WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7150

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Start date: 2020Subject: search.filters.subject.Photoluminescence

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  • Article
    Disorder-Engineered Hybrid Plasmonic Cavities for Emission Control of Defects in hBN
    (American Chemical Society, 2026) Genc, Sinan; Yucel, Oguzhan; Aglarci, Furkan; Rodriguez-Fernandez, Carlos; Yilmaz, Alpay; Caglayan, Humeyra; Bek, Alpan; 01. Izmir Institute of Technology
    Defect-based quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for scalable quantum photonics due to their stable single-photon emission at room temperature. However, enhancing their emission intensity and controlling the decay dynamics remain significant challenges. This study demonstrates a low-cost, scalable fabrication approach to integrate plasmonic nanocavities with defect-based quantum emitters in hBN nanoflakes. Using the thermal dewetting process, we realize two distinct configurations: stochastic Ag nanoparticles (AgNPs) on hBN flakes and hybrid plasmonic nanocavities formed by AgNPs on top of hBN flakes supported on gold/silicon dioxide (Au/SiO2) substrates. While AgNPs on bare hBN yield up to a 2-fold photoluminescence (PL) enhancement with reduced emitter lifetimes, the hybrid nanocavity architecture provides a dramatic, up to 100-fold PL enhancement and improved uniformity across multiple emitters, all without requiring deterministic positioning. Finite-difference time-domain (FDTD) simulations and time-resolved PL measurements confirm size-dependent control over decay dynamics and cavity-emitter interactions. Our versatile solution overcomes key quantum photonic device development challenges, including material integration, emission intensity optimization, and spectral multiplexity.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 2
    Scalable Growth of Optically Uniform Mows2 Alloys by Sulfurization of Ultrathin Mo/W Stacks
    (Elsevier Sci Ltd, 2025) Şahin, Hasan; Schiliro, Emanuela; Koos, Antal; Kutlu, Tayfun; Sahin, Hasan; Roccaforte, Fabrizio; Giannazzo, Filippo; 04.04. Department of Photonics; 04. Faculty of Science; 01. Izmir Institute of Technology
    Two-dimensional (2D) transition metal dichalcogenides (TMDs) ternary alloys, such as MoxW1-xS2, are very appealing for the possibility of continuously tuning their excitonic bandgap by the composition. However, the deposition of ultra-thin (monolayers or few-layers) alloys with laterally uniform composition on large area represents a main challenge of currently adopted synthesis methods. In this work, we demonstrated the growth of highly uniform Mo0.5W0.5S2 bi-layers on cm2 size SiO2/Si substrates by employing a simple and scalable approach, i.e. the sulfurization of a pre-deposited ultra-thin Mo/W stack at a temperature of 700 degrees C. Comparison of Mo(1.2 nm)/SiO2, W(1.2 nm)/SiO2, and Mo(1.2 nm)/W(1.2 nm)/SiO2 samples after identical sulfurization conditions revealed very different results, i.e. (i) a uniform monolayer (1L) MoS2 film, (ii) separated multilayer WS2 islands, and (iii) a uniform bilayer (2L) Mo0.5W0.5S2 film. This indicates how W surface diffusion and coalescence on SiO2 surface plays a main role in WS2 islands formation, whereas the reaction between S vapour with Mo films or Mo/W stacks represents the dominant mechanism for the formation of MoS2 and the MoWS2 alloy. Micro-photoluminescence (PL) mapping of the obtained 2L-Mo0.5W0.5S2 film showed an excellent uniformity of light emission on large area with an exciton peak at 1.97 eV, significantly blue-shifted with respect to PL emission of 1L-MoS2 at 1.86 eV. Such highly uniform optical properties make the grown MoWS2 alloy very promising for optoelectronic applications.