak, Pawel[No abstract available]Article Citation - WoS: 29Citation - Scopus: 31Wigner Crystallization in Topological Flat Bands(IOP Publishing Ltd., 2018) Jaworowski, Blazej; Güçlü, Alev Devrim; Kaczmarkiewicz, Piotr; Kupczynski, Michal; Potasz, Pawel; Wójs, ArkadiuszWe study the Wigner crystallization on partially filled topological flat bands of kagome, honeycomb and checkerboard lattices. We identify the Wigner crystals (WCs) by analyzing the Cartesian and angular Fourier transform of the pair correlation density of the many-body ground state obtained using exact diagonalization. The crystallization strength, measured by the magnitude of the Fourier peaks, increases with decreasing particle density. The Wigner crystallization observed by us is a robust and general phenomenon, existing in all three lattice models for a broad range of filling factors and interaction parameters. The shape of the resulting WCs is determined by the boundary conditions of the chosen plaquette. It is to a large extent independent on the underlying lattice, including its topology, and follows the behavior of classical point particles.