WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Permanent URI for this collectionhttps://hdl.handle.net/11147/7150

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Subject: search.filters.subject.GrapheneWoS Q: search.filters.wosQuartile.Q2

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Now showing 1 - 10 of 23
  • Article
    Passive Matrix Schottky Barrier 2d Photodiode Array on Graphene/Soi Platform
    (Springer Science and Business Media Deutschland GmbH, 2025) Yanilmaz, A.; Ünverdi, Ö.; Çelebi, C.
    We fabricated 4 × 4 pixel two-dimensional (2D) photodiode array (PDA) out of monolayer graphene and n-type silicon (n-Si) electrodes on a silicon-on-insulator (SOI) substrate. Our device design is based on passive matrix sensor array architecture consisting of individual graphene and silicon electrodes aligned perpendicular to each other. I-V measurements conducted at room temperature to reveal the electronic characteristics of graphene and Si junction in the device structure. The spectral responsivity, respond speed and the optical crosstalk of each G/Si pixels in the array have been determined by wavelength resolved and time dependent photocurrent spectroscopy measurements. Micro-Raman mapping measurements were conducted to examine the surface coverage of graphene electrode on each pixel. The results of Micro-Raman mapping measurements were correlated with the corresponding photocurrent data acquired under light illumination. We believe that this work constitutes a significant potential in integrating variety of 2D materials and SOI technology into next generation image sensing and multiple pixel light detection applications. © The Author(s) 2025.
  • Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Stable Single Layer Structures of Aluminum Oxide: Vibrational and Electronic Characterization of Magnetic Phases
    (Elsevier, 2022) Özyurt, A. Kutay; Molavali, Deniz; Şahin, Hasan
    The structural, magnetic, vibrational and electronic properties of single layer aluminum oxide (AlO2) are investigated by performing state-of-the-art first-principles calculations. Total energy optimization and phonon calculations reveal that aluminum oxide forms a distorted octahedral structure (1T′-AlO2) in its single layer limit. It is also shown that surfaces of 1T′-AlO2 display magnetic behavior originating from the O atoms. While the ferromagnetic (FM) state is the most favorable magnetic order for 1T′-AlO2, transformation to a dynamically stable antiferromagnetic (AFM) state upon a slight distortion in the crystal structure is also possible. It is also shown that Raman activities (350–400 cm−1) obtained from the vibrational spectrum can be utilized to distinguish the possible magnetic phases of the crystal structure. Electronically, both FM and the AFM phases are semiconductors with an indirect band gap and they can form a type-III vdW heterojunction with graphene-like ultra-thin materials. Moreover, it is predicted that presence of oxygen defects that inevitably occur during synthesis and production do not alter the magnetic state, even at high vacancy density. Apparently, ultra-thin 1T′-AlO2 with its stable crystal structure, semiconducting nature and robust magnetic state is a quite promising material for nanoscale device applications.
  • Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Graphene/Soi-based Self-Powered Schottky Barrier Photodiode Array
    (American Institute of Physics, 2022) Yanılmaz, Alper; Fidan, Mehmet; Ünverdi, Özhan; Çelebi, Cem
    We have fabricated a four-element graphene/silicon on insulator (SOI) based Schottky barrier photodiode array (PDA) and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as a common electrode on a lithographically defined linear array of n-type Si channels on a SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity of around 0.1 A/W under a self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device with ∼1.36 and ∼1.27 μs rise time and fall time, respectively. Each element in the array displayed an average specific detectivity of around 1.3 × 1012 Jones and a substantially small noise equivalent power of ∼0.14 pW/Hz-1/2. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, and position/motion detection.
  • Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Substrate Effects on Electrical Parameters of Dirac Fermions in Graphene
    (Elsevier, 2021) Tıraş, Engin; Ardalı, Şükrü; Fırat, Hakan Asaf; Arslan, Engin; Özbay, Ekmel
    The substrate effects on the electronic transport properties of single-layer graphene on TiO2/Si substrate have been studied. The Hall mobility, sheet carrier density, and transport lifetime were obtained from the temperature-dependent Hall measurements, while the in-plane effective mass, quantum lifetime was obtained from the temperature-dependent variation of the Shubnikov de Haas (SdH) oscillations that were made at 1.8 to 45 K temperature range and up to the magnetic field of 11 T. The measurement results showed that in SLG/TiO2/ Si sample, there were 2.36 +/- 0.12x1016 m-3 amounts of 3D carriers coming from the substrate. In our previous studies, 3D carrier densities were measured as 6.07x1016 m-3 and zero for SLG/SiO2/Si and SLG/SiC sample, respectively. This result shows that the 3D carriers formed in the structure are significantly changed by a substrate. The scattering mechanisms were determined using the zt/zq ratio. The ratio values obtained as 3.66. This value obtained was compared with the values we found for SLG/SiC (zt/zq=1.36) sample and SLG/TiO2/Si (zt/zq=3.08) sample our previous study. The results show that small-angle scattering is dominant in SLG/SiC sample, but large-angle scattering is dominant in SLG/SiO2/Si and SLG/TiO2/Si samples. The charged impurity scattering is the dominant scattering mechanism in SLG/TiO2/Si and SLG/SiO2/Si samples, whereas in SLG/SiC samples, a short-range scattering mechanism such as lattice defects can be said to affect the electronic transport.
  • Article
    Citation - WoS: 13
    Citation - Scopus: 15
    Hybrid J-aggregate-graphene phototransistor
    (American Chemical Society, 2020) Yakar, Ozan; Balcı, Osman; Uzlu, Burkay; Polat, Nahit; Arı, Ozan; Tunç, İlknur; Balcı, Sinan
    J-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance band in the visible and near-infrared spectrum, and hence they have found many exciting applications in nonlinear optics, sensing, optical devices, photography, and lasing. In silver halide photography, for example, they have enormously improved the spectral sensitivity of photographic process due to their fast and coherent energy migration ability. On the other hand, graphene, consisting of single layer of carbon atoms forming a hexagonal lattice, has a very low absorption coefficient. Inspired by the fact that J-aggregates have carried the role to sense the incident light in silver halide photography, we would like to use Jaggregates to increase spectral sensitivity of graphene in the visible spectrum. Nevertheless, it has been an outstanding challenge to place isolated J-aggregate films on graphene to extensively study interaction between them. We herein noncovalently fabricate isolated J-aggregate thin films on graphene by using a thin film fabrication technique we termed here membrane casting (MC). MC significantly simplifies thin film formation of water-soluble substances on any surface via porous polymer membrane. Therefore, we reversibly modulate the Dirac point of graphene in the J-aggregate/graphene van der Waals (vdW) heterostructure and demonstrate an all-carbon phototransistor gated by visible light. Owing to the hole transfer from excited excitonic thin film to graphene layer, graphene is hole-doped. In addition, spectral and power responses of the all-carbon phototransistor have been measured by using a tunable laser in the visible spectrum. The first integration of J-aggregates with graphene in a transistor structure enables one to reversibly write and erase charge doping in graphene with visible light that paves the way for using J-aggregate/graphene vdW heterostructures in optoelectronic applications.
  • Article
    Citation - WoS: 6
    Citation - Scopus: 6
    Adsorbate-Induced Enhancement of the Spectral Response in Graphene/Silicon-based Schottky Barrier Photodetectors
    (Springer Verlag, 2020) Sahan, N.; Fidan, Mehmet; Çelebi, Cem
    The impact of atmospheric adsorbates on the spectral response and response speed of p-type graphene/n-type Silicon (p-Gr/n-Si) based Schottky barrier photodetectors are investigated. Wavelength resolved photocurrent and transient photocurrent spectroscopy measurements conducted under high-vacuum conditions revealed that the atmospheric adsorbates such as O-2 and H2O stuck on graphene electrode lead to hole doping in graphene and therefore shift its Fermi level towards higher energy states below its Dirac point. Such a shift in graphene's Fermi level due to adsorbates increases the zero-bias Schottky barrier height of the p-Gr/n-Si heterojunction from 0.71 to 0.78 eV. Adsorbate induced increment in the barrier height promotes the separation of photo-generated charge carriers at the depletion region and leads to an improvement in the maximum spectral response (e.g., from 0.39 to 0.46 AW(-1)) and response speed of the p-Gr/n-Si photodetector in the near-infrared region. The experimentally obtained results are expected to give an insight into the adsorbate related variations in the rectification and photo-response characters of the heterojunctions of graphene and other 2D materials with different semiconductors.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Contribution of O-2 Plasma Treatment and Amine Modified Gos on Film Properties of Conductive Pedot:pss: Application in Indium Tin Oxide Free Solution Processed Blue Oled
    (Elsevier, 2019) Diker, Halide; Yeşil, Fatih; Varlıklı, Canan
    Primary (n-propyl amine, n-PRYLA), secondary (dipropyl amine, DPRYLA) and alcohol (propanol amine, PRPOHA) amine derivatives were used as amine sources in graphene oxide (GO) modification and obtained samples were named as nPRYLA-GO, DPRYLA-GO and PRPOHA-GO, respectively. Modified graphene oxide (mGO) derivatives were doped in poly (3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PH1000) and O-2 plasma treatment (70W, 3 min) was applied on the spin casted films. PH1000:mGO films presented high optical transparency values (> 90%) and low resistivity (177-183 Q/sq). The roughness values were increased especially when the hydrophobic alkyl chain containing DPRYLA-GO and nPRYLA-GO were doped in PH1000. Prepared films were utilized as anode in solution processed blue organic light emitting diode. PH1000:PRPOHA-GO anode presented more than 30 nm of decrement in full with at half maximum and 1.6, 1.5 and 1.9 fold enhancements in current, power and external quantum efficiency values, compared to those of ITO anode, respectively.
  • Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Effects of Random Atomic Disorder on the Magnetic Stability of Graphene Nanoribbons With Zigzag Edges
    (American Physical Society, 2018) Çakmak, Korhan Ertan; Altıntaş, Abdulmenaf; Güçlü, Alev Devrim
    We investigate the effects of randomly distributed atomic defects on the magnetic properties of graphene nanoribbons with zigzag edges using an extended mean-field Hubbard model. For a balanced defect distribution among the sublattices of the honeycomb lattice in the bulk region of the ribbon, the ground-state antiferromagnetism of the edge states remains unaffected. By analyzing the excitation spectrum, we show that while the antiferromagnetic ground state is susceptible to single spin-flip excitations from edge states to magnetic defect states at low defect concentrations, its overall stability is enhanced with respect to the ferromagnetic phase.
  • Article
    Citation - WoS: 134
    Citation - Scopus: 137
    Structural, Vibrational, and Electronic Properties of Single-Layer Hexagonal Crystals of Group Iv and V Elements
    (American Physical Society, 2018) Özdamar, Burak; Özbal, Gözde; Çınar, Mustafa Neşet; Sevim, Koray; Kurt, Gizem; Kaya, Birnur; Sevinçli, Haldun
    Using first-principles density functional theory calculations, we investigate a family of stable two-dimensional crystals with chemical formula A2B2, where A and B belong to groups IV and V, respectively (A=C, Si, Ge, Sn, Pb; B=N, P, As, Sb, Bi). Two structural symmetries of hexagonal lattices P6m2 and P3m1 are shown to be dynamically stable, named as α- and β -phases correspondingly. Both phases have similar cohesive energies, and the α phase is found to be energetically favorable for structures except CP, CAs, CSb, and CBi, for which the β phase is favored. The effects of spin-orbit coupling and Hartree-Fock corrections to exchange correlation are included to elucidate the electronic structures. All structures are semiconductors except CBi and PbN, which have metallic character. SiBi, GeBi, and SnBi have direct band gaps, whereas the remaining semiconductor structures have indirect band gaps. All structures have quartic dispersion in their valence bands, some of which make the valence band maximum and resemble a mexican-hat shape. SnAs and PbAs have purely quartic valence band edges, i.e., E-αk4, a property reported for the first time. The predicted materials are candidates for a variety of applications. Owing to their wide band gaps, CP, SiN, SiP, SiAs, GeN, GeP can find their applications in optoelectronics. The relative band positions qualify a number of the structures as suitable for water splitting, where CN and SiAs are favorable at all pH values. Structures with quartic band edges are expected to be efficient for thermoelectric applications.
  • Article
    Citation - WoS: 28
    Citation - Scopus: 30
    P3HT-graphene bilayer electrode for Schottky junction photodetectors
    (IOP Publishing Ltd., 2018) Aydın, Hasan; Kalkan, Sırrı Batuhan; Varlıklı, Canan; Çelebi, Cem
    We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.