Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Permanent URI for this collectionhttps://hdl.handle.net/11147/4719
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Article Citation - WoS: 7Citation - Scopus: 10Enhanced Light–matter Interaction in a Hybrid Photonic–plasmonic Cavity(Springer, 2021) Gökbulut, Belkıs; İnanç, Arda; Topçu, Gökhan; Özçelik, Serdar; Demir, Mustafa Muammer; İnci, Mehmet NaciStrongly concentrated optical fields around a metal nanoparticle in the close vicinity of a dipole noticeably facilitate dramatic changes in the localized density of states due to hybrid photonic–plasmonic mode couplings as compared to that of the pure cavity mode fields. Significant variations of the field intensity in the presence of the metal nanoparticle elucidate enhanced light–matter interaction in a hybrid structure. The enhancement factor of the light–matter interaction is studied through the single-atom cooperativity parameter, which is directly proportional to the ratio of the fluorescence lifetimes of the off-resonant and on-resonant emission. A compact and cost-effective hybrid device, which includes a microfiber cavity, supporting whispering gallery modes, and a well-defined solid nanostructure, consisting of a gold nanoparticle core, overcoated by a silica shell, and decorated with CdS/CdSe quantum dots, is demonstrated to offer an outstanding potential for the enhancement of light–matter interaction. Surface plasmons of a gold nanoparticle, placed inside a hollow cylindrical nanostructure at the surface of a microfiber, are activated upon excitation of the dipoles of the quantum emitters, which are on-resonance with the whispering gallery mode. Time-resolved experiments demonstrate that the single-atom cooperativity parameter of the quantum dots is enhanced by a factor of about 4.8 in the presence of the gold nanoparticle being simultaneously in strong interaction with the cavity mode field and the metal nanoparticle’s surface plasmons.Correction Correction To: Enhanced Light–matter Interaction in a Hybrid Photonic–plasmonic Cavity(Springer, 2022) Gökbulut, Belkıs; İnanç, Arda; Topçu, Gökhan; Özçelik, Serdar; Demir, Mustafa Muammer; İnci, Mehmet NaciIn this article the statement in the Funding information section was incorrect. The correct Funding information is as follows. ‘Dr Belkıs Gökbulut acknowledges TUBITAK for the financial support provided under Contract Number 120F323’.Conference Object Pre-Study of the Dissolution Behavior of Silicon Kerf Residue in Steel(Springer, 2022) Lazou, Adamantia; Nilssen, David; Gökelma, Mertol; Wallin, Maria; Tranell, GabriellaSilicon kerf residue is generated during the wafering process of pure silicon in the photovoltaic value chain. The generated by-product has a high volume, and the particle size is typically below 1 μm. Although the fine particles are partly oxidized, the material may be beneficial in different metallurgical applications such as grain refining and alloy composition adjustments. This work studies the dissolution behavior of silicon kerf in low alloy steel melts with the aim to upcycle the kerf material in the steel industry for different purposes. In this study, a steel alloy and the kerf residue were melted (at 1580 °C) in an alumina crucible placed in an induction furnace. The amount of added kerf residue was varied. The behavior of the particles in the solidified alloy was characterized by using an optical microscope, electron probe microscope (EPMA), and wavelength-dispersive X-ray spectroscopy (WDS) in order to study the dissolution behavior of the Si-kerf residue in the steel.Article Citation - WoS: 10Citation - Scopus: 11Behavior of Al4c3 Particles During Flotation and Sedimentation in Aluminum Melts(Springer, 2021) Gökelma, Mertol; Storm Aarnaes, Trygve; Maier, Juergen; Renkel, Maria F.; Ekstrom, Kai Erik; Friedrich, Bernd; Tranell, GabriellaAl4C3 particles form during the primary production of aluminum via molten salt electrolysis due to the carbon solubility and direct contact between bath, metal, and carbon anodes. Additional Al4C3 may form during melt processing through direct contact between the melt and carbonaceous materials. As a result of their small size and similar density to aluminum, removal of aluminum carbide particles can be challenging. If not removed, carbides can produce inclusion defects or poor surface condition in aluminum products. The current work studies the removal and behavior of Al4C3 particles during flotation with different gas mixtures, as well as sedimentation. The interaction between carbide particles and Al2O3 films during the melt treatment processes was also studied and reported. Factsage thermochemical software was used to model the interactions at the interface of inclusions and bubbles covered by films. The highest degree of carbide removal was obtained after flotation with an H2O-containing argon gas mixture, where the carbide concentration dropped below the measured solubility limit of carbon at the corresponding temperature. Strong interaction between Al4C3 particles and Al2O3 films was observed during sedimentation which worked as an efficient removal method for the particles. Oxidation of carbides and formation of oxycarbides were suggested as the mechanisms promoting the attachment of carbides on oxide films.Article Citation - WoS: 8Citation - Scopus: 7A Comparative Study on Structural, Morphological and Photocatalytic Properties of Anodically Grown Zno Nanowires Under Varying Parameters(Springer, 2021) Özdemir, Erdem Tevfik; Kartal, Uğur; Dikici, Tuncay; Erol, Mustafa; Yurddaskal, MetinIn this study, zinc oxide (ZnO) nanowires (NWs) were successfully produced on Zn plates through electrochemical anodization in potassium bicarbonate aqueous electrolytes with different production parameters in two groups as applied voltage and anodization time. Subsequently, the ZnO NWs were annealed at 300 degrees C for 1 h in air atmosphere to increase crystallinity and remove organic residues. Structural and morphological properties were determined through X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. The effect of anodization parameters on the structure of ZnO NWs and thus their photocatalytic activities were evaluated in detail by UV spectrophotometer. The results pointed out that, the most effective nanostructure on the photocatalytic degradation of methylene blue was obtained in the sample that was anodized for 30 min under 30 V at room temperature with a degradation efficiency of 90.6% after 11 h. This result shows that the NW-structured ZnO materials are promising to be used as effective photocatalysts in the removal of organic pollutants by solar energy and their conversion to green compounds.Article Citation - WoS: 9Citation - Scopus: 7Epitaxial Characteristics of Mbe-Grown Znte Thin Films on Gaas (211)b Substrates(Springer, 2019) Özçeri, Elif; Tarhan, EnverHighly crystalline ZnTe thin films were grown on GaAs (211)B substrates by molecular beam epitaxy (MBE) for potential applications such as MCT detectors and optoelectronic devices. We investigated the effects of Te to Zn (VI/II) flux ratio on the quality of ZnTe films in terms of crystal orientation, elemental composition, surface roughness, and dislocation density. Atomic concentrations of Zn, Te, and oxygen complexes due to oxygen contamination on the film surfaces were analyzed by X-ray photoelectron spectroscopy. X-ray double crystal rocking curve full width half maximum (FWHM) of ZnTe (422) peak was observed as 233 arcseconds for a 1.66 mu m thick film, which indicates high crystallinity. Wet chemical etching was applied to the films to quantify the crystal quality by calculating etch pit densities (EPD) from scanning electron microscope images. A very low EPD value of 1.7 x 10(7) cm(-2) was measured. Additionally, the root mean square roughness values, obtained from atomic force microscopy topography images were in the range of 10-25 nm. These values were supported by FWHM values of red green blue color intensity histograms obtained from Nomarski Microscope images. The results of our analyses indicate that the VI/II flux ratios of 4 and 4.5 produce the best quality ZnTe films on GaAs (211)B substrates.