WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Article Comparison of the Photoresponse Characteristics for 4H-SiC Schottky Barrier UV Photodetector with Graphene and Ni/Cr Electrode(Elsevier, 2026) Dulcel, Atilla Mert; Gozek, Melike; Unverdi, Ozhan; Celebi, CemGr/4H-SiC and Ni/Cr/4H-SiC Schottky junction UV photodetectors were fabricated and investigated to reveal the effect of electrode materials on the device performance such as spectral response and response speed. I-V characterization, spectral response, and response speed (on-off) measurements were conducted for the UV wavelength range between 200 and 400 nm. The maximum photo-responsivity was obtained as 0.081 A/W for Gr/4H-SiC and 0.041 A/W for Ni/Cr/4H-SiC at a wavelength of 260 nm. This result was attributed to the higher optical transmittance of the graphene electrode compared to the semitransparent Ni/Cr electrode. Zero bias response speed measurements were done under 280 nm wavelength UV light pulsed at different frequencies such as 100 Hz, 500 Hz, and 1000 Hz. The Gr/4H-SiC and Ni/Cr/4H-SiC photodetectors show distinctly different decay times of 5.04 ms and 305.1 mu s, respectively, while their rise times were found to be similar. This observation has been explained by the inclination of graphene to act as a trap site for photogenerated holes.Article Citation - WoS: 9Citation - Scopus: 9High Voltage Response of Graphene/4h-sic Uv Photodetector With Low Level Detection(Elsevier, 2023) Jehad, Ala K.; Ünverdi, Özhan; Çelebi, CemA self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a p-i-n like-structure with high voltage response has been fabricated to detect and measure low intensity ultraviolet (UV) radiation. Bilayer graphene sheet grown by chemical vapor deposition (CVD) method was transferred on the top of an epilayer structure of n-/n+ 4 H-SiC. In this structure, two Schottky contacts were formed: one at G/ n- 4H-SiC interface and the other at bulk-4 H-SiC/Cr/Au interface. The photodetector's characteristic measurements revealed low dark current of - 0.58 nA and spectral voltage responsivity of - 0.75 V/W at 300 nm wavelength. Under low level UV illumination of 300 nm wavelength, the photodetector exhibited a leakage current and a photogenerated response voltage of 1.1 nA and 10 mV, respectively. The time-dependent photovoltage measurements displayed a rapid photovoltage response with rise and decay times of -74 ns and - 580 ns, respectively. This novel device holds promise for applications requiring sensitive and self-powered UV detection.Article Citation - WoS: 35Citation - Scopus: 35Cvd Graphene/Sic Uv Photodetector With Enhanced Spectral Responsivity and Response Speed(Elsevier, 2023) Jehad, Ala K.; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, CemA self-powered, high-performance graphene/Silicon Carbide (G/4H-SiC) ultraviolet Schottky junction photodetector has been fabricated, and the effect of using monolayer and bilayer graphene on the device performance parameters was investigated. P-type graphene sheets were grown by the chemical vapor deposition (CVD) method, while 4H-SiC material consists of an epilayer structure of n-/n+ on bulk n-SiC. Two photodetector devices have been studied, one with monolayer graphene (MLG) and the other with bilayer graphene (BLG). The proposed photodetector structure reveals the highest spectral responsivity known of a G/4H-SiC UV photodetector so far. Electronic and optoelectronic characterizations were done under an ultraviolet wavelength range from 240 to 350 nm. The results show two spectral responsivity maxima (Rmax) at 285 nm and 300 nm wavelengths. Exhibiting two maxima in spectral responsivity and detectivity is caused by the constructive and destructive interference effects of multiple reflections at the SiC epilayer's interfaces. The photodetector devices exhibit high spectral responsivity (R ? 0.09 AW?1), maximum detectivity (D* ? 2.9 × 1012 Jones), and minimum noise equivalent power (NEP ? 0.17 pWHz-1/2) in both devices. Using bilayer graphene instead of monolayer showed no significant change in both the photogenerated current and the spectral responsivity due to the higher absorption coefficient of bilayer graphene, however, it exhibited a significant improvement in the response speed. The response speed was found to increase by 50 % when bilayer graphene was used as a hole collecting electrode in the G/4H-SiC junction. This is because bilayer graphene creates a narrower depletion layer and higher electric field, which promotes efficient charge separation and recombination. © 2023 Elsevier B.V.Article Citation - WoS: 7Citation - Scopus: 7Insights Into Sustainability of Engineered Carbonaceous Material-Based Technologies for Advanced Cyanide Removal From Wastewater(Elsevier, 2023) Yoon, Yeojoon; Khataee, Alireza; Gören, Ayşegül Yağmur; Recepoğlu, Yaşar KemalCyanide (CN) is a serious concern in industrial and goldmine wastewater. Strict regula-tory standards have been established by various agencies due to the detrimental effects that CN has on human health. Therefore, before discharge to water bodies or land, it is essential to create a sus-tainable model for the safe removal of CN. Carbon-based materials are well known for their adsorption and oxidation features, which can be conducive to CN removal. This paper reviews the relevant literature on the application of modified and unmodified carbon-based materials to CN removal in water; these materials include activated carbon (AC), graphene, graphene oxide (GO), and carbon nanotubes (CNTs). Moreover, CN removal mechanisms and photocatalytic removal of CN are comprehensively discussed, with a particular emphasis on modifying carbon-based materials. It has been observed that adding various elements to carbon-based materials improves their surface area, functional groups, CN adsorption capacity, and pore volume. Impacts of operational parameters, isotherm models, kinetics, and types of carbon-based materials are also outlined. This study provides insight into the real-scale applicability of carbon-based materials for CN removal from waters. Moreover, this review indicates that essential work on CN removal using carbon-based materials is still needed. Future research should focus on developing modified carbon-based materials to encourage multidisciplinary research. The most crucial gap in the literature is that the studies have been performed on a lab scale. Therefore, further pilot and real-scale applica-tions should be conducted. Overall, the cost assessment, environmental effects, and human health risks of carbon-based materials should be studied in future research to achieve a realistic perspective on applicability on an industrial scale.(c) 2023 THE AUTHORS. Published by Elsevier BV on behalf of Faculty of Engineering, Alexandria University This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/ licenses/by-nc-nd/4.0/).Article Citation - WoS: 5Citation - Scopus: 5Self-Powered Photodetector Array Based on Individual Graphene Electrode and Silicon-On Integration(Elsevier, 2023) Yanılmaz, Alper; Ünverdi, Özhan; Çelebi, CemOne of the key limitations for the device performance of the silicon (Si) based photodetector arrays is the optical crosstalk effect encountered between photoactive elements as well. The scope of this work is to reduce optical crosstalk and thus increasing the device performances with graphene and Si integration. This paper presents the design, fabrication process, and performance evaluation of self-powered individual Graphene/Silicon on Insulator (GSOI) based Schottky barrier photodiode array (PDA) devices. A 4-element GSOI Schottky barrier PDA with separate graphene electrodes is fabricated to examine possible optical crosstalk encountered between each diode in the array structure. Here, monolayer graphene is utilized as hole collecting separate electrode on individually arrayed n-type Si on SOI substrate by photolithography technique. Each diode in the array exhibited a clear rectifying Schottky character. Photoresponse characterizations revealed that all diodes had excellent device performance even in self-powered mode in terms of an Ilight/Idark ratio up to 104, a responsivity of ∼0.12 A/W, a specific detectivity of around 1.6 × 1012 Jones, and a response speed of ∼1.32 μs at 660 nm wavelength. As revealed by optical crosstalk measurement, the device with pixel pitch of 1.5 mm had a total crosstalk of about 0.10% (−60 dB) per array. These results showed that the optical crosstalk between neighboring n-Si elements can be greatly minimized when graphene is used as separated electrode on arrayed Si on SOI substrate. Our study is expected give an insight into the performance characteristics of GSOI PDA devices which have great potential to be used in many technological applications such as multi-wavelength light measurement, level metering, high-speed photometry and position/motion detection. © 2023 Elsevier B.V.Article Citation - WoS: 3Citation - Scopus: 3Stable Single Layer Structures of Aluminum Oxide: Vibrational and Electronic Characterization of Magnetic Phases(Elsevier, 2022) Özyurt, A. Kutay; Molavali, Deniz; Şahin, HasanThe structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal that aluminum oxide forms a distorted octahedral structure (1T′-AlO2) in its single layer limit. It is also shown that surfaces of 1T′-AlO2 display magnetic behavior originating from the O atoms. While the ferromagnetic (FM) state is the most favorable magnetic order for 1T′-AlO2, transformation to a dynamically stable antiferromagnetic (AFM) state upon a slight distortion in the crystal structure is also possible. It is also shown that Raman activities (350–400 cm−1) obtained from the vibrational spectrum can be utilized to distinguish the possible magnetic phases of the crystal structure. Electronically, both FM and the AFM phases are semiconductors with an indirect band gap and they can form a type-III vdW heterojunction with graphene-like ultra-thin materials. Moreover, it is predicted that presence of oxygen defects that inevitably occur during synthesis and production do not alter the magnetic state, even at high vacancy density. Apparently, ultra-thin 1T′-AlO2 with its stable crystal structure, semiconducting nature and robust magnetic state is a quite promising material for nanoscale device applications.Article Citation - WoS: 13Citation - Scopus: 12Comparison of Photocatalytic Performances of Solar-Driven Hybrid Catalysts for Hydrogen Energy Evolution From 1,8–diazabicyclo[5.4.0]undec-7 (dbu) Solution(Elsevier, 2022) Orak, Ceren; Yüksel, AslıHydrogen is evolved from 1,8–Diazabicyclo [5.4.0]undec-7-ene (DBU) model solution which is a nitrogen-containing heterocyclic organic compound using different solar-driven hybrid photocatalysts. A characterization study is performed and the results of PL analysis show that the most promising solar-driven hybrid catalyst is graphene supported LaFeO3. Then, an experimental design matrix is built using the Box Behnken model to main and interaction effects of reaction parameters (pH, catalyst loading, and [H2O2]0). Based on the experimental results relatively higher hydrogen amounts are achieved using GLFO and this finding is supported by PL analysis. The highest hydrogen amount and DBU removal are determined as 3058.31 μmol/gcat and 90.3%, respectively. Statistical analysis shows that the square of catalyst loading is the only effective parameter over the produced hydrogen amount from the DBU model solution using GLFO and the R2 of model is 92.47%. Thus, hydrogen production and wastewater treatment could be achieved via photocatalytic oxidation as concomitant.Article Citation - WoS: 1Citation - Scopus: 1Substrate Effects on Electrical Parameters of Dirac Fermions in Graphene(Elsevier, 2021) Tıraş, Engin; Ardalı, Şükrü; Fırat, Hakan Asaf; Arslan, Engin; Özbay, EkmelThe substrate effects on the electronic transport properties of single-layer graphene on TiO2/Si substrate have been studied. The Hall mobility, sheet carrier density, and transport lifetime were obtained from the temperature-dependent Hall measurements, while the in-plane effective mass, quantum lifetime was obtained from the temperature-dependent variation of the Shubnikov de Haas (SdH) oscillations that were made at 1.8 to 45 K temperature range and up to the magnetic field of 11 T. The measurement results showed that in SLG/TiO2/ Si sample, there were 2.36 +/- 0.12x1016 m-3 amounts of 3D carriers coming from the substrate. In our previous studies, 3D carrier densities were measured as 6.07x1016 m-3 and zero for SLG/SiO2/Si and SLG/SiC sample, respectively. This result shows that the 3D carriers formed in the structure are significantly changed by a substrate. The scattering mechanisms were determined using the zt/zq ratio. The ratio values obtained as 3.66. This value obtained was compared with the values we found for SLG/SiC (zt/zq=1.36) sample and SLG/TiO2/Si (zt/zq=3.08) sample our previous study. The results show that small-angle scattering is dominant in SLG/SiC sample, but large-angle scattering is dominant in SLG/SiO2/Si and SLG/TiO2/Si samples. The charged impurity scattering is the dominant scattering mechanism in SLG/TiO2/Si and SLG/SiO2/Si samples, whereas in SLG/SiC samples, a short-range scattering mechanism such as lattice defects can be said to affect the electronic transport.Article Citation - WoS: 12Citation - Scopus: 17Junction Area Dependent Performance of Graphene/Silicon Based Self-Powered Schottky Photodiodes(Elsevier, 2021) Fidan, Mehmet; Ünverdi, Özhan; Çelebi, CemThis work reports the impact of junction area on the device performance parameters of Graphene/n-Silicon (Gr/n-Si) based Schottky photodiodes. Herein, three batches of Gr/n-Si photodiode samples were produced based on various sized CVD grown monolayer graphene layers transferred on individual n-Si substrates. The fabricated devices exhibited strong Schottky diode character and had high spectral sensi-tivity at 905 nm peak wavelength. The optoelectronic measurements showed that the spectral response of Gr/n-Si Schottky photodiodes has a linear dependence on the active junction area. The sample with 20 mm(2) junction area reached a spectral response of 0.76 AW(-1), which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples were found to be lowered as a function of the junction area. The experimental results demonstrated that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of the graphene electrode on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface. This study may serve towards the standardization of junction area for the development of high performance Gr/Si based optoelectronic devices such as solar cells and photodetectors operating in between the ultraviolet and near-infrared spectral region. (C) 2021 Elsevier B.V. All rights reserved.Article Citation - WoS: 5Citation - Scopus: 6Contribution of O-2 Plasma Treatment and Amine Modified Gos on Film Properties of Conductive Pedot:pss: Application in Indium Tin Oxide Free Solution Processed Blue Oled(Elsevier, 2019) Diker, Halide; Yeşil, Fatih; Varlıklı, CananPrimary (n-propyl amine, n-PRYLA), secondary (dipropyl amine, DPRYLA) and alcohol (propanol amine, PRPOHA) amine derivatives were used as amine sources in graphene oxide (GO) modification and obtained samples were named as nPRYLA-GO, DPRYLA-GO and PRPOHA-GO, respectively. Modified graphene oxide (mGO) derivatives were doped in poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PH1000) and O-2 plasma treatment (70W, 3 min) was applied on the spin casted films. PH1000:mGO films presented high optical transparency values (> 90%) and low resistivity (177-183 Q/sq). The roughness values were increased especially when the hydrophobic alkyl chain containing DPRYLA-GO and nPRYLA-GO were doped in PH1000. Prepared films were utilized as anode in solution processed blue organic light emitting diode. PH1000:PRPOHA-GO anode presented more than 30 nm of decrement in full with at half maximum and 1.6, 1.5 and 1.9 fold enhancements in current, power and external quantum efficiency values, compared to those of ITO anode, respectively.