WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Permanent URI for this collectionhttps://hdl.handle.net/11147/7150
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Article Comparison of the Photoresponse Characteristics for 4H-SiC Schottky Barrier UV Photodetector with Graphene and Ni/Cr Electrode(Elsevier, 2026) Dulcel, Atilla Mert; Gozek, Melike; Unverdi, Ozhan; Celebi, CemGr/4H-SiC and Ni/Cr/4H-SiC Schottky junction UV photodetectors were fabricated and investigated to reveal the effect of electrode materials on the device performance such as spectral response and response speed. I-V characterization, spectral response, and response speed (on-off) measurements were conducted for the UV wavelength range between 200 and 400 nm. The maximum photo-responsivity was obtained as 0.081 A/W for Gr/4H-SiC and 0.041 A/W for Ni/Cr/4H-SiC at a wavelength of 260 nm. This result was attributed to the higher optical transmittance of the graphene electrode compared to the semitransparent Ni/Cr electrode. Zero bias response speed measurements were done under 280 nm wavelength UV light pulsed at different frequencies such as 100 Hz, 500 Hz, and 1000 Hz. The Gr/4H-SiC and Ni/Cr/4H-SiC photodetectors show distinctly different decay times of 5.04 ms and 305.1 mu s, respectively, while their rise times were found to be similar. This observation has been explained by the inclination of graphene to act as a trap site for photogenerated holes.Article Citation - WoS: 149Citation - Scopus: 149Hexagonal Aln: Dimensional-Crossover Band-Gap Transition(American Physical Society, 2015) Bacaksız, Cihan; Şahin, Hasan; Özaydın, H. Duygu; Horzum, Şeyda; Senger, Ramazan Tugrul; Peeters, François M.Motivated by a recent experiment that reported the successful synthesis of hexagonal (h) AlN [Tsipas, Appl. Phys. Lett. 103, 251605 (2013)APPLAB0003-695110.1063/1.4851239], we investigate structural, electronic, and vibrational properties of bulk, bilayer, and monolayer structures of h-AlN by using first-principles calculations. We show that the hexagonal phase of the bulk h-AlN is a stable direct-band-gap semiconductor. The calculated phonon spectrum displays a rigid-layer shear mode at 274 cm-1 and an Eg mode at 703 cm-1, which are observable by Raman measurements. In addition, single-layer h-AlN is an indirect-band-gap semiconductor with a nonmagnetic ground state. For the bilayer structure, AA′-type stacking is found to be the most favorable one, and interlayer interaction is strong. While N-layered h-AlN is an indirect-band-gap semiconductor for N=1-9, we predict that thicker structures (N≥10) have a direct band gap at the Γ point. The number-of-layer-dependent band-gap transitions in h-AlN is interesting in that it is significantly different from the indirect-to-direct crossover obtained in the transition-metal dichalcogenides.Article Citation - WoS: 10Citation - Scopus: 10Spin-Spin Correlations of Magnetic Adatoms on Graphene(American Physical Society, 2015) Güçlü, Alev Devrim; Bulut, NejatWe study the interaction between two magnetic adatom impurities in graphene using the Anderson model. The two-impurity Anderson Hamiltonian is solved numerically by using the quantum Monte Carlo technique. We find that the interimpurity spin susceptibility is strongly enhanced at low temperatures, significantly diverging from the well-known Ruderman-Kittel-Kasuya-Yoshida result which decays as R-3.Article Citation - WoS: 35Citation - Scopus: 33Portlandite Crystal: Bulk, Bilayer, and Monolayer Structures(American Physical Society, 2015) Aierken, Y.; Şahin, Hasan; İyikanat, Fadıl; Horzum, Şeyda; Süslü, A.; Chen, B.; Senger, Ramazan Tugrul; Tongay, S.; Peeters, François M.Ca(OH)2 crystals, well known as portlandite, are grown in layered form, and we found that they can be exfoliated on different substrates. We performed first principles calculations to investigate the structural, electronic, vibrational, and mechanical properties of bulk, bilayer, and monolayer structures of this material. Different from other lamellar structures such as graphite and transition-metal dichalcogenides, intralayer bonding in Ca(OH)2 is mainly ionic, while the interlayer interaction remains a weak dispersion-type force. Unlike well-known transition-metal dichalcogenides that exhibit an indirect-to-direct band gap crossover when going from bulk to a single layer, Ca(OH)2 is a direct band gap semiconductor independent of the number layers. The in-plane Young's modulus and the in-plane shear modulus of monolayer Ca(OH)2 are predicted to be quite low while the in-plane Poisson ratio is larger in comparison to those in the monolayer of ionic crystal BN. We measured the Raman spectrum of bulk Ca(OH)2 and identified the high-frequency OH stretching mode A1g at 3620cm-1. In this study, bilayer and monolayer portlandite [Ca(OH)2] are predicted to be stable and their characteristics are analyzed in detail. Our results can guide further research on ultrathin hydroxites.Article Citation - WoS: 58Citation - Scopus: 60Layer- and Strain-Dependent Optoelectronic Properties of Hexagonal Aln(American Physical Society, 2015) Keçik, Deniz; Bacaksız, Cihan; Senger, Ramazan Tuğrul; Durgun, EnginMotivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a wide-gap semiconductor, which makes it interesting especially for usage in optoelectronic applications. The optical spectra of 1-, 2-, 3-, and 4-layered h-AlN indicate that the prominent absorption takes place outside the visible-light regime. Within the ultraviolet range, absorption intensities increase with the number of layers, approaching the bulk case. On the other hand, the applied tensile strain gradually redshifts the optical spectra. The many-body effects lead to a blueshift of the optical spectra, while exciton binding is also observed for 2D h-AlN. The possibility of tuning the optoelectronic properties via thickness and/or strain opens doors to novel technological applications of this promising material.Article Citation - WoS: 58Citation - Scopus: 60Microscopic Theory of the Optical Properties of Colloidal Graphene Quantum Dots(American Physical Society, 2014) Özfidan, Işıl; Korkusinski, Marek; Güçlü, Alev Devrim; Mcguire, John A.; Hawrylak, PawelWe present a microscopic theory of electronic and optical properties of colloidal graphene quantum dots (CGQDs). The single-particle properties are described in the tight-binding model based on the pz carbon orbitals. Electron-electron screened Coulomb direct, exchange, and scattering matrix elements are calculated using Slater pz orbitals. The many-body ground state and excited states are constructed as a linear combination of a finite number of excitations from the Hartree-Fock (HF) ground state (GS) by exact diagonalization techniques. HF ground states corresponding to semiconductor, Mott-insulator, and spin-polarized phases are obtained as a function of the strength of the screened interaction versus the tunneling matrix element. In the semiconducting phase of a triangular CGQD, the top of the valence band and the bottom of the conduction band are found to be degenerate due to rotational symmetry. The singlet and triplet exciton spectra from the HF GS are obtained by solving the Bethe-Salpeter equation. The low-energy exciton spectrum is predicted to consist of two bright-singlet exciton states corresponding to two circular polarizations of light and a lower-energy band of two dark singlets and 12 dark triplets. The robustness of the bright degenerate singlet pair against correlations in the many-body state is demonstrated as well as the breaking of the degeneracy by the lowering of symmetry of the CGQD. The band-gap renormalization, electron-hole attraction, fine structure, oscillator strength, and polarization of the exciton are analyzed as a function of the size, shape, screening, and symmetry of the CGQD. The theoretical results are compared with experimental absorption spectra.Article Citation - WoS: 26Citation - Scopus: 27Electron-Electron Interactions and Topology in the Electronic Properties of Gated Graphene Nanoribbon Rings in Möbius and Cylindrical Configurations(American Physical Society, 2013) Güçlü, Alev Devrim; Grabowski, Marek; Hawrylak, PawelWe present a theory of the electronic properties of gated graphene nanoribbon rings with zigzag edges in Möbius and cylindrical configurations. The finite width opens a gap and nontrivial topology of the Möbius ring leads to a single edge with edge states with an induced, effective gauge field, in analogy to topological insulators. The single zigzag edge leads to a shell of degenerate states at the Fermi level and a ferromagnetic (FM) ground state at half-filling, i.e., at charge neutrality, due to electron-electron interactions. For fractional fillings, both the magnetic moment and the energy gap are found to oscillate as a function of the shell filling. In cylindrical rings, the two edges lead to AF ground state at half-filling but FM ground state at fractional fillings.