WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Conference Object Native and Light Induced Defect States in Wide Band Gap Hydrogenated Amorphous Silicon-Carbon (a-Si1 : H) Alloy Thin Films(Springer, 1997) Güneş, MehmetIn this study, wide band gap a-Si1-x C-x:H alloy thin films prepared with and without hydrogen diluation of (SiH4, CH4) were characterized using optical absorption, dark conductivity, steady-state photoconductivity, sub-bandgap absorption obtained with both photothermal deflection spectroscopy (PDS) and dual beam photoconductivity (DBP), and electron spin resonance (ESR) techniques. Experimental results of steady-state photoconductivity and sub-bandgap absorption for different generation rates were analyzed using a detailed numerical model based on Simmons-Taylor statistics. The densities, energy location and nature of the native and light induced defect states in diluted and undiluted a-Si1-xCx:H alloy thin films were derived from the best fits to the experimental data. The extracted parameters for defect states were compared with those of a-Si:H films both in the annealed and light degraded states.Article Citation - WoS: 15Citation - Scopus: 141/F-noise Study of Undoped Intrinsic Hydrogenated Amorphous Silicon Thin Films(American Physical Society, 1999) Güneş, Mehmet; Johanson, Robert E.; Kasap, Safa O.Conductance fluctuations in four samples of undoped intrinsic hydrogenated amorphous silicon (a-Si:H) were measured in the temperature range of 450 K to 500 K and for frequencies from 2 Hz to 3 kHz. The noise spectra divide into two regions that each fit a 1/fα power law but with different slope parameters α and different temperature dependences. At low frequencies, α is greater than unity and increases with temperature. At high frequencies, α is near 0.6 and temperature independent, but the noise magnitude decreases rapidly with temperature. We infer from the different dependences on temperature that the noise is generated by two independent mechanisms operating simultaneously in a-Si:H. We also observe that the 1/f noise exhibits a quadratic dependence on bias current and Gaussian statistics.Article Citation - WoS: 2Citation - Scopus: 3The Amido and Bisalkoxo-Complexes of [tri(3,5-Dimethylpyrazolyl)borato]molydenum Nitrosyl(TÜBİTAK, 1998) Topaloğlu, IşılIn this study, the amido nitrosyl molybdenum complex, [Mo{HM(3,5-Me2C3HN2)3}(NO)Cl(NH 2)], was prepared. This compound reacts with alocohols, yielding the bisalkoxo complexes, [Mo{HM(3,5-Me2C3HN2)3}(NO)(OR) 2] (R = Me, Et, Prn, Bun). The new complexes were analyzed by IR and 1H-NMR spectroscopy.Conference Object Progress Depends on Unbalance and Disorder(Institute of Electrical and Electronics Engineers Inc., 1997) Özcan, A. CanTechnology is a state of progress which depends on unbalanced structures of human functions and relations. Technology was once the vital element of mankind to survive in nature. But today, technology has reached a perfection level above any natural entity including homo technologicus. Thus, the natural selection has become the technological selection, and technology which was once a servant for mankind, has become the master. An attitude towards life which does not depend on ethical, logical or aesthetic principles only brings high technology to the wealthy and the powerful, discriminating the rest including nature itself.Article Adsorption Equilibrium and Dynamics of Lactase/Cm-sephadex System(Kluwer Academic Publishers, 1995) Harsa, Hayriye Şebnem; Göksungur, Yekta; Güvenç, UlgarPartitioning behaviour and adsorption isotherms of lactase/CM-Sephadex system at equilibrium were investigated together with the adsorption kinetics in this study. Maximum adsorption was obtained at the pH values between 5.5–6.0. Adsorption isotherm was a close fit to the Langmuir model.